US4893509A
Expired / Lapsed
US
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Method and product for fabricating a resonant-bridge microaccelerometer
Assignee: Motors Liquidation Co
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Filing: 1988-12-27
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Granted: 1990-01-16
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Expires: 2008-12-27
Abstract
Abstract A resonant bridge microaccelerometer is formed using patterned Silicon-on-Insulator (SOI) material. A buried layer is formed in the silicon substrate using preferably oxygen ion implanting techniques. A predetermined proof mass is subsequently formed by selective deposition of an appropriate material on an epitaxially grown layer of silicon generally over the buried layer. The buried layer is subsequently removed by a hydrofluoric acid etch, thereby forming a gap generally everywhere therebetween the proof mass and the supporting silicon substrate, and delineating the resonant microbridges within the microaccelerometer.
Inventors
- 👤 Bernard A. MacIver
- 👤 James C. Erskine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:25
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00134; B81C1/00142; G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/097; G01P15/18; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; B81B; B81B2201/00; B81B2201/02; B81B2201/0228; B81B2201/0235; B81B2201/0271; B81B2203/00; B81B2203/03; B81B2203/0315; B81C2201/00; B81C2201/11; B81C2201/117; G01P2015/0805; G01P2015/0822; G01P2015/084; G01P2015/0842
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
103 words
A method for forming an accelerometer comprising the following steps: providing a silicon substrate; forming a buried layer in said silicon substrate; forming a predetermined proof mass of appropriate lateral dimensions on said silicon substrate symmetrically disposed generally over said buried layer; removing silicon from said silicon substrate, so as to delineate a pattern which generally corresponds to said lateral dimensions of said predetermined proof mass and so as to delineate a plurality of microbridges; and removing said buried layer in said silicon substrate so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 2
Independent Claim
103 words
A method for forming an accelerometer comprising the following steps: providing a silicon substrate; forming a buried layer in said silicon substrate; forming a predetermined proof mass of appropriate lateral dimensions on said silicon substrate symmetrically disposed generally over said buried layer; removing silicon from said silicon substrate, so as to delineate a pattern which generally corresponds to said lateral dimensions of said predetermined proof mass and so as to delineate a plurality of microbridges; and removing said buried layer in said silicon substrate so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 3
Dependent Claim
38 words
A method for forming an accelerometer as recited in claim 1 wherein an epitaxially grown silicon layer is formed on said silicon substrate after the formation of said buried layer and before the formations of said proof mass.
Claim 4
Dependent Claim
28 words
A method for forming an accelerometer as recited in claim 1 wherein a silicon dioxide masking layer is used to delineate the lateral dimensions of said proof mass.
Claim 5
Dependent Claim
24 words
A method for forming an accelerometer as recited in claim 1 wherein said predetermined proof mass is formed by the selective deposition of gold.
Claim 6
Dependent Claim
22 words
A method for forming an accelerometer as recited in claim 1 wherein said buried layer is removed by a hydrofluoric acid etch.
Claim 7
Independent Claim
182 words
A method for forming an accelerometer comprising the following steps: providing a silicon substrate; forming a buried layer in said silicon substrate; epitaxially growing a silicon layer from said silicon substrate generally over said buried layer; removing silicon from said epitaxially grown silicon layer, so as to delineate a pattern which generally corresponds to said lateral dimensions of said predetermined proof mass and so as to delineate a plurality of microbridges; forming a layer of silicon dioxide on said epitaxially grown silicon layer and photolithographically delineating said silicon dioxide layer so as to expose at least one region of said epitaxially grown silicon layer; forming a predetermined proof mass of appropriate lateral dimensions on said exposed region of said epitaxially grown silicon layer by depositing an appropriate material in those delineated regions of said silicon dioxide layer, said predetermined proof mass being symmetrically disposed generally over said buried layer; removing said silicon dioxide layer; and removing said buried layer in said silicon substrate so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 8
Independent Claim
182 words
A method for forming an accelerometer comprising the following steps: providing a silicon substrate; forming a buried layer in said silicon substrate; epitaxially growing a silicon layer from said silicon substrate generally over said buried layer; removing silicon from said epitaxially grown silicon layer, so as to delineate a pattern which generally corresponds to said lateral dimensions of said predetermined proof mass and so as to delineate a plurality of microbridges; forming a layer of silicon dioxide on said epitaxially grown silicon layer and photolithographically delineating said silicon dioxide layer so as to expose at least one region of said epitaxially grown silicon layer; forming a predetermined proof mass of appropriate lateral dimensions on said exposed region of said epitaxially grown silicon layer by depositing an appropriate material in those delineated regions of said silicon dioxide layer, said predetermined proof mass being symmetrically disposed generally over said buried layer; removing said silicon dioxide layer; and removing said buried layer in said silicon substrate so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 9
Dependent Claim
21 words
A method for forming an accelerometer as recited in claim 6 wherein said epitaxially grown silicon layer comprises n + silicon.
Claim 10
Dependent Claim
24 words
A method for forming an accelerometer as recited in claim 6 wherein said predetermined proof mass is formed by the selective deposition of gold.
Claim 11
Dependent Claim
22 words
A method for forming an accelerometer as recited in claim 6 wherein said buried layer is removed by a hydrofluoric acid etch.
Claim 12
Dependent Claim
24 words
A method for forming an accelerometer as recited in claim 6 wherein appropriate drive and sense electrodes are formed for each of said bridges.
Claim 13
Independent Claim
191 words
A method for forming an accelerometer comprising the following steps: providing a single crystal silicon substrate; forming a buried layer in said silicon substrate; epitaxially growing a n + silicon layer from said silicon substrate generally over said buried layer; removing silicon from said epitaxially grown silicon layer, so as to delineate a pattern which will generally correspond to the lateral dimensions of a predetermined proof mass and a plurality of microbridges; thermally growing a layer of silicon dioxide on said epitaxially grown silicon layer and photolithographically delineating said silicon dioxide layer so as to expose at least one region of said epitaxially grown silicon layer; forming a predetermined proof mass comprising gold of appropriate lateral dimensions on said exposed regions of said epitaxially grown silicon layer by depositing an appropriate material in those delineated regions of said silicon dioxide layer, said predetermined proof mass being symmetrically disposed generally over said buried layer; removing said silicon dioxide layer; and removing said buried layer in said silicon substrate using a hydrofluoric acid etch so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 14
Independent Claim
191 words
A method for forming an accelerometer comprising the following steps: providing a single crystal silicon substrate; forming a buried layer in said silicon substrate; epitaxially growing a n + silicon layer from said silicon substrate generally over said buried layer; removing silicon from said epitaxially grown silicon layer, so as to delineate a pattern which will generally correspond to the lateral dimensions of a predetermined proof mass and a plurality of microbridges; thermally growing a layer of silicon dioxide on said epitaxially grown silicon layer and photolithographically delineating said silicon dioxide layer so as to expose at least one region of said epitaxially grown silicon layer; forming a predetermined proof mass comprising gold of appropriate lateral dimensions on said exposed regions of said epitaxially grown silicon layer by depositing an appropriate material in those delineated regions of said silicon dioxide layer, said predetermined proof mass being symmetrically disposed generally over said buried layer; removing said silicon dioxide layer; and removing said buried layer in said silicon substrate using a hydrofluoric acid etch so as to form a cavity generally everywhere therebetween said proof mass and said microbridges, and said silicon substrate.
Claim 15
Dependent Claim
25 words
A method for forming an accelerometer as recited in claim 11 wherein appropriate drive and sense electrodes are formed corresponding to each of said bridges.
Claim 16
Dependent Claim
71 words
A microaccelerometer formed in accordance with claim 1 comprising: a mass; a substrate surrounding said mass with a cavity provided generally everywhere therebetween said substrate and said mass; and at least two bridges attached at one end to said substrate from which said mass is suspended, said bridges being attached to opposite sides of said mass such that the longitudinal axis through said bridges form a common axis through said mass.
Claim 17
Dependent Claim
20 words
A microaccelerometer formed in accordance with claim 13 further comprising drive and sense electrodes corresponding to each of said bridges.
References Cited (Backward Citations)
US4783237A
Cited
US4732647A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-15 | 1993-07-17 | 1994-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-15 | 1997-07-17 | 1998-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-15 | 2001-07-17 | 2002-01-16 | $7700.00 | Window Closed / Lapsed |