Patent US5605846A successfully refreshed from Google Patents.
US5605846A
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Method for manufacturing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-02-21
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Granted: 1997-02-25
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Expires: 2015-02-21
Abstract
Abstract A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.
Inventors
- 👤 Hisahi Ohtani
- 👤 Akiharu Miyanaga
- 👤 Hongyong Zhang
- 👤 Naoaki Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; Y; Y10; Y10S; Y10S148/00; Y10S148/016
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
100 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: forming a base insulating film on said substrate; forming a semiconductor film comprising silicon on said base insulating film in direct contact therewith; disposing a catalyst capable of promoting a crystallization of an amorphous silicon on at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization in the range of 20 to 90%; and then irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 2
Independent Claim
100 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: forming a base insulating film on said substrate; forming a semiconductor film comprising silicon on said base insulating film in direct contact therewith; disposing a catalyst capable of promoting a crystallization of an amorphous silicon on at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization in the range of 20 to 90%; and then irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said light is emitted from a laser or a flash lamp.
Claim 4
Dependent Claim
35 words
The method of claim 1 wherein said catalyst comprises an element or a compound thereof, said element selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorus, arsenic, and antimony.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said catalyst comprises an element or a compound thereof, said element selected from the Group VIII, IIIb, IVb, and Vb of the periodic table.
Claim 6
Dependent Claim
44 words
The method of claim 1 wherein said catalyst is introduced into said semiconductor film by a method comprising: preparing a solution in which said catalyst is dissolved or dispersed in a polar solvent; and disposing said liquid substantially in contact with said semiconductor film.
Claim 7
Dependent Claim
25 words
The method of claim 5 wherein said polar solvent is at least one selected from a group consisting of water, alcohol, acid, and ammonia water.
Claim 8
Dependent Claim
12 words
The method of claim 5 wherein said catalyst comprises a nickel compound.
Claim 9
Dependent Claim
46 words
The method of claim 7 wherein said nickel compound is at least one selected from a group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetylacetonate, nickel 4-cyclohexylbutyrate, nickel oxide, and nickel hydroxide.
Claim 10
Dependent Claim
13 words
The method of claim 1 wherein said base insulating film comprises silicon nitride.
Claim 11
Dependent Claim
33 words
The method of claim 1 wherein said degree of cyrstallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
Claim 12
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an insulating surface; forming an amorphous semiconductor film comprising silicon on said insulating surface; preparing a solution containing a catalyst therein which is capable of promoting a crystallization of said semiconductor film; applying said solution on at least a portion of said semiconductor film; forming a cover film on said semiconductor film after applying said solution on the semiconductor film; then applying a heat energy to said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization in the range of 20 to 90%, and irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 13
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an insulating surface; forming an amorphous semiconductor film comprising silicon on said insulating surface; preparing a solution containing a catalyst therein which is capable of promoting a crystallization of said semiconductor film; applying said solution on at least a portion of said semiconductor film; forming a cover film on said semiconductor film after applying said solution on the semiconductor film; then applying a heat energy to said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization in the range of 20 to 90%, and irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 14
Dependent Claim
15 words
The method of claim 11 wherein said catalyst comprises a metal or a metal compound.
Claim 15
Dependent Claim
12 words
The method of claim 11 wherein said cover film comprises silicon nitride.
Claim 16
Dependent Claim
33 words
The method of claim 11 wherein said degree of crystallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
Claim 17
Independent Claim
111 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: preparing said substrate having an insulating surface; forming a base film comprising silicon nitride on said insulating surface; preparing a solution containing a catalyst capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on said base film; and disposing said solution in contact with at least a portion of said semiconductor film; heating said semiconductor film in order to crystalize said semiconductor film to a degree of crystallization in the range of 20 to 90%; and irradiating said semiconductor film with light after said heating in order to further crystallize said semiconductor film.
Claim 18
Independent Claim
111 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: preparing said substrate having an insulating surface; forming a base film comprising silicon nitride on said insulating surface; preparing a solution containing a catalyst capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on said base film; and disposing said solution in contact with at least a portion of said semiconductor film; heating said semiconductor film in order to crystalize said semiconductor film to a degree of crystallization in the range of 20 to 90%; and irradiating said semiconductor film with light after said heating in order to further crystallize said semiconductor film.
Claim 19
Dependent Claim
15 words
The method of claim 15 wherein said catalyst comprises a metal or a metal compound.
Claim 20
Dependent Claim
18 words
The method of claim 15 wherein a catalyst layer is formed by applying said solution containing said catalyst.
Claim 21
Dependent Claim
33 words
The method of claim 15 wherein said degree of crystallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
Claim 22
Independent Claim
97 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: forming a base insulating film on said substrate; forming a semiconductor film comprising silicon on said base insulating film in direct contact therewith; disposing a catalyst capable of promoting a crystallization of an amorphous silicon on at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less; and then irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 23
Independent Claim
97 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: forming a base insulating film on said substrate; forming a semiconductor film comprising silicon on said base insulating film in direct contact therewith; disposing a catalyst capable of promoting a crystallization of an amorphous silicon on at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less; and then irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 24
Dependent Claim
13 words
The method of claim 19 wherein said base insulating film comprises silicon nitride.
Claim 25
Dependent Claim
33 words
The method of claim 19 wherein said degree of crystallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
Claim 26
Independent Claim
118 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an insulating surface; forming an amorphous semiconductor film comprising silicon on said insulating surface; preparing a solution containing a catalyst therein which is capable of promoting a crystallization of said semiconductor film; applying said solution on at least a portion of said semiconductor film; forming a cover film on said semiconductor film after applying said solution on the semiconductor film; then applying a heat energy to said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less, and irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 27
Independent Claim
118 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a substrate having an insulating surface; forming an amorphous semiconductor film comprising silicon on said insulating surface; preparing a solution containing a catalyst therein which is capable of promoting a crystallization of said semiconductor film; applying said solution on at least a portion of said semiconductor film; forming a cover film on said semiconductor film after applying said solution on the semiconductor film; then applying a heat energy to said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less, and irradiating said semiconductor film with light in order to further improve the crystallinity of said semiconductor film.
Claim 28
Dependent Claim
12 words
The method of claim 22 wherein said cover film comprises silicon nitride.
Claim 29
Dependent Claim
33 words
The method of claim 22 wherein said degree of crystallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
Claim 30
Independent Claim
107 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: preparing said substrate having an insulating surface; forming a base film comprising silicon nitride on said insulating surface; preparing a solution containing catalyst capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on said base film; and disposing said solution in contact with at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less; and irradiating said semiconductor film with light after said heating in order to further crystallize said semiconductor film.
Claim 31
Independent Claim
107 words
A method of manufacturing a semiconductor device over a substrate comprising the steps of: preparing said substrate having an insulating surface; forming a base film comprising silicon nitride on said insulating surface; preparing a solution containing catalyst capable of promoting a crystallization of silicon; forming a semiconductor film comprising silicon on said base film; and disposing said solution in contact with at least a portion of said semiconductor film; heating said semiconductor film in order to crystallize said semiconductor film to a degree of crystallization of 97% or less; and irradiating said semiconductor film with light after said heating in order to further crystallize said semiconductor film.
Claim 32
Dependent Claim
33 words
The method of claim 25 wherein said degree of crystallization is a proportion of area of a part crystallized of said semiconductor film with respect to an entire area of said semiconductor film.
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