US3791883A
Expired / Lapsed
US
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Semiconductor element having surface coating and method of making the same
Assignee: Hitachi Ltd
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Filing: 1969-07-15
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Granted: 1974-02-12
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Expires: 1989-07-15
Abstract
Abstract A semiconductor element having a surface coating consisting of, for example, a silicon nitride film and a silicon oxide film covering different surface portions of a semiconductor substrate of, for example, silicon so that such surface coating can be utilized for selective diffusion of impurities such as gallium and antimony. In a semiconductor device thus formed, the surface coating acts as a satisfactory surface protective film against external atmosphere, and the backward characteristics of the PN junction can be improved because the end edge of the PN junction terminating at the substrate surface is covered with the silicon nitride film.
Inventors
- 👤 S Nishida
- 👤 I Takei
- 👤 K Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/694; H10P14/6943; H10P14/69433; H10P76/00; H10P76/40; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/43; H10P14/6316; H10P14/6324; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
33 words
A method of making a semiconductor device according to claim 1, further comprising the steps of forming a metal electrode on said semiconductor substrate surface through said hole in said first surface coating.
Claim 2
Dependent Claim
111 words
A method of making a semiconductor device according to claim 1, further comprising the step of causing an impurity to diffuse into said substrate through said hole in said first surface coating for thereby forming a diffused region beneath said first surface coating, forming a third surface coating extending from said first surface coating in a manner to cover the surface of said diffused region, said third surface coating consisting essentially of silicon oxide, removing a portion of said third surface coating for thereby forming in said third surface coating a second hole extending to said diffused region, and providing a metal electrode on said diffused region through said second hole.
Claim 3
Independent Claim
35 words
A method of making a semiconductor device comprising the steps of selectively covering a surface of a semiconductor substrate with a surface coating including a silicon nitride film, and then diffusing gallium into said substrate.
Claim 4
Independent Claim
96 words
A method of making a semiconductor device comprising the steps of forming a first surface coating consisting essentially of silicon oxide and a second surface coating including a silicon nitride film on different surface portions, respectively, of a semiconductor substrate, diffusing gallium into said semiconductor substrate for thereby forming a gallium diffusion layer in that portion of said substrate which lies beneath said first surface coating, and removing a portion of said first surface coating above said gallium diffusion layer for thereby forming in said first surface coating a hole extending to said gallium diffusion layer.
Claim 5
Dependent Claim
117 words
A method of making a semiconductor device according to claim 5, further comprising the steps of diffusing an impurity into the substrate through the hole in said first surface coating for thereby forming a second diffusion layer in said gallium diffusion layer, forming a third surface coating consisting essentially of silicon oxide extending from said first surface coating in a manner to cover said second diffusion layer, forming a second and a third holes in said first surface coating on said gallium diffusion layer and in said third surface coating on said second diffusion layer, rEspectively, and providing metal electrodes on said gallium diffusion layer and said second diffusion layer through said second and third holes, respectively.
Claim 6
Independent Claim
48 words
A method for manufacturing a semiconductor device comprising the steps of forming a first silicon oxide layer on a surface portion of a semiconductor substrate, and forming a silicon nitride layer on a surface portion of the semiconductor substrate which is not covered with said silicon oxide layer.
Claim 7
Dependent Claim
27 words
A method according to claim 7, further comprising the step of forming in said silicon oxide layer a hole to expose a surface portion of the substrate.
Claim 8
Independent Claim
42 words
A method for manufacturing a semiconductor device comprising the steps of forming a silicon oxide layer on a surface of a semiconductor substrate, depositing a silicon layer on said silicon oxide layer, and forming a silicon nitride layer on said silicon layer.
Claim 9
Independent Claim
60 words
A method for manufacturing a semiconductor device comprising the steps of forming a silicon oxide layer on a surface portion of a semiconductor substrate, forming a silicon nitride layer on a surface portion of said semiconductor substrate to surround said silicon oxide layer, and forming a hole extending to the surface of said semiconductor substrate in said silicon oxide layer.
Claim 10
Independent Claim
73 words
A method for manufacturing a semiconductor device, comprising the steps of forming on a semiconductor substrate a mask layer including a silicon layer, the silicon layer covering a selective portion of a major surface of the semiconductor substrate but being spaced from the major surface by means of an insulating film interposed therebetween, and diffusing a conductivity type determining impurity selectively into the semiconductor substrate which is not covered with the silicon layer.
Claim 11
Dependent Claim
26 words
The method according to claim 11, wherein the insulating film consists essentially of insulating material selected from the group consisting of silicon oxide and silicon nitride.
Claim 12
Independent Claim
67 words
A method for manufacturing a semiconductor device comprising the steps of selectively covering a surface of a silicon substrate with a first insulating film consisting essentially of silicon nitride and then heating the combination in an oxidizing atmosphere so as to form a second insulating film consisting essentially of silicon oxide on the surface of the silicon substrate which is not covered with the first insulating film.
Claim 13
Independent Claim
42 words
A method for manufacturing a semiconductor device comprising the steps of forming an insulating film consisting essentially of silicon nitride partially on a surface of a silicon body and then oxidizing the exposed body on which the insulating film is not formed.
Claim 14
Independent Claim
68 words
A method of making a semiconductor device, comprising the steps of forming a first surface coating essentially consisting of one of the two materials consisting of silicon oxide and silicon nitride on at least a portion of a major surface of a substrate and forming a second surface coating including the other of said two materials on another portion of said major surface different from said one portion.
Claim 15
Dependent Claim
19 words
A method for manufacturing a semiconductor device according to claim 11, wherein said conductivity type impurity is of gallium.
Claim 16
Independent Claim
69 words
A method for manufacturing a semiconductor device, comprising the steps of forming an insulating film on a semiconductor substrate, forming a silicon layer on said insulating film so as to cover a selective portion of a major surface of said substrate but to be spaced from said substrate, and then introducing a conductivity type determining impurity selectively into a portion of the substrate not covered with said silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-11 | 1977-08-13 | 1978-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-11 | 1981-08-13 | 1982-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-11 | 1985-08-13 | 1986-02-12 | $7700.00 | Window Closed / Lapsed |