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US5605609A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for forming low refractive index film comprising silicon dioxide

Assignee: AGC Inc
•
Filing: 1994-10-17
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Granted: 1997-02-25
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Expires: 2014-10-17
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Abstract

Abstract The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.

Inventors

  • 👤 Eiichi Ando
  • 👤 Akira Mitsui
  • 👤 Junichi Ebisawa
  • 👤 Koichi Suzuki
  • 👤 Kiyoshi Matsumoto
  • 👤 Takuji Oyama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 06:13
CPC Classifications
G; G02; G02B; G02B1/00; G02B1/10; G02B1/11; G02B1/113; G02B1/115; G02B1/116; B; B32; B32B; B32B17/00; B32B17/06; B32B17/10; B32B17/10005; B32B17/10165; B32B17/10174; B32B27/00; B32B27/06; C; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C03C17/25; C03C17/34; C03C17/3411; C03C17/3417; C03C17/3429; C03C17/3435; C03C17/3482; C03C17/3488; C03C17/36; C03C17/3602; C03C17/3605; C03C17/3613; C03C17/3618; C03C17/3639; C03C17/3644; C03C17/3652; C03C17/3657; C03C17/3681; C03C17/38; C03C17/42; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/10; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; G02B1/105; G02B1/14; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/3426; H01J37/3435; H01J37/3488; H01J37/3491; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2217/229; C03C2217/23; C03C2217/24; C03C2217/242; C03C2217/70; C03C2217/73; C03C2217/732; C03C2218/00; C03C2218/10; C03C2218/11; C03C2218/15; C03C2218/154; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/133337; G02F1/1335; G02F1/133502; Y; Y02; Y02T; Y02T10/00; Y02T10/80; Y02T10/90

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 58 words
A method for forming a low refractive index film comprising silicon dioxide as the main component, by a DC sputtering method in an oxygen-containing atmosphere by means of a target comprising Si as the main component, which target contains Zr in an amount of from 4 to 35 atoms relative to from 65 to 96 atoms of Si.
Claim 2
Independent Claim 58 words
A method for forming a low refractive index film comprising silicon dioxide as the main component, by a DC sputtering method in an oxygen-containing atmosphere by means of a target comprising Si as the main component, which target contains Zr in an amount of from 4 to 35 atoms relative to from 65 to 96 atoms of Si.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-02-25 2000-08-26 2001-02-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-02-25 2004-08-26 2005-02-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-02-25 2008-08-26 2009-02-25 $7700.00 Window Closed / Lapsed

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