Patent DE342846C successfully refreshed from Google Patents.
US3575833A
Expired / Lapsed
US
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Hafnium nitride film resistor
Assignee: AT&T Inc
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Filing: 1968-02-26
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Granted: 1971-04-20
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Expires: 1988-02-26
Abstract
Abstract HAFNIUM NITRIDE THIN FILM RESISTORS ARE OBTAINED BY SPUTTERING HAFNIUM IN THE PRESENCE OF NITROGEN MAINTAINED AT PARTIAL PRESSURES WITHIN THE RANGE OF 10**4-10**2 TORR.
Inventors
- 👤 Dieter Gerstenberg
- 👤 Frank T J Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:50
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-19 | 1974-10-19 | 1975-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-19 | 1978-10-19 | 1979-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-19 | 1982-10-19 | 1983-04-20 | $7700.00 | Window Closed / Lapsed |