US4016061A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making resistive films
Assignee: Panasonic Holdings Corp
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Filing: 1974-01-16
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Granted: 1977-04-05
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Expires: 1994-01-16
Abstract
Abstract A resistive film composition consisting essentially of AlN and solid solution of TiN and ZrN and a method of making the same by means of cathodic sputtering.
Inventors
- 👤 Kiyotaka Wasa
- 👤 Fumio Hosomi
- 👤 Shigeru Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:37
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/06; C23C14/0641; H01B; H01B1/00; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of Al, Ti and Zr and having a structure such that the surface area is 5 to 40% Al, 15 to 85% Ti and 10 to 80% Zr, the ratio of the area Al to Ti being less than 0.7, in a nitriding atmosphere at a pressure of 10 - 4 to 10 - 3 Torr.
Claim 2
Independent Claim
80 words
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of Al, Ti and Zr and having a structure such that the surface area is 5 to 40% Al, 15 to 85% Ti and 10 to 80% Zr, the ratio of the area Al to Ti being less than 0.7, in a nitriding atmosphere at a pressure of 10 - 4 to 10 - 3 Torr.
Claim 3
Dependent Claim
42 words
A method of making a thin resistive film as claimed in claim 1, wherein said composite cathode has a structure such that the surface area is 5 to 26% of Al, 45 to 75% of Ti and 20 to 50% of Zr.
Claim 4
Independent Claim
75 words
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of 10 to 50 mole % of AlN, 10 to 80 mole % of ZrN and 10 to 80 mole % of TiN, the mole ratio of the AlN to TiN being less than 1.2, in a non-reactive gas at a pressure of 10 - 4 to 10 - 3 Torr.
Claim 5
Independent Claim
75 words
A method of making a thin resistive film comprising cathodically sputtering the thin resistive film onto a substrate from a composite cathode consisting essentially of 10 to 50 mole % of AlN, 10 to 80 mole % of ZrN and 10 to 80 mole % of TiN, the mole ratio of the AlN to TiN being less than 1.2, in a non-reactive gas at a pressure of 10 - 4 to 10 - 3 Torr.
Claim 6
Dependent Claim
20 words
A method of making a thin resistive film as claimed in claim 3, in which the non-reactive gas is argon.
Claim 7
Dependent Claim
42 words
A method of making a thin resistive film as claimed in claim 3, wherein said composite cathode consists essentially of 10 to 40 mole % of AlN, 20 to 50 mole % of ZrN and 40 to 70 mole % of TiN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-04 | 1980-10-04 | 1981-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-04 | 1984-10-04 | 1985-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-04 | 1988-10-04 | 1989-04-05 | $7700.00 | Window Closed / Lapsed |