US3664931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabrication of thin film capacitor
Assignee: Individual
•
Filing: 1970-07-27
•
Granted: 1972-05-23
•
Expires: 1990-07-27
Abstract
Abstract Thin film capacitors including a dielectric layer obtained by anodizing a layer obtained by sputtering a film-forming metal in a nitrogen or carbon containing ambient at partial pressures ranging from 10 3 to 10 5 torr. manifest marked improvement with regard to initial leakage and life test failure as compared with conventional prior art capacitors.
Inventors
- 👤 Dieter Gerstenberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:22
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
12 words
A method in accordance with claim 1 wherein said gas is nitrogen.
Claim 2
Dependent Claim
12 words
A method in accordance with claim 1 wherein said gas is methane.
Claim 3
Dependent Claim
16 words
A method in accordance with the procedure of claim 1 wherein said film-forming metal is tantalum.
Claim 4
Dependent Claim
12 words
A method in accordance with claim 4 wherein said gas is nitrogen.
References Cited (Backward Citations)
US2993266A
Cited
US3242006A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |