Thin film electrical resistors and process of producing the same

Claim 2

An electrical layer resistor comprised of a substrate and layer of electrically conductive material positioned on a surface of said substrate, said conductive material comprising a substantially homogeneous amorphous chromium-silicon-oxygen alloy having an empirical formula: Cr.sub.x Si.sub.y O.sub.z wherein x is a number in the range of 0.3 to 0.39, y is a number in the range of 0.4 to 0.52, and z is a number in the range of 0.1 to 0.30 with the proviso that the sum of x, y, and z is equal to one, said layer of conductive material having a thickness ranging between about 8 nm and 50 nm, said conductive material possessing a relative high degree of stability, a relatively low temperature coefficient of electrical resistance ranging between about 0 and -400 ppm/°K. and exhibiting a specific electrical resistance in the range of about 2000 to 16,000 μΩ·cm.

Claim 3

An electrical layer resistor as defined in claim 1 wherein said conductive material has a ratio of chromium to silicon such that the ratio of x to y in said empirical formula is equal to about 0.75.

Claim 4

A thin film electrical layer resistor comprised of a substrate and a layer of a conductive material positioned on a surface of said substrate, said conductive material comprising a substantially homogeneous amorphous alloy having an empirical formula of: Cr.sub.x Si.sub.y O.sub.z wherein x is a number in the range of about 0.3 to 0.39, y is a number in the range of about 0.4 to 0.52, and z is a number in the range of about 0.1 to 0.30, with the sum of x+y+z being 1; said layer of conductive material having a thickness ranging between about 8 nm and 50 nm, said conductive material possessing a relatively high degree of stability, a relatively low temperature coefficient of electrical resistance ranging between about 0 and -400 ppm/°K. and exhibiting a specific electrical resistance in the range of about 2,000 to 16,000·μΩcm; and said layer of conductive material being produced by: providing a source material having a select amount of elemental Cr and elemental Si therein to satisfy the above empirical formula; positioning a heat-controllable substrate within an enclosed operational material sputter deposition environment having a controlled oxygen partial pressure ranging from about 10 -3 torr to about 10 -4 torr and a controllable high-frequency electrical discharge therein; generating a flux of Cr and Si atoms from such source while substantially simultaneously generating a flux of O atoms within said enclosed operational material deposition environment; and depositing Cr, Si and O atoms as a substantially homogeneous amorphous alloy onto said substrate until a desired layer of thickness is attained while maintaining said substrate at a temperature range of about 350° C. to 450° C. during deposition.

Claim 5

A thin film electrical layer resistor comprised of a substrate and a layer of a conductive material positioned on a surface of said substrate, said conductive material comprising a substantially homogeneous amorphous alloy having an empirical formula of: Cr.sub.x Si.sub.y O.sub.z wherein x is a number in the range of about 0.3 to 0.39, y is a number in the range of about 0.4 to 0.52, and z is a number in the range of about 0.1 to 0.30, with the sum of x+y+z being 1; said layer of conductive material having a thickness ranging between about 8 nm and 50 nm, said conductive material possessing a relatively high degree of stability, a relatively low temperature coefficient of electrical resistance ranging between about 0 and -400 ppm/°K. and exhibiting a specific electrical resistance in the range of about 2,000 to 16,000·μΩcm; and said layer of conductive material being produced by: providing a source material having a select amount of elemental Cr and elemental Si therein to satisfy the above empirical formula; positioning a heat-controllable substrate within an enclosed operational material sputter deposition environment having a controlled oxygen partial pressure ranging from about 10 -3 torr to about 10 -4 torr and a controllable high-frequency electrical discharge therein; generating a flux of Cr and Si atoms from such source while substantially simultaneously generating a flux of O atoms within said enclosed operational material deposition environment; and depositing Cr, Si and O atoms as a substantially homogeneous amorphous alloy onto said substrate until a desired layer of thickness is attained while maintaining said substrate at a temperature range of about 350° C. to 450° C. during deposition.