Method of making resistor thin films by reactive sputtering from a composite source
Abstract
Abstract A METHOD OF MAKING HIGH RESISTIVITY THIN FILM RESISTORS BY REACTIVELY SPUTTERING A COMPOSITE SOURCE ONTO A SUBSTRATE IS DESCRIBED. THE COMPOSITE SOURCE COMPRISES A FIRST MATERIAL SELECTED FROM THE GROUP CONSISTING OF CHROMIUM, SILICON, BERYLLIUM, ALUMINUM AND MAGNESIUM AND A SECOND MATERIAL SELECTED FROM THE GROUP CONSISTING OF MOLYBDENUM, TANTALUM, TUNGSTEN, GOLD, SILVER, PLATINUM, OSMIUM AND IRIDIUM. IN THE PRESENCE OF A REACTIVE GAS SUCH AS NITROGEN, THE FIRST MATERIALS FORM A HIGH RESISTIVITY NITRIDE ON THE SUBSTRATE AND THE SECOND MATERIALS EITHER FORM A LOW RESISTIVITY NITRIDE ON THE SUBSTRATE OR ARE NON-REACTIVE WITH THE NITROGEN AND REMAIN IN THEIR ELEMENTAL STATES. THE RESULTING THIN FILMS HAVE RESITIVITIES RANGING BETWEEN THE HIGH RESISTIVITY NITRIDES AND THE LOW RESISTIVITY NITRIDES DEPENDING UPON THE COMPOSITION OF THE COMPOSITE SOURCE.
Inventors
- 👤 Linus F Cordes
Bibliographic Details
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