Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
130 words
A semi-conductor wafer processing machine comprising: an arm having a wafer carrier disposed at one end, said wafer carrier being rotatable with the rotating motion imparted to a semi-conductor wafer held thereon, said wafer carrier movable in the vertical direction to impart vertical movement to the wafer and pivotable about a vertical axis to move the wafer laterally; an annular rotatable pad having an open central region and an upper surface, said pad disposed below said wafer carrier; a tank disposed within the open central region of said annular pad, said tank containing a fluid bath for treating the wafer, wherein, the wafer may be moved vertically and laterally by said arm so as to selectively come into contact with said rotatable pad or be bathed in the fluid bath.
Claim 2
Dependent Claim
130 words
A semi-conductor wafer processing machine comprising: an arm having a wafer carrier disposed at one end, said wafer carrier being rotatable with the rotating motion imparted to a semi-conductor wafer held thereon, said wafer carrier movable in the vertical direction to impart vertical movement to the wafer and pivotable about a vertical axis to move the wafer laterally; an annular rotatable pad having an open central region and an upper surface, said pad disposed below said wafer carrier; a tank disposed within the open central region of said annular pad, said tank containing a fluid bath for treating the wafer, wherein, the wafer may be moved vertically and laterally by said arm so as to selectively come into contact with said rotatable pad or be bathed in the fluid bath.
Claim 3
Dependent Claim
50 words
The machine recited in claim 1, said fluid bath comprising an anodization solution, said machine including an electrical circuit including first and second electrical lead lines, one of said lead lines extending into the bath to a position which allows the lead to contact a wafer lowered into the bath.
Claim 4
Dependent Claim
13 words
The machine recited in claim 1, said fluid bath comprising an etching solution.
Claim 5
Dependent Claim
13 words
The machine recited in claim 1, said fluid bath comprising a cleaning fluid.
Claim 6
Independent Claim
110 words
A method for fabricating a chip on the surface of a semi-conductor wafer, the method comprising: disposing the wafer on a rotatable wafer carrier such that rotating motion is imparted to the wafer; bringing the rotating wafer into contact with the upper surface of an annular rotating pad having an open central region; and disposing the wafer in a fluid bath, wherein, the fluid bath is disposed within the open central region of the rotating pad such that the wafer may be moved vertically and laterally by action of the wafer carrier so as to selectively come into contact with the rotatable pad or be disposed in the fluid bath.
Claim 7
Independent Claim
110 words
A method for fabricating a chip on the surface of a semi-conductor wafer, the method comprising: disposing the wafer on a rotatable wafer carrier such that rotating motion is imparted to the wafer; bringing the rotating wafer into contact with the upper surface of an annular rotating pad having an open central region; and disposing the wafer in a fluid bath, wherein, the fluid bath is disposed within the open central region of the rotating pad such that the wafer may be moved vertically and laterally by action of the wafer carrier so as to selectively come into contact with the rotatable pad or be disposed in the fluid bath.
Claim 8
Dependent Claim
28 words
The method recited in claim 5, further comprising spraying a slurry on the upper surface of the pad while the wafer is in contact with the upper surface.
Claim 9
Dependent Claim
45 words
The method recited in claim 5, wherein, the fluid bath comprises an anodizing solution, the method further comprising maintaining an electrical current between the bath and the wafer while the wafer is disposed in the bath so as to anodize a surface of the wafer.
Claim 10
Dependent Claim
22 words
The method recited in claim 7, the wafer having a metal surface layer, the current causing the metal layer to be oxidized.
Claim 11
Dependent Claim
31 words
The method recited in claim 5, wherein, the fluid bath comprises an etching solution, the method further comprising etching a surface of the wafer while it is disposed in the bath.
Claim 12
Dependent Claim
115 words
A semi-conductor wafer processing machine comprising: an arm having a wafer carrier disposed at one end, said wafer carrier being rotatable with the rotating motion imparted to a semi-conductor wafer held thereon, said wafer carrier movable in the vertical direction to impart vertical movement to the wafer and pivotable about a vertical axis to move the wafer laterally; an annular rotatable pad having an open central region and an upper surface, said pad disposed below said wafer carrier; an electrically resistive hot plate disposed within said annular pad; wherein, the wafer may be moved vertically and laterally by said arm so as to selectively come into contact with said rotatable pad or said hot plate.
Claim 13
Dependent Claim
115 words
A semi-conductor wafer processing machine comprising: an arm having a wafer carrier disposed at one end, said wafer carrier being rotatable with the rotating motion imparted to a semi-conductor wafer held thereon, said wafer carrier movable in the vertical direction to impart vertical movement to the wafer and pivotable about a vertical axis to move the wafer laterally; an annular rotatable pad having an open central region and an upper surface, said pad disposed below said wafer carrier; an electrically resistive hot plate disposed within said annular pad; wherein, the wafer may be moved vertically and laterally by said arm so as to selectively come into contact with said rotatable pad or said hot plate.
Claim 14
Independent Claim
160 words
A method for polishing and oxidizing a semi-conductor wafer having a metal layer on one surface, the method comprising: disposing the wafer on a rotatable, pivotable and vertically movable wafer carrier; bringing the metal-layered surface into contact with the upper surface of an electrically resistive hot plate and thereby oxidizing the metal layer; moving the wafer to a location above a rotatable pad by causing the wafer carrier to pivot; causing the wafer carrier to rotate to thereby impart rotational motion to the wafer; and bringing the wafer into contact with the pad by pivoting the carrier and moving the carrier vertically downwardly while the pad is rotating to thereby polish the oxidized metal layer; wherein, the resistive hot plate is disposed within an open region of the rotating pad such that the wafer may be moved vertically and laterally by action of the wafer carrier so as to selectively come into contact with the rotatable pad and hot plate.
Claim 15
Independent Claim
160 words
A method for polishing and oxidizing a semi-conductor wafer having a metal layer on one surface, the method comprising: disposing the wafer on a rotatable, pivotable and vertically movable wafer carrier; bringing the metal-layered surface into contact with the upper surface of an electrically resistive hot plate and thereby oxidizing the metal layer; moving the wafer to a location above a rotatable pad by causing the wafer carrier to pivot; causing the wafer carrier to rotate to thereby impart rotational motion to the wafer; and bringing the wafer into contact with the pad by pivoting the carrier and moving the carrier vertically downwardly while the pad is rotating to thereby polish the oxidized metal layer; wherein, the resistive hot plate is disposed within an open region of the rotating pad such that the wafer may be moved vertically and laterally by action of the wafer carrier so as to selectively come into contact with the rotatable pad and hot plate.