Method of manufacturing a semiconductor device and a resist composition used therein

Claim 1

A method of manufacturing a semiconductor device for forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing positive type resist solution containing a phenol resin including at least 40 mole % of meta-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following formula ##STR6## (wherein, in the formula, R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) forming a resist film having a film thickness of at least 3 μm on said semiconductor substrate using said positive type resist solution, (c) selectively exposing said resist film to form an image, (d) baking said resist film at a temperature of 110° C.-130° C. after exposure and before developing, (e) developing and then rinsing said resist film to form a resist pattern, (f) baking said resist pattern at a temperature of 100° C.-130° C., (g) implanting impurity ions at high energy of 1 MeV or above to the main surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, and (h) removing said resist pattern.

Claim 2

A method of manufacturing a semiconductor device for forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing positive type resist solution containing a phenol resin including at least 40 mole % of meta-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following formula ##STR6## (wherein, in the formula, R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) forming a resist film having a film thickness of at least 3 μm on said semiconductor substrate using said positive type resist solution, (c) selectively exposing said resist film to form an image, (d) baking said resist film at a temperature of 110° C.-130° C. after exposure and before developing, (e) developing and then rinsing said resist film to form a resist pattern, (f) baking said resist pattern at a temperature of 100° C.-130° C., (g) implanting impurity ions at high energy of 1 MeV or above to the main surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, and (h) removing said resist pattern.

Claim 6

A method of forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing a positive type resist solution containing a phenol resin including at least 40 mole % of midi-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following formula ##STR7## (wherein, in the formula, R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) forming a resist film having a film thickness of at least 3 μm on said semiconductor substrate using said positive type resist solution, (c) patterning said resist film to a desired configuration to obtain a resist pattern, (d) implanting impurity ions at high energy of 1 MeV or above to the main surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, (e) heating said resist pattern at a temperature of at least 120° C. after said implantation of impurity ions, and (f) removing said resist pattern by ashing using a plasma including oxygen.

Claim 7

A method of forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing a positive type resist solution containing a phenol resin including at least 40 mole % of midi-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following formula ##STR7## (wherein, in the formula, R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) forming a resist film having a film thickness of at least 3 μm on said semiconductor substrate using said positive type resist solution, (c) patterning said resist film to a desired configuration to obtain a resist pattern, (d) implanting impurity ions at high energy of 1 MeV or above to the main surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, (e) heating said resist pattern at a temperature of at least 120° C. after said implantation of impurity ions, and (f) removing said resist pattern by ashing using a plasma including oxygen.

Claim 16

A method of forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing a positive type resist solution containing a phenol resin including at least 40 mole % of midi-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following general formula ##STR8## (wherein, in the formula R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) preparing a semiconductor substrate, (c) rinsing in a rinsing agent the surface of said semiconductor substrate to remove adsorbed atoms or a natural oxide film on the surface of said semiconductor substrate, (d) forming a resist film having a film thickness of at least 3 μm on the surface of said semiconductor substrate using said positive type resist solution, (e) selectively exposing said resist film to form an image, (f) developing said resist film to form a resist pattern, (g) implanting impurity ions at high energy of 1 MeV or above to the surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, and (h) removing said resist pattern.

Claim 17

A method of forming a buried impurity layer at a deep position of a semiconductor substrate, comprising the steps of: (a) preparing a positive type resist solution containing a phenol resin including at least 40 mole % of midi-cresol unit and having a weight-average molecular weight of at least 10000 in polystyrene conversion, and a photosensitive agent having a quinone diazide portion, wherein said quinone diazide portion is included by 0.40 mmol-0.55 mmol with respect to 1g of the whole resist solid, wherein said photosensitive agent having a quinone diazide portion has a structural unit represented by the following general formula ##STR8## (wherein, in the formula R 1 , R 2 , and R 3 represent OH, CH 3 or H and R 4 represents CH 3 or H), having a weight-average molecular weight of 500-2000 in polystyrene conversion, wherein said hydroxyl group in said formula is partially or completely esterified by 1,2-naphthoquinone diazide-4-sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid, (b) preparing a semiconductor substrate, (c) rinsing in a rinsing agent the surface of said semiconductor substrate to remove adsorbed atoms or a natural oxide film on the surface of said semiconductor substrate, (d) forming a resist film having a film thickness of at least 3 μm on the surface of said semiconductor substrate using said positive type resist solution, (e) selectively exposing said resist film to form an image, (f) developing said resist film to form a resist pattern, (g) implanting impurity ions at high energy of 1 MeV or above to the surface of said semiconductor substrate using said resist pattern as a mask to form a buried impurity layer at a deep position of said semiconductor substrate, and (h) removing said resist pattern.