Triamine positive photoresist stripping composition and post-ion implantation baking

Claim 2

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula: ##STR2## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80° C.

Claim 3

The integrated circuit fabrication process of claim 1 in which the triamine is diethylene triamine.

Claim 4

The integrated circuit fabrication process of claim 2 in which the positive organic photoresist layer is stripped from the semiconductor wafer by contacting the semiconductor wafer with the diethylene triamine at a temperature between about 80° C. and about 120° C. for a time of from about 1 minute to about 20 minutes.

Claim 5

The integrated circuit fabrication process of claim 1 additionally comprising subjecting the semiconductor wafer to ultrasonic vibration while stripping the positive organic photoresist layer with the triamine.

Claim 6

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

Claim 7

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

Claim 8

The integrated circuit fabrication process of claim 5 in which the positive organic photoresist layer is baked at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes.

Claim 9

The integrated circuit fabrication process of claim 5 additionally comprising subjecting the positive organic photoresist layer to ultrasonic vibration while contacting the positive organic photoresist layer with the liquid photoresist stripper for the positive organic photoresist.

Claim 10

The integrated circuit fabrication process of claim 5 in which the positive organic photoresist layer is contacted with the liquid photoresist stripper for the positive organic photoresist at a temperature between about 80° C. and about 120° C. for a time of from about 1 minute to about 20 minutes.

Claim 11

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula: ##STR3## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80° C.

Claim 12

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula: ##STR3## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80° C.

Claim 13

The integrated circuit fabrication process of claim 9 in which the triamine is diethylene triamine.

Claim 14

The integrated circuit fabrication process of claim 10 in which the positive organic photoresist layer is stripped from the semiconductor wafer by contacting the semiconductor wafer with the diethylene triamine at a temperature between about 80° C. and about 120° C. for a time of from about 1 minute to about 20 minutes.

Claim 15

The integrated circuit fabrication process of claim 9 additionally comprising subjecting the semiconductor wafer to ultrasonic vibration while stripping the positive organic photoresist layer with the triamine.

Claim 16

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

Claim 17

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, whereby ions are deposited into the positive organic photoresist layer and organometallic compounds are formed in the positive organic photoresist layer, after ion implanting, baking the positive organic photoresist layer at a temperature and for a time sufficient to make the positive organic photoresist layer more readily removable with a stripping liquid for the positive organic photoresist, whereby the formation of an organometallic film in the positive organic photoresist layer is completed, and then contacting the positive organic photoresist layer with a liquid photoresist stripper for the positive organic photoresist for a time sufficient to remove the positive organic photoresist layer from the semiconductor wafer.

Claim 18

The integrated circuit fabrication process of claim 13 in which the positive organic photoresist layer is baked at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes.

Claim 19

The integrated circuit fabrication process of claim 13 additionally comprising subjecting the positive organic photoresist layer to ultrasonic vibration while contacting the positive organic photoresist layer with the liquid photoresist stripper for the positive organic photoresist.

Claim 20

The integrated circuit fabrication process of claim 13 in which the positive organic photoresist layer is contacted with the liquid photoresist stripper for the positive organic photoresist at a temperature between about 80° C. and about 120° C. for a time of from about 1 minute to about 20 minutes.

Claim 21

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, thereby depositing ions in the desired area of the semiconductor wafer and in the photoresist layer, after ion implanting and immediately preceding stripping, baking the positive organic photoresist layer at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula: ##STR4## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80° C.

Claim 22

An integrated circuit fabrication process, which comprises forming a positive organic photoresist layer on a semiconductor wafer, defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer, doping the semiconductor wafer by ion implanting a dopant impurity into the semiconductor wafer through the opening in the positive organic photoresist layer, thereby depositing ions in the desired area of the semiconductor wafer and in the photoresist layer, after ion implanting and immediately preceding stripping, baking the positive organic photoresist layer at a temperature of between about 150° and 220° C. for a time of from about 15 minutes to about 30 minutes, and then stripping the positive organic photoresist layer from the semiconductor wafer with a triamine having the general formula: ##STR4## wherein R1 and R2 are, independently in each case, a difunctional straight or branched chain hydrocarbyl or substituted hydrocarbyl group having from about 2 to about 20 carbon atoms, by contacting the semiconductor wafer with the triamine at a temperature of at least about 80° C.

Claim 23

The process of claim 17 wherein the step of forming a positive organic photoresist layer on a semiconductor wafer comprises coating a semiconductor wafer with a layer of positive organic photoresist, and baking the photoresist-coated wafer in a first bake step at a temperature and for a time sufficient to provide a well defined and firmly adherent photoresist layer, and wherein the step of defining an opening in the positive organic photoresist layer comprises exposing the photoresist-coated wafer to activating light in a spatial pattern corresponding to the desired doping area in the semiconductor wafer, and developing the photoresist, thereby defining an opening in the positive organic photoresist layer corresponding to a desired doping area in the semiconductor wafer.