US5328560A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1993-05-27
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Granted: 1994-07-12
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Expires: 2013-05-27
Abstract
Abstract A method of manufacturing semiconductor devices is provided which is improved so as to form a resist pattern even in a substrate having a step thereon with well controlled dimensional precision, and carry out etching of an underlying substrate with well controlled dimensional precision. An underlying film of an organic substance having the properties of sublimation, photo absorption and insolubility in an organic solvent is formed on a semiconductor substrate. A resist is applied onto the underlying film. Light is selectively irradiated on the resist. The resist is developed to form a resist pattern. The semiconductor substrate is etched with the resist pattern used as a mask.
Inventors
- 👤 Tetsuro Hanawa
- 👤 Maria Op de Beeck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/11; G03F7/0045; G03F7/038; H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
69 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation, photo absorption, and insolubility in an organic solvent on a semiconductor substrate; applying resist on said underlying film; selectively irradiating light to said resist; developing said resist for forming a resist pattern; and etching said semiconductor substrate with said resist pattern used as a mask.
Claim 2
Independent Claim
69 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation, photo absorption, and insolubility in an organic solvent on a semiconductor substrate; applying resist on said underlying film; selectively irradiating light to said resist; developing said resist for forming a resist pattern; and etching said semiconductor substrate with said resist pattern used as a mask.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein said step of etching said semiconductor substrate is carried out for forming a gate electrode.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein the thickness of said underlying film is 500 to 2000 Å.
Claim 5
Dependent Claim
31 words
The method of claim 1, wherein said organic substance includes a conjugated macrocyclic organic substance selected from the group consisting of a non-metal phthalocyanine derivative, porphyrin derivatives and dihydro-dibenzo tetraaza-cyclotetradecyne derivatives.
Claim 6
Independent Claim
85 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate; doping an oxidizing gas in said underlying film for applying conductivity to said underlying film; applying resist onto said underlying film; effecting patterning on said resist with an electron beam; developing said resist for forming a resist pattern; and etching said semiconductor substrate with said resist pattern used as a mask.
Claim 7
Independent Claim
85 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate; doping an oxidizing gas in said underlying film for applying conductivity to said underlying film; applying resist onto said underlying film; effecting patterning on said resist with an electron beam; developing said resist for forming a resist pattern; and etching said semiconductor substrate with said resist pattern used as a mask.
Claim 8
Dependent Claim
31 words
The method of claim 5, wherein said organic substance includes a conjugated macrocyclic organic substance selected from the group consisting of a non-metal phthalocyanine derivative, porphyrin derivatives and dihydro-dibenzo tetraaza-cyclotetradecyne derivatives.
Claim 9
Dependent Claim
17 words
The method of claim 5, wherein said oxidizing gas is added by 0.1 ppm to 100,000 ppm.
Claim 10
Dependent Claim
28 words
The method of claim 5, wherein said oxidizing gas is gas selected from the group consisting of NO x , hydrogen halogenide, halogen gas and SO x .
Claim 11
Dependent Claim
17 words
The method of claim 5, wherein the thickness of said underlying film is 500 to 2000 Å.
Claim 12
Independent Claim
74 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate; doping an oxidizing gas in said underlying film for applying conductivity to said underlying film; applying resist onto said underlying film; patterning said resist; and implanting impurity ions in said semiconductor substrate with said patterned resist used as a mask.
Claim 13
Independent Claim
74 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate; doping an oxidizing gas in said underlying film for applying conductivity to said underlying film; applying resist onto said underlying film; patterning said resist; and implanting impurity ions in said semiconductor substrate with said patterned resist used as a mask.
Claim 14
Dependent Claim
25 words
The method of claim 10, wherein said step of implanting said impurity ions is carried out for forming a conductive region in said semiconductor substrate.
Claim 15
Dependent Claim
31 words
The method of claim 10, wherein said organic substance includes a conjugated macrocyclic organic substance selected from the group consisting of a non-metal phthalocyanine derivative, porphyrin derivatives and dihydro-dibenzo tetraaza-cyclotetradecyne derivatives.
Claim 16
Dependent Claim
28 words
The method of claim 10, wherein said oxidizing gas is gas selected from the group consisting of NO x , hydrogen halogenide, halogen gas and SO x .
Claim 17
Dependent Claim
17 words
The method of claim 10, wherein said oxidizing gas is added by 0.1 ppm to 100,000 ppm.
Claim 18
Dependent Claim
17 words
The method of claim 10, wherein the thickness of said underlying film is 500 to 2000 Å.
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