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US5587014A
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Method for manufacturing group III-V compound semiconductor crystals
Assignee: Sumitomo Chemical Co Ltd
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Filing: 1994-12-21
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Granted: 1996-12-24
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Expires: 2014-12-21
Abstract
Abstract There is provided a method for manufacturing group III-V compound semiconductors including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of group III elements having at least Ga in the molecules thereof and compounds having at least N in the molecules thereof as the raw materials, and the group III-V compound semiconductor crystals are grown in a reaction tube, and epitaxial layer of crystals are grown on a substrate made of a material different from that of the crystals to be grown, wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins, thereby to carry out gas-phase etching of the inner wall surface of a reaction tube. Epitaxial crystals having good crystallinity and surface morphology can be obtained with good reproducibility without impairing the productivity and stability of the product property.
Inventors
- 👤 Yasushi Iyechika
- 👤 Tomoyuki Takada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:47
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
141 words
A method for manufacturing group III-V compound semiconductor crystals including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of a group III metal having at least Ga in the molecule thereof and compounds having N in the molecule thereof as the raw materials, to grow a group III-V compound semiconductor crystal in a reaction tube and grow the crystal on a substrate made of a material different from the group III-V compound semiconductor crystal to be grown; wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements, and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins thereby to carry out gas phase etching of the inner wall surface of the reaction tube.
Claim 2
Independent Claim
141 words
A method for manufacturing group III-V compound semiconductor crystals including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of a group III metal having at least Ga in the molecule thereof and compounds having N in the molecule thereof as the raw materials, to grow a group III-V compound semiconductor crystal in a reaction tube and grow the crystal on a substrate made of a material different from the group III-V compound semiconductor crystal to be grown; wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements, and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins thereby to carry out gas phase etching of the inner wall surface of the reaction tube.
Claim 3
Independent Claim
148 words
A method for manufacturing group III-V compound semiconductor crystals including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of a group III metal having at least Ga in the molecule thereof and compounds having N in the molecule thereof as the raw materials, to grow a group III-V compound semiconductor crystal in a reaction tube and grow the crystal on a buffer layer which is grown on a substrate made of a material different from the group III-V compound semiconductor crystal to be grown; wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements, and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins thereby to carry out gas phase etching of the inner wall surface of the reaction tube.
Claim 4
Independent Claim
148 words
A method for manufacturing group III-V compound semiconductor crystals including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of a group III metal having at least Ga in the molecule thereof and compounds having N in the molecule thereof as the raw materials, to grow a group III-V compound semiconductor crystal in a reaction tube and grow the crystal on a buffer layer which is grown on a substrate made of a material different from the group III-V compound semiconductor crystal to be grown; wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements, and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins thereby to carry out gas phase etching of the inner wall surface of the reaction tube.
Claim 5
Dependent Claim
33 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 2, wherein the buffer layer is selected from a group consisting of Ga z Al 1-z N (0≦z≦1) and ZnO.
Claim 6
Dependent Claim
30 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1, wherein the gas phase etching is applied to a substrate in addition to the reaction tube.
Claim 7
Dependent Claim
30 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 2, wherein the gas phase etching is applied to a substrate in addition to the reaction tube.
Claim 8
Dependent Claim
74 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1 or 2, wherein the group III-V compound semiconductor is GaN, Ga x Al 1-x N (0<x<1), Ga x In 1-x N (0<x<1), Ga x Al y In 1-x-y N (0<x<1, 0<y<1, 0<x+y<1), GaN y P 1-y (0<y<1) or GaN y As 1-y (0<y<1), or a lamination of at least two layers of a compound semiconductor made of the aforesaid materials.
Claim 9
Dependent Claim
28 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1, 2, 3, 4 or 5 wherein an α-alumina substrate is used as the substrate.
Claim 10
Dependent Claim
29 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1, 2, 3, 4 or 5 wherein a silicon carbide substrate is used as the substrate.
Claim 11
Dependent Claim
28 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1, 2, 3, 4 or 5 wherein a silicon substrate is used as the substrate.
Claim 12
Dependent Claim
26 words
The method for manufacturing group III-V compound semiconductor crystals as claimed in claim 1, 2, 3, 4 or 5 wherein the hydrogen halide is hydrogen chloride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-24 | 2004-06-24 | 2004-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-24 | 2008-06-24 | 2008-12-24 | $7700.00 | Window Closed / Lapsed |