Patent US5585282A successfully refreshed from Google Patents.
US5585282A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor
Assignee: Micron Technology Inc
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Filing: 1995-03-20
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Granted: 1996-12-17
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Expires: 2015-03-20
Abstract
Abstract A process for forming die contacting substrate for establishing ohmic contact with the die is formed with raised portions on contact members. The raised portions are dimensioned so that a compression force applied to the die against the substrate results in a limited penetration of the contact member into the bondpads. In the preferred embodiment, the substrate is formed of semiconductor material, with the raised portions being formed by etching. The arrangement may be used for establishing temporary electrical contact with a burn-in oven and with a discrete die tester. This permits the die to be characterized prior to assembly, so that the die may then be transferred in an unpackaged form. A Z-axis anisotropic conductive interconnect material may be interposed between the die attachment surface and the die.
Inventors
- 👤 Alan G. Wood
- 👤 Trung T. Doan
- 👤 Warren M. Farnworth
- 👤 Tim J. Corbett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:50
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/40; H05K3/4007; G; G01; G01R; G01R1/00; G01R1/02; G01R1/04; G01R1/0408; G01R1/0433; G01R1/0441; G01R1/0466; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10P74/00; H10P74/23; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/67; H10W70/68; H10W90/00; H10W90/701; G01R3/00; H05K2201/00; H05K2201/01; H05K2201/0104; H05K2201/0133; H05K2201/03; H05K2201/0332; H05K2201/0335; H05K2201/0347; H05K2201/0364; H05K2201/0367; H05K2201/0388; H05K2201/0394; H05K2201/09; H05K2201/09209; H05K2201/09372; H05K2201/09481; H05K2201/095; H05K2201/09563; H05K2203/00; H05K2203/03; H05K2203/0307; H05K2203/07; H05K2203/0703; H05K2203/0723; H05K3/0058; H05K3/0067; H05K3/42; H05K3/423; H10W70/654; H10W70/655; H10W70/681; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/07252; H10W72/07253; H10W72/073; H10W72/074; H10W72/20; H10W72/221; H10W72/231; H10W72/232; H10W72/234; H10W72/241; H10W72/29; H10W72/90; H10W72/951; H10W72/952; H10W90/20; H10W90/24; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
153 words
A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a contact on the substrate, said contact projecting from a surface of the substrate by a distance of from 20 μm to 75 μm to provide a clearance between the die and substrate; forming a raised portion on the contact, said raised portion shaped as an elongated ridge projecting from a surface of the contact with a height of from 2 Åto 1.5 μm, for penetrating the contact location to a penetration depth that is less than a thickness of the contact location while the surface of the contact limits the penetration depth into the contact location; and forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location.
Claim 2
Independent Claim
153 words
A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a contact on the substrate, said contact projecting from a surface of the substrate by a distance of from 20 μm to 75 μm to provide a clearance between the die and substrate; forming a raised portion on the contact, said raised portion shaped as an elongated ridge projecting from a surface of the contact with a height of from 2 Åto 1.5 μm, for penetrating the contact location to a penetration depth that is less than a thickness of the contact location while the surface of the contact limits the penetration depth into the contact location; and forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location.
Claim 3
Dependent Claim
23 words
The method as claimed in claim 1 and wherein a plurality of raised portions shaped as elongated ridges are formed on the contact.
Claim 4
Dependent Claim
18 words
The method as claimed in claim 2 and wherein the elongated ridges are formed in a concentric pattern.
Claim 5
Dependent Claim
18 words
The method as claimed in claim 1 and wherein said raised portion is formed by etching the substrate.
Claim 6
Dependent Claim
24 words
The method as claimed in claim 4 and wherein said contact is formed as a plateau by etching the substrate around the raised portion.
Claim 7
Dependent Claim
36 words
The method as claimed in claim 5 and wherein said contact is formed by forming a mask on the substrate, etching the substrate around the raised portion to form the plateau and then removing the mask.
Claim 8
Dependent Claim
21 words
The method as claimed in claim 6 and wherein the raised portion is etched at an etch angle of approximately 55°.
Claim 9
Dependent Claim
17 words
The method as claimed in claim 7 and wherein the raised portion is formed by wet etching.
Claim 10
Dependent Claim
28 words
The method as claimed in claim 1 and wherein the substrate is formed of a material selected from the group consisting of silicon, germanium and silicon on sapphire.
Claim 11
Dependent Claim
19 words
The method as claimed in claim 1 and wherein the raised portion is formed as a pointed elongated ridge.
Claim 12
Independent Claim
170 words
A method for forming a contact member for establishing electrical contact with a pattern of contact locations on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a first mask on the substrate; etching the substrate around the mask to form a plurality of elongated ridges with each ridge projecting from the substrate with a height of from 2 Å to 1.5 μm for penetrating the contact location to a penetration depth that is less than a thickness of the contact locations; forming a second mask on the substrate; etching the substrate around each ridge to form a plurality of raised contacts in a pattern matching the pattern of contact locations, each contact projecting from a surface of the substrate by a distance of from 20 μm to 75 μm to provide a clearance between the die and substrate; and forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location.
Claim 13
Independent Claim
170 words
A method for forming a contact member for establishing electrical contact with a pattern of contact locations on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a first mask on the substrate; etching the substrate around the mask to form a plurality of elongated ridges with each ridge projecting from the substrate with a height of from 2 Å to 1.5 μm for penetrating the contact location to a penetration depth that is less than a thickness of the contact locations; forming a second mask on the substrate; etching the substrate around each ridge to form a plurality of raised contacts in a pattern matching the pattern of contact locations, each contact projecting from a surface of the substrate by a distance of from 20 μm to 75 μm to provide a clearance between the die and substrate; and forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location.
Claim 14
Dependent Claim
15 words
The method as claimed in claim 11 and wherein each elongated ridge includes sloped sidewalls.
Claim 15
Dependent Claim
22 words
The method as claimed in claim 12 and wherein each contact includes a plurality of elongated ridges arranged in a concentric pattern.
Claim 16
Dependent Claim
25 words
The method as claimed in claim 13 and wherein the ridges are etched at an angle of approximately 55° using an isotropic wet etch process.
Claim 17
Dependent Claim
29 words
The method as claimed in claim 14 and wherein each contact is formed as a raised plateau with the ridges formed on a flat top surface of the plateau.
Claim 18
Dependent Claim
18 words
The method as claimed in claim 15 and wherein the conductive traces are formed using a metallization process.
Claim 19
Dependent Claim
19 words
The method as claimed in claim 16 and wherein the conductive traces are formed using a conductive doping process.
Claim 20
Independent Claim
155 words
A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a raised contact on the substrate for contacting the contact location, said raised contact formed with a height to provide a clearance between the substrate and the contact location of at least 20 μm; forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location; and forming a raised portion on the contact, said raised portion shaped as an elongated ridge projecting from a surface of the contact with a height of from 2 Å to 1.5 μm, for penetrating the contact location to a penetration depth that is less than a thickness of the contact location while the surface of the contact limits the penetration depth into the contact location.
Claim 21
Independent Claim
155 words
A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a raised contact on the substrate for contacting the contact location, said raised contact formed with a height to provide a clearance between the substrate and the contact location of at least 20 μm; forming a conductive trace on the substrate for transmitting signals to and from said contact to the contact location; and forming a raised portion on the contact, said raised portion shaped as an elongated ridge projecting from a surface of the contact with a height of from 2 Å to 1.5 μm, for penetrating the contact location to a penetration depth that is less than a thickness of the contact location while the surface of the contact limits the penetration depth into the contact location.
Claim 22
Dependent Claim
18 words
The method as claimed in claim 18 and wherein said raised portion is formed by etching the substrate.
Claim 23
Dependent Claim
29 words
The method as claimed in claim 19 and wherein said contact is formed as a plateau with a flat top surface by etching the substrate around the raised portion.
References Cited (Backward Citations)
US3581151A
Cited
US4063271A
Cited
US4189825A
Cited
US4312117A
Cited
JPS57143838A
Cited
US4585991A
Cited
US5014161A
Cited
US5262718A
Cited
US5072116A
Cited
EP0329314A1
Cited
US4881118A
Cited
US4929999A
Cited
US5103557A
Cited
US4924589A
Cited
US4952272A
Cited
JPH025540A
Cited
US4937653A
Cited
JPH02232946A
Cited
US5073117A
Cited
JPH0369131A
Cited
US4963225A
Cited
US5045780A
Cited
US5123850A
Cited
JPH0410446A
Cited
US5070297A
Cited
US5059898A
Cited
US5088190A
Cited
US5225037A
Cited
US5177438A
Cited
US5177439A
Cited
US5323035A
Cited
US5326428A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |