US5583373A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
Assignee: National Semiconductor Corp
•
Filing: 1995-10-12
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Granted: 1996-12-10
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Expires: 2015-10-12
Abstract
Abstract A preferred embodiment of an integrated semiconductor device includes a semiconductor die having a hole therethrough. A paddle member includes a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole. A cap layer is bonded to the semiconductor die to completely cover the hole, the paddle member, and the handle member. The second surface of the semiconductor die is bonded to the lead frame. A preferred embodiment of a method of manufacturing an integrated semiconductor device includes the steps of: forming a semiconductor die having a paddle area for isolating sensitive circuitry and an unoccupied area which substantially surrounds the paddle area except for a handle area, forming a trench in the unoccupied area, covering the paddle area, the trench, and the handle area with a sacrificial spacer material, covering the sacrificial spacer material with a cap layer, etching the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die, and bonding the second surface of the semiconductor die to a lead frame.
Inventors
- 👤 James V. Ball
- 👤 Robert A. Pease
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:53
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/10; H10D89/105; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
215 words
An integrated semiconductor device, comprising: a semiconductor die having a first surface, a second surface, and a thickness, the semiconductor die being formed from a first material and having an opening formed in the first surface; a paddle member for isolating portions of circuitry from mechanical stress and thermal gradients, the paddle member being formed from the first material and having a first surface, a second surface, and a thickness that is less than the thickness of the semiconductor die; a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the opening, the handle member being formed from the first material and having a thickness which permits it to flex so that the paddle member can move with respect to the semiconductor die; and a cap bonded to the first surface of the semiconductor die to completely cover the opening, the paddle member, and the handle member, all portions of the cap being spaced apart from all portions of the paddle member so that the cap does not make contact with the paddle member and to provide a cavity between the cap and the paddle member so that the paddle member can move within the cavity free of any mechanical contact with any part of the cap.
Claim 2
Dependent Claim
215 words
An integrated semiconductor device, comprising: a semiconductor die having a first surface, a second surface, and a thickness, the semiconductor die being formed from a first material and having an opening formed in the first surface; a paddle member for isolating portions of circuitry from mechanical stress and thermal gradients, the paddle member being formed from the first material and having a first surface, a second surface, and a thickness that is less than the thickness of the semiconductor die; a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the opening, the handle member being formed from the first material and having a thickness which permits it to flex so that the paddle member can move with respect to the semiconductor die; and a cap bonded to the first surface of the semiconductor die to completely cover the opening, the paddle member, and the handle member, all portions of the cap being spaced apart from all portions of the paddle member so that the cap does not make contact with the paddle member and to provide a cavity between the cap and the paddle member so that the paddle member can move within the cavity free of any mechanical contact with any part of the cap.
Claim 3
Dependent Claim
36 words
An integrated semiconductor device in accordance with claim 1, wherein: the paddle member has circuitry mounted thereon; and the handle member provides a path for making electrical connection between the paddle member and the semiconductor die.
Claim 4
Dependent Claim
30 words
An integrated semiconductor device in accordance with claim 1, wherein: the opening in the semiconductor die is substantially rectangular in shape; and the paddle member is substantially rectangular in shape.
Claim 5
Dependent Claim
24 words
An integrated semiconductor device in accordance with claim 1, wherein the paddle member first surface is substantially parallel with the semiconductor die first surface.
Claim 6
Dependent Claim
17 words
An integrated semiconductor device in accordance with claim 1, wherein the cap comprises a layer of polysilicon.
Claim 7
Dependent Claim
34 words
An integrated semiconductor device in accordance with claim 1, further comprising at least one additional handle member connected between the paddle member and the semiconductor die for supporting the paddle member in the opening.
Claim 8
Dependent Claim
20 words
An integrated semiconductor device in accordance with claim 1, wherein the handle member includes a plurality of angles formed therein.
Claim 9
Dependent Claim
19 words
An integrated semiconductor device in accordance with claim 1, further comprising: a heated substrate deposited on the paddle member.
Claim 10
Dependent Claim
27 words
An integrated semiconductor device in accordance with claim 1, further comprising: a lead frame, the second surface of the semiconductor die being bonded to the lead frame.
Claim 11
Dependent Claim
225 words
An integrated semiconductor device, comprising: a semiconductor die having a first surface, a second surface, and a thickness, the semiconductor die being formed from a first material and having a hole that extends from the first surface through the semiconductor die to the second surface; a paddle member formed from the first material and having a first surface, a second surface, and a thickness that is less than the thickness of the semiconductor die; a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole, the handle member being formed from the first material and having a thickness which permits it to flex so that the paddle member can move with respect to the semiconductor die; a cap bonded to the first surface of the semiconductor die to completely cover the hole, the paddle member, and the handle member, all portions of the cap being spaced apart from all portions of the paddle member so that the cap does not make contact with the paddle member and to provide a cavity between the cap and the paddle member so that the paddle member can move within the cavity free of any mechanical contact with any part of the cap; and a lead frame, the second surface of the semiconductor die being bonded to the lead frame.
Claim 12
Dependent Claim
225 words
An integrated semiconductor device, comprising: a semiconductor die having a first surface, a second surface, and a thickness, the semiconductor die being formed from a first material and having a hole that extends from the first surface through the semiconductor die to the second surface; a paddle member formed from the first material and having a first surface, a second surface, and a thickness that is less than the thickness of the semiconductor die; a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole, the handle member being formed from the first material and having a thickness which permits it to flex so that the paddle member can move with respect to the semiconductor die; a cap bonded to the first surface of the semiconductor die to completely cover the hole, the paddle member, and the handle member, all portions of the cap being spaced apart from all portions of the paddle member so that the cap does not make contact with the paddle member and to provide a cavity between the cap and the paddle member so that the paddle member can move within the cavity free of any mechanical contact with any part of the cap; and a lead frame, the second surface of the semiconductor die being bonded to the lead frame.
Claim 13
Dependent Claim
36 words
An integrated semiconductor device in accordance with claim 10, wherein: the paddle member has circuitry mounted thereon; and the handle member provides a path for making electrical connection between the paddle member and the semiconductor die.
Claim 14
Dependent Claim
30 words
An integrated semiconductor device in accordance with claim 10, wherein: the hole in the semiconductor die is substantially rectangular in shape; and the paddle member is substantially rectangular in shape.
Claim 15
Dependent Claim
24 words
An integrated semiconductor device in accordance with claim 10, wherein the paddle member first surface is substantially parallel with the semiconductor die first surface.
Claim 16
Dependent Claim
17 words
An integrated semiconductor device in accordance with claim 10, wherein the cap comprises a layer of polysilicon.
Claim 17
Dependent Claim
26 words
An integrated semiconductor device in accordance with claim 10, further comprising at least one additional handle member for connecting the paddle member to the semiconductor die.
Claim 18
Dependent Claim
21 words
An integrated semiconductor device in accordance with claim 15, wherein the handle members each have a plurality of angles formed therein.
Claim 19
Dependent Claim
19 words
An integrated semiconductor device in accordance with claim 10, further comprising: a heated substrate deposited on the paddle member.
References Cited (Backward Citations)
US3585416A
Cited
US4696188A
Cited
US4571661A
Cited
US4672411A
Cited
US4706374A
Cited
US4772928A
Cited
US4774633A
Cited
US4864383A
Cited
US4910582A
Cited
US4996411A
Cited
US4849071A
Cited
US4892842A
Cited
US5045503A
Cited
US4990986A
Cited
US5115292A
Cited
US5037782A
Cited
US5006487A
Cited
US5051379A
Cited
US5283459A
Cited
US5242863A
Cited
US5272374A
Cited
US5138414A
Cited
US5059543A
Cited
US5103279A
Cited
US5202281A
Cited
US5129983A
Cited
US5155061A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |