Method of treating an integrated circuit

Claim 1

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, the die having at least two distinct functional regions that are electrically connected together, comprising the steps of: mounting the die by way of its front face on a support member, and removing material of the die by way of the back face so as to separate the functional regions of the die from each other without disconnecting the functional regions from each other.

Claim 2

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, the die having at least two distinct functional regions that are electrically connected together, comprising the steps of: mounting the die by way of its front face on a support member, and removing material of the die by way of the back face so as to separate the functional regions of the die from each other without disconnecting the functional regions from each other.

Claim 5

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, the die having at least two distinct functional regions that are electrically connected together and a peripheral region that surrounds the functional regions, the die having a layer of dielectric material adhered to its front face, wherein the method comprises the steps of: forming metal bonding portions on the layer of dielectric material, said bonding portions extending at least partially over the peripheral region of the die, adhering a support member to the layer of dielectric material and said bonding portions, selectively etching the die by way of its back face with an etchant that does not attack the dielectric material, so as to separate the functional regions of the die from each other without disconnecting the functional regions electrically from each other, and removing material of the peripheral region of the die so as to expose the portion of the layer of dielectric material over the peripheral region of the die and removing the exposed portion of the layer of dielectric material so as to expose the bonding portions.

Claim 6

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, the die having at least two distinct functional regions that are electrically connected together and a peripheral region that surrounds the functional regions, the die having a layer of dielectric material adhered to its front face, wherein the method comprises the steps of: forming metal bonding portions on the layer of dielectric material, said bonding portions extending at least partially over the peripheral region of the die, adhering a support member to the layer of dielectric material and said bonding portions, selectively etching the die by way of its back face with an etchant that does not attack the dielectric material, so as to separate the functional regions of the die from each other without disconnecting the functional regions electrically from each other, and removing material of the peripheral region of the die so as to expose the portion of the layer of dielectric material over the peripheral region of the die and removing the exposed portion of the layer of dielectric material so as to expose the bonding portions.

Claim 8

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, at least two distinct functional regions, a peripheral region surrounding the functional regions, and a layer of dielectric material adhered to its front face, said method comprising the steps of: forming metal bonding portions on the layer of dielectric material, said bonding portions extending at least partially over the peripheral region of the die, mounting the die by way of its front face on a support member that adheres to the layer of dielectric material and the bonding portions, removing material of the die by way of the back face so as to separate the functional regions of the die from each other and expose the layer of dielectric material over the peripheral region, and removing exposed dielectric material so as to expose the bonding portions.

Claim 9

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face, at least two distinct functional regions, a peripheral region surrounding the functional regions, and a layer of dielectric material adhered to its front face, said method comprising the steps of: forming metal bonding portions on the layer of dielectric material, said bonding portions extending at least partially over the peripheral region of the die, mounting the die by way of its front face on a support member that adheres to the layer of dielectric material and the bonding portions, removing material of the die by way of the back face so as to separate the functional regions of the die from each other and expose the layer of dielectric material over the peripheral region, and removing exposed dielectric material so as to expose the bonding portions.

Claim 13

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face and having a layer of dielectric material adhered to its front face, the die having at least two distinct functional regions in which circuits for performing different functions are formed, the two distinct regions of the die being spaced apart from one another and being electrically interconnected by at least one strip of conductive material on the layer of dielectric material, and the die also having a peripheral region that surrounds the functional regions, the method comprising the steps of: (a) forming at least one metal bonding portion on the layer of dielectric material, said bonding portion being connected to one of the functional regions and extending over the peripheral region of the die, (b) adhering the layer of dielectric material to a support member, whereby the die is mounted on the support member, (c) etching the die by way of the back face so as to separate the functional regions of the die from each other, using an etchant that does not attack the dielectric material, whereby the dielectric material masks the strip of conductive material from the etchant and the functional regions remain electrically interconnected, (d) removing material of the peripheral region of the die by way of the back face, so as to expose the portion of the layer of dielectric material over the peripheral region of the die, and (e) removing the dielectric material exposed in step (d) so as to expose the bonding portion.

Claim 14

A method of treating an integrated circuit formed in a semiconductor die having a front face and a back face and having a layer of dielectric material adhered to its front face, the die having at least two distinct functional regions in which circuits for performing different functions are formed, the two distinct regions of the die being spaced apart from one another and being electrically interconnected by at least one strip of conductive material on the layer of dielectric material, and the die also having a peripheral region that surrounds the functional regions, the method comprising the steps of: (a) forming at least one metal bonding portion on the layer of dielectric material, said bonding portion being connected to one of the functional regions and extending over the peripheral region of the die, (b) adhering the layer of dielectric material to a support member, whereby the die is mounted on the support member, (c) etching the die by way of the back face so as to separate the functional regions of the die from each other, using an etchant that does not attack the dielectric material, whereby the dielectric material masks the strip of conductive material from the etchant and the functional regions remain electrically interconnected, (d) removing material of the peripheral region of the die by way of the back face, so as to expose the portion of the layer of dielectric material over the peripheral region of the die, and (e) removing the dielectric material exposed in step (d) so as to expose the bonding portion.