US5283459A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor sensor including an aperture having a funnel shaped section intersecting a second section
Assignee: Toshiba Corp
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Filing: 1991-12-20
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Granted: 1994-02-01
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Expires: 2011-12-20
Abstract
Abstract A semiconductor sensor with a compact structure is provided, which comprises a semiconductor substrate, a semiconductor diaphragm integrally formed with the semiconductor substrate, and a penetrating aperture formed in the semiconductor substrate so as to surround desired sides of the diaphragm. The aperture has first and second funnel-shaped aperatures whose intersecting conic sections open toward opposite directions. A cavity for defining the diaphragm is provided when the semiconductor substrate is subjected to electrolytic etching to form the second funnel-shaped aperture therein.
Inventors
- 👤 Hirokazu Hirano
- 👤 Bunshiro Yamaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:18
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/12; G01P15/123
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
130 words
A semiconductor sensor comprising: a semiconductor substrate of a first conductivity type having upper and lower surfaces; a semiconductor diaphragm defined by a cavity formed in said semiconductor substrate; a penetrating aperture provided in said semiconductor substrate to surround desired sides of said diaphragm; and said aperture including a first section having a first depth and a second section having a second depth deeper than said first depth, wherein said first section includes a first opening portion having a first diameter in the upper surface and said second section includes a second opening portion having in the lower surface a second diameter larger than said first diameter, and said first section communicates with said second section through a common opening portion having a third diameter smaller than said first diameter.
Claim 2
Dependent Claim
130 words
A semiconductor sensor comprising: a semiconductor substrate of a first conductivity type having upper and lower surfaces; a semiconductor diaphragm defined by a cavity formed in said semiconductor substrate; a penetrating aperture provided in said semiconductor substrate to surround desired sides of said diaphragm; and said aperture including a first section having a first depth and a second section having a second depth deeper than said first depth, wherein said first section includes a first opening portion having a first diameter in the upper surface and said second section includes a second opening portion having in the lower surface a second diameter larger than said first diameter, and said first section communicates with said second section through a common opening portion having a third diameter smaller than said first diameter.
Claim 3
Dependent Claim
14 words
The semiconductor sensor according to claim 1, wherein said cavity has a funnel-shaped structure.
Claim 4
Dependent Claim
26 words
The semiconductor sensor according to claim 1, wherein said semiconductor diaphragm is a second conductivity type opposite to said first conductivity type of said semiconductor substrate.
Claim 5
Dependent Claim
33 words
The semiconductor sensor according to claim 1, wherein said first and second sections are located such that a straight line passed through a center of each of said first, second and third diameters.
Claim 6
Dependent Claim
13 words
The semiconductor sensor according to claim 1, wherein said first section is funnel-shaped.
Claim 7
Dependent Claim
13 words
The semiconductor sensor according to claim 1, wherein said first section is square.
Claim 8
Dependent Claim
13 words
The semiconductor sensor according to claim 1, wherein said second section is funnel-shaped.
Claim 9
Dependent Claim
21 words
The semiconductor sensor according to claim 1, wherein a thickness of said semiconductor diaphragm is substantially equal to said first depth.
References Cited (Backward Citations)
US3888703A
Cited
EP0178662A2
Cited
US4908693A
Cited
US4975390A
Cited
JPH01239882A
Cited
US5006487A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-31 | 1997-08-02 | 1998-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-31 | 2001-08-02 | 2002-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-31 | 2005-08-02 | 2006-02-01 | $7700.00 | Window Closed / Lapsed |