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US5283459A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor sensor including an aperture having a funnel shaped section intersecting a second section

Assignee: Toshiba Corp
•
Filing: 1991-12-20
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Granted: 1994-02-01
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Expires: 2011-12-20
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Abstract

Abstract A semiconductor sensor with a compact structure is provided, which comprises a semiconductor substrate, a semiconductor diaphragm integrally formed with the semiconductor substrate, and a penetrating aperture formed in the semiconductor substrate so as to surround desired sides of the diaphragm. The aperture has first and second funnel-shaped aperatures whose intersecting conic sections open toward opposite directions. A cavity for defining the diaphragm is provided when the semiconductor substrate is subjected to electrolytic etching to form the second funnel-shaped aperture therein.

Inventors

  • 👤 Hirokazu Hirano
  • 👤 Bunshiro Yamaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 00:18
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/12; G01P15/123

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 130 words
A semiconductor sensor comprising: a semiconductor substrate of a first conductivity type having upper and lower surfaces; a semiconductor diaphragm defined by a cavity formed in said semiconductor substrate; a penetrating aperture provided in said semiconductor substrate to surround desired sides of said diaphragm; and said aperture including a first section having a first depth and a second section having a second depth deeper than said first depth, wherein said first section includes a first opening portion having a first diameter in the upper surface and said second section includes a second opening portion having in the lower surface a second diameter larger than said first diameter, and said first section communicates with said second section through a common opening portion having a third diameter smaller than said first diameter.
Claim 2
Dependent Claim 130 words
A semiconductor sensor comprising: a semiconductor substrate of a first conductivity type having upper and lower surfaces; a semiconductor diaphragm defined by a cavity formed in said semiconductor substrate; a penetrating aperture provided in said semiconductor substrate to surround desired sides of said diaphragm; and said aperture including a first section having a first depth and a second section having a second depth deeper than said first depth, wherein said first section includes a first opening portion having a first diameter in the upper surface and said second section includes a second opening portion having in the lower surface a second diameter larger than said first diameter, and said first section communicates with said second section through a common opening portion having a third diameter smaller than said first diameter.
Claim 3
Dependent Claim 14 words
The semiconductor sensor according to claim 1, wherein said cavity has a funnel-shaped structure.
Claim 4
Dependent Claim 26 words
The semiconductor sensor according to claim 1, wherein said semiconductor diaphragm is a second conductivity type opposite to said first conductivity type of said semiconductor substrate.
Claim 5
Dependent Claim 33 words
The semiconductor sensor according to claim 1, wherein said first and second sections are located such that a straight line passed through a center of each of said first, second and third diameters.
Claim 6
Dependent Claim 13 words
The semiconductor sensor according to claim 1, wherein said first section is funnel-shaped.
Claim 7
Dependent Claim 13 words
The semiconductor sensor according to claim 1, wherein said first section is square.
Claim 8
Dependent Claim 13 words
The semiconductor sensor according to claim 1, wherein said second section is funnel-shaped.
Claim 9
Dependent Claim 21 words
The semiconductor sensor according to claim 1, wherein a thickness of said semiconductor diaphragm is substantially equal to said first depth.

References Cited (Backward Citations)

US3888703A Cited
EP0178662A2 Cited
US4908693A Cited
US4975390A Cited
JPH01239882A Cited
US5006487A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-31 1997-08-02 1998-02-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-31 2001-08-02 2002-02-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-31 2005-08-02 2006-02-01 $7700.00 Window Closed / Lapsed

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