EP0178662A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacture for semiconductor accelerometer
Assignee: Nissan Motor Co Ltd
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Filing: 1985-10-17
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Granted: —
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Expires: 2005-10-17
Abstract
Abstract An improved method of manufacturing semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is devided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathord with a suitable voltage applied. Certain portion of the substrate is protected from the etching by the voltage.
Inventors
- 👤 Koichi Murakami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 21:34
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/12; G01P15/123; F; F16; F16C; F16C11/00; F16C11/04; F16C11/12; G01P15/0802; G01P15/125; H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
137 words
A method of manufacture for semiconductor accelerometer with a cantilevered beam comprising: a step of providing an upper layer of a first conductivity type on a semiconductor substrate of a second conductivity type opposite to the first conductivity type; a step of providing an electrode in ohmic contact with the upper layer; a step of forming a patterned region of the second conductivity type encompassing the external shape of a region to be the cantilevered beam in the upper layer: a step of forming a strain detecting means on the substrate; a step of providing a mask on the lower surface of the semiconductor substrate; a step of immersing the substrate with a cathode into etching solution in a condition that a voltage is applied between the electrode and the cathode to carry out an electrochemical etching.
Claim 2
Independent Claim
137 words
A method of manufacture for semiconductor accelerometer with a cantilevered beam comprising: a step of providing an upper layer of a first conductivity type on a semiconductor substrate of a second conductivity type opposite to the first conductivity type; a step of providing an electrode in ohmic contact with the upper layer; a step of forming a patterned region of the second conductivity type encompassing the external shape of a region to be the cantilevered beam in the upper layer: a step of forming a strain detecting means on the substrate; a step of providing a mask on the lower surface of the semiconductor substrate; a step of immersing the substrate with a cathode into etching solution in a condition that a voltage is applied between the electrode and the cathode to carry out an electrochemical etching.
Claim 3
Dependent Claim
12 words
A method of claim 1, wherein, said substrate is made of silicon.
Claim 4
Dependent Claim
13 words
A method of claim 2, wherein, said upper layer is an epitaxial layer.
Claim 5
Dependent Claim
13 words
A method of claim 2, wherein, the etching solution is ethylene diamine series.
Claim 6
Dependent Claim
14 words
A method of claim 2, wherein, the etching solution is a strong alkali solution.
Claim 7
Dependent Claim
27 words
A method of claim 2, wherein, prior to the electrochemical etching an upper weight is formed on the upper surface of the region to be the weight.
References Cited (Backward Citations)
No citation records indexed.
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