US4975390A
Expired / Lapsed
US
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Method of fabricating a semiconductor pressure sensor
Assignee: Denso Corp
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Filing: 1987-12-08
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Granted: 1990-12-04
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Expires: 2007-12-08
Abstract
Abstract Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.
Inventors
- 👤 Tetsuo Fujii
- 👤 Susumu Kuroyanagi
- 👤 Akira Kuroyanagi
- 👤 Tomohiro Funahashi
- 👤 Minekazu Sakai
- 👤 Shinji Yoshihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:08
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0055; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
211 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface other than said first main surface of the first substrate to the recess formed in the first main surface, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping with an impurity from a main surface of a second semiconductor substrate to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on the main surface of the second substrate; (e) bonding the first main surface of the first substrate with the diaphragm layer of the second substrate so that the piezoresistive layer is positioned at least partially over the recess; and (f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.
Claim 2
Independent Claim
211 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface other than said first main surface of the first substrate to the recess formed in the first main surface, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping with an impurity from a main surface of a second semiconductor substrate to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on the main surface of the second substrate; (e) bonding the first main surface of the first substrate with the diaphragm layer of the second substrate so that the piezoresistive layer is positioned at least partially over the recess; and (f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein the step of forming a diaphragm layer comprises the step of forming an insulating layer.
Claim 4
Dependent Claim
47 words
A method according to claim 1, wherein in the step of etching away a portion of the second substrate comprises the step of etching away a portion of the second substrate to leave only the diaphragm layer to act as a diaphragm, along with the piezoresistive layer.
Claim 5
Dependent Claim
30 words
A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole which has a diameter smaller than that of the recess.
Claim 6
Dependent Claim
116 words
A method according to claim 4, wherein the step of forming a recess comprises the step of forming a recess having a diameter in a range of from 40 to 100 μm and a depth in a range of from 10 to 40 μm in a first substrate having a thickness in a range of from 400 to 500 μm, wherein the step of forming a through-hole comprises the step of forming a through hole having a diameter in the range of from 20 to 50 μm, and wherein the step of forming a diaphragm layer comprises the step of forming a diaphragm layer having a thickness in a range of from 1 to 5 μm.
Claim 7
Dependent Claim
29 words
A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole in a direction oblique to the second main surface.
Claim 8
Dependent Claim
34 words
A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole at different angles from said first and second main surfaces of said first substrate.
Claim 9
Dependent Claim
20 words
A method according to claim 1, further comprising the steps of forming a plurality of through-holes other than said through-hole.
Claim 10
Dependent Claim
48 words
A method according to claim 1, wherein the step of forming a through-hole comprises the steps of forming a hole midway through said first substrate to form a first portion and removing said first portion at a final stage of a wafer forming step to form the through-hole.
Claim 11
Dependent Claim
32 words
A method according to claim 1, wherein the step of forming a through-hole by removing said left portion includes the step of forming a through-hole using oblique illumination by a laser beam.
Claim 12
Dependent Claim
25 words
A method according to claim 1, wherein the step of forming a through-hole further comprises the step of forming a through-hole with a laser beam.
Claim 13
Dependent Claim
24 words
A method according to claim 1, wherein the step of forming a through-hole comprises the step of forming a through-hole with an anisotropic etching.
Claim 14
Independent Claim
201 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface of the first substrate to the recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping a second substrate of a semiconductor material with an impurity to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on a main surface of the substrate of the semiconductor; (e) bonding the first main surface of the first substrate to the diaphragm layer, so that the piezoresistive layer is positioned at least partially over the recess; and (f) etching away at least a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, to leave the piezoresistive layer on the diaphragm layer.
Claim 15
Independent Claim
201 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface of the first substrate to the recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping a second substrate of a semiconductor material with an impurity to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on a main surface of the substrate of the semiconductor; (e) bonding the first main surface of the first substrate to the diaphragm layer, so that the piezoresistive layer is positioned at least partially over the recess; and (f) etching away at least a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, to leave the piezoresistive layer on the diaphragm layer.
Claim 16
Independent Claim
222 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface of the first substrate to the recess, said through-hole having a smaller diameter than said recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping a second substrate of a semiconductor material with an impurity from a main surface of the second substrate of the semiconductor, to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on the main surface of the second substrate; (e) bonding the first main surface of the first substrate to the diaphragm layer formed on the main surface of the second substrate, so that the piezoresistive element is positioned at least partially over the recess; and (f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.
Claim 17
Independent Claim
222 words
A method of fabricating a semiconductor pressure sensor, comprising the steps of: (a) forming a recess in a first main surface of a first substrate; (b) forming a through-hole extending from a second main surface of the first substrate to the recess, said through-hole having a smaller diameter than said recess, wherein the step of forming a through-hole comprises a first portion removing step of forming a hole partway through said first substrate to form a partial hole with a first portion remaining, and a second portion removing step of removing said first portion at a final stage of a wafer forming step to form the through-hole; (c) doping a second substrate of a semiconductor material with an impurity from a main surface of the second substrate of the semiconductor, to form a piezoresistive layer in a predetermined region of the second substrate; (d) forming a diaphragm layer on the main surface of the second substrate; (e) bonding the first main surface of the first substrate to the diaphragm layer formed on the main surface of the second substrate, so that the piezoresistive element is positioned at least partially over the recess; and (f) etching away a portion of the second substrate to leave at least the diaphragm layer to act as a diaphragm of the sensor, along with the piezoresistive layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-03 | 1994-06-04 | 1994-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-03 | 1998-06-04 | 1998-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-03 | 2002-06-04 | 2002-12-04 | $7700.00 | Window Closed / Lapsed |