Production of semiconductor pressure transducing element

Abstract

Abstract PURPOSE: To obtain diaphragms of thin thickness with good reproducibility and high accuracy be bonding a Si substrate which is beforehand opened with windows to a Si wafer which becomes diaphragm part and polishing the diaphragm part to thin. CONSTITUTION: Regions 12 for P + type electrode contact are diffusion-formed in the specified regions of an N type Si substrate 11 and openings are made in the SiO 2 film 15 having been formed at this time, through which P type strain gauge regions 13 and P type lead regions 14 connecting to the regions 12 are respectively diffused. Next, the openings of the film 15 are covered and the glass powder mixed in alcohol is coated over the entire surface of this film 15, thence a fired glass layer 16 is formed. On the other hand, separately with this, a Si substrate 17 having a window 19 in its central part is prepared, and a SiO 2 film 18 is deposited on its surface. Thereafter, this film 18 and the previous glass layer 16 are superposed and heated to bond these. The glass layer 16 having exposed in the windows 19 is etched away. Next, the substrate 11 is polished and thinned from the surface until the regions 12 expose, after which the broken layer of the surface is removed. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Josuke Nakada

Bibliographic Details