Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture

Claim 2

A thin layer forming method comprising: a first step of forming, on a substrate, a silicon oxide layer containing at least one substance selected from the group consisting of boron, phosphorus and arsenic by chemical vapor deposition; a second step of forming a first molecular layer for preventing said substance from absorbing moisture which comprises molecules having hydrophobic groups, on the surface of said silicon oxide layer formed at said first step; a third step of thermally heating said silicon oxide layer on the surface of which said first molecular layer has been formed at said second step; a fourth step of forming a second molecular layer comprising molecules having hydrophobic groups, on the surface of said silicon oxide layer as thermally treated at said third step; and a fifth step of forming a thin layer on said silicon oxide layer on the surface of which said second molecular layer has been formed at said fourth step wherein said second step is carried out before precipitates are generated on the surface of said silicon oxide layer formed at said first step.

Claim 3

A thin layer forming method according to claim 1, wherein: the second step is adapted to supply a material containing hydrophobic groups bonded with silicon or germanium, onto the silicon oxide layer formed at the first step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer, thus forming, on the surface of said silicon oxide layer, the first molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said first molecular layer preventing moisture from entering said silicon oxide layer; and the fourth step is adapted to supply a material containing hydrophobic groups bonded with silicon or germanium, onto said silicon oxide layer as thermally treated at said third step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer as thermally treated, thus forming, on the surface of said silicon oxide layer, the second molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said second molecular layer preventing moisture from entering said silicon oxide layer.

Claim 4

A semiconductor device producing method comprising: a first step of forming, on a semiconductor substrate having a transistor zone, a silicon oxide layer containing at least one substance selected from the group consisting of boron, phosphorus and arsenic by chemical vapor deposition; a second step of supplying a material containing hydrophobic groups bonded with silicon or germanium, onto said silicon oxide layer formed at said first step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer, thus forming, on the surface of said silicon oxide layer, a first molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said first molecular layer preventing moisture from entering said silicon oxide layer; a third step of thermally treating said silicon oxide layer on the surface of which said first molecular layer has been formed at said second step; a fourth step of supplying a material containing hydrophobic groups bonded with silicon or germanium, onto said silicon oxide layer as thermally treated at said third step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer as thermally treated, thus forming, on the surface of said silicon oxide layer, a second molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said second molecular layer preventing moisture from entering said silicon oxide layer; and a fifth step of forming a wiring layer, directly on or through an insulating layer, on said silicon oxide layer on the surface of which said second molecular layer has been formed at said fourth step wherein said second step is carried out before precipitates are generated on the surface of said silicon oxide layer formed at said first step.

Claim 5

A semiconductor device producing method comprising: a first step of forming, on a semiconductor substrate having a transistor zone, a silicon oxide layer containing at least one substance selected from the group consisting of boron, phosphorus and arsenic by chemical vapor deposition; a second step of supplying a material containing hydrophobic groups bonded with silicon or germanium, onto said silicon oxide layer formed at said first step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer, thus forming, on the surface of said silicon oxide layer, a first molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said first molecular layer preventing moisture from entering said silicon oxide layer; a third step of thermally treating said silicon oxide layer on the surface of which said first molecular layer has been formed at said second step; a fourth step of supplying a material containing hydrophobic groups bonded with silicon or germanium, onto said silicon oxide layer as thermally treated at said third step, so that said hydrophobic groups are bonded with oxygen of said silicon oxide layer as thermally treated, thus forming, on the surface of said silicon oxide layer, a second molecular layer comprising molecules having said hydrophobic groups, said hydrophobic groups of said molecules of said second molecular layer preventing moisture from entering said silicon oxide layer; and a fifth step of forming a wiring layer, directly on or through an insulating layer, on said silicon oxide layer on the surface of which said second molecular layer has been formed at said fourth step wherein said second step is carried out before precipitates are generated on the surface of said silicon oxide layer formed at said first step.