Semiconductor device

Abstract

Abstract PURPOSE:To provide a semiconductor device which maintains excellent damp- proof performance under strong temperature stress, by forming a first passivation film into a passivation film having compressive stress in the specific temperature range in the semiconductor device in which a wiring layer and the first passivation film and a second passivation film are formed on a semiconductor substrate. CONSTITUTION:A passivation film 4 made of a material having compressive stress in a specific temperature range, for example, in the normal temperature range -65 deg.C to+150 deg.C of a device is the following film: firstly a phosphorus- containing silicon oxidizing film formed by a reduced vapor growth method, secondly a silicon oxidizing film formed by a sputtering growth method, thirdly a silicon oxy-nitride (SiON) film formed by a plasma vapor growth method, and the like. Hence, even if temperature stress is applied to this semiconductor device, cracks due to deformation of a wiring layer and the passivation film can be prevented from being generated, excellent damp-proof performance of the device can be maintained.

Inventors

• 👤 Hideto Goto
• 👤 秀人 後藤
• 👤 Toshiyuki Sakuma
• 👤 敏幸 佐久間

Bibliographic Details