US5571743A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making buried-sidewall-strap two transistor one capacitor trench cell
Assignee: International Business Machines Corp
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Filing: 1994-08-26
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Granted: 1996-11-05
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Expires: 2014-08-26
Abstract
Abstract A two transistor one capacitor DRAM cell configured with respect to a bit line pair and a single word line in which the gates of the two transistors are connected to the single word line and one of the source/drains of each transistor is connected to a respective electrode of the capacitor and the other of the source/drains of the transistors is connected to a respective bit line of a complementary bit line pair. The storage capacitor is a three dimensional structure with both electrodes being electrically well isolated from electrodes of all other cell storage capacitors. A stacked in trench cell fabrication design is disclosed having a buried strap for connecting the outer electrode to a diffusion region of one transistor and a surface strap for connecting the inner electrode to a diffusion region of the second access transistor.
Inventors
- 👤 Walter H. Henkels
- 👤 Wei Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:19
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
225 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a deep trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode, said first contact being formed by forming a shallow trench adjacent the deep trench; forming an insulating layer on each side wall of said shallow trench; and forming a layer of conductive material in said shallow trench in which a portion of said conductive material contacts said outer electrode; and forming a second contact for electrically connecting the source or drain region of said second field effect transistor to said inner electrode.
Claim 2
Independent Claim
225 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a deep trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode, said first contact being formed by forming a shallow trench adjacent the deep trench; forming an insulating layer on each side wall of said shallow trench; and forming a layer of conductive material in said shallow trench in which a portion of said conductive material contacts said outer electrode; and forming a second contact for electrically connecting the source or drain region of said second field effect transistor to said inner electrode.
Claim 3
Dependent Claim
75 words
The method of claim 1 wherein the step of forming the layer of conductive material in said shallow trench includes: filling said shallow trench with said conductive material; reusing said conductive material to form a bottom layer; forming an insulating collar on sidewalls of said shallow trench; removing the collar on the sidewall abutting the outer electrode; and re-filling said shallow trench with said conductive material such that said conductive material contacts said outer electrode.
Claim 4
Dependent Claim
47 words
The method of claim 1 wherein the step of forming said second contact includes forming an insulating collar surrounding an upper portion of said inner electrode and depositing a surface layer of conductive material connecting said upper portion to the source or drain of said second transistor.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein said conductive material is one of polysilicon or amorphous silicon.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said first and second insulating layers are oxide.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein said first insulating layer is oxide and second insulating layer is a composite layer of oxide and nitride.
Claim 8
Independent Claim
257 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a deep trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode, the step of forming said first contact including forming a buried sidewall strap by forming one portion of the sidewall of said shallow trench contiguous with said outer electrode and a second portion of the sidewall of said shallow trench contiguous with the source or drain region of said first field effect transistor and filling said shallow trench with conductive material to provide a direct connection between said outer electrode and said source or drain of said first field effect transistor; and forming a second contact for electrically connecting the source or drain region of said second field effect transistor to said inner electrode.
Claim 9
Independent Claim
257 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a deep trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode, the step of forming said first contact including forming a buried sidewall strap by forming one portion of the sidewall of said shallow trench contiguous with said outer electrode and a second portion of the sidewall of said shallow trench contiguous with the source or drain region of said first field effect transistor and filling said shallow trench with conductive material to provide a direct connection between said outer electrode and said source or drain of said first field effect transistor; and forming a second contact for electrically connecting the source or drain region of said second field effect transistor to said inner electrode.
Claim 10
Independent Claim
180 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode; and forming a second contact by forming a surface strap for electrically connecting the source and drain region of said second field effect transistor to said inner electrode.
Claim 11
Independent Claim
180 words
A method of forming a two transistor one capacitor dynamic random access memory cell comprising: forming a trench in a semiconductor substrate of a first conductivity type; forming a first insulating layer on each sidewall of said trench; depositing a layer of conductive material of a second conductivity type on said first insulating layer to form an outer electrode of said capacitor; forming a second insulating layer on said outer electrode; filling a portion of said trench which is above said second insulating layer with conductive material of said second conductivity type to form an inner electrode of said capacitor; forming source, drain and gate regions of a first field effect transistor on said substrate; forming source, drain and gate regions of a second field effect transistor on said substrate; forming a first contact for electrically connecting the source or drain region of said first field effect transistor to said outer electrode; and forming a second contact by forming a surface strap for electrically connecting the source and drain region of said second field effect transistor to said inner electrode.
References Cited (Backward Citations)
US4103342A
Cited
US4792834A
Cited
US5006910A
Cited
JPS61207058A
Cited
US4801989A
Cited
US4833094A
Cited
JPS63232458A
Cited
US4816884A
Cited
US5041887A
Cited
US5089868A
Cited
US4978634A
Cited
JPH03276758A
Cited
US5107459A
Cited
EP0503199A2
Cited
EP0514679A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-05 | 2000-05-06 | 2000-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-05 | 2004-05-06 | 2004-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-05 | 2008-05-06 | 2008-11-05 | $7700.00 | Window Closed / Lapsed |