US5041887A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1990-05-14
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Granted: 1991-08-20
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Expires: 2010-05-14
Abstract
Abstract In one-transistor.one-capacitor type dynamic memory cell, cell capacitor with a reduced junction leakage current comprises a MOS capacitor which is provided between a semiconductor substrate and a charge storage electrode disposed at a side wall of a trench through a first insulating film, and a stacked capacitor which is provided between the charge storage electrode and a capacitor plate electrode formed on a second insulating film covering the entire surface of the charge storage electrode. The equivalent silicon dioxide thickness of the first insulating film is thicker than that of the second insulating film, and the storage capacitance of the cell capacitor is rendered by a sum of the capacitance of the MOS capacitor and the capacitance of the stacked capacitor because these capacitors are electrically connected in parallel with each other.
Inventors
- 👤 Jumpei Kumagai
- 👤 Shizuo Sawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:26
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0156
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
174 words
A semiconductor memory device including dynamic memory cells each being comprised of one transistor having source and drain regions and one cell capacitor, said transistor being provided in an opposite conductivity type well region formed in one conductivity type semiconductor substrate, said cell capacitor comprising: a trench provided in said semiconductor substrate through said well region; a first insulating film formed on an inner wall of said trench; a charge storage electrode disposed on said first insulating film, said charge storage electrode being electrically connected to one of said source and drain regions through only one upper end thereof; a second insulating film provided on said charge storage electrode, an equivalent silicon dioxide thickness of said first insulating film being thicker than that of said second insulating film to reduce an unwanted junction leakage current, said first and second insulating films being arranged to cover said charge storage electrode except said upper end; and a capacitor plate electrode disposed on said second insulating film, said capacitor plate electrode being insulated from said semiconductor substrate.
Claim 2
Dependent Claim
174 words
A semiconductor memory device including dynamic memory cells each being comprised of one transistor having source and drain regions and one cell capacitor, said transistor being provided in an opposite conductivity type well region formed in one conductivity type semiconductor substrate, said cell capacitor comprising: a trench provided in said semiconductor substrate through said well region; a first insulating film formed on an inner wall of said trench; a charge storage electrode disposed on said first insulating film, said charge storage electrode being electrically connected to one of said source and drain regions through only one upper end thereof; a second insulating film provided on said charge storage electrode, an equivalent silicon dioxide thickness of said first insulating film being thicker than that of said second insulating film to reduce an unwanted junction leakage current, said first and second insulating films being arranged to cover said charge storage electrode except said upper end; and a capacitor plate electrode disposed on said second insulating film, said capacitor plate electrode being insulated from said semiconductor substrate.
Claim 3
Dependent Claim
49 words
The semiconductor memory device according to claim 1, wherein said cell capacitor includes a MOS capacitor provided by said semiconductor substrate, said first insulating film and said charge storage electrode, and a stacked capacitor rendered by said charge storage electrode, said second insulating film and said capacitor plate electrode.
Claim 4
Dependent Claim
46 words
The semiconductor memory device according to claim 1, wherein said first insulating film is composed of a material selected from an SiO 2 , an Si 3 N 4 , a Ta 2 O 3 , and a Y 2 O 3 or a composite thereof.
Claim 5
Dependent Claim
46 words
The semiconductor memory device according to claim 1, wherein said second insulating film is composed of a material selected from an SiO 2 , an Si 3 N 4 , a Ta 2 O 3 , and a Y 2 O 3 of a composite thereof.
Claim 6
Dependent Claim
23 words
The semiconductor memory device according to claim 2, wherein the capacitance of said MOS capacitor is lower than that of said stacked capacitor.
Claim 7
Dependent Claim
24 words
The semiconductor memory device according to claim 2, wherein said MOS capacitor and said stacked capacitor are equivalently connected in parallel with each other.
Claim 8
Dependent Claim
47 words
The semiconductor memory device according to claim 1, wherein said one conductivity type semiconductor substrate comprises one conductivity type epitaxial layer with a comparatively low impurity concentration grown on one conductivity type semiconductor substrate having an impurity concentration of 1×10 18 to 1×10 21 cm -3 .
Claim 9
Dependent Claim
37 words
The semiconductor memory device according to claim 1, wherein said one conductivity type semiconductor substrate comprises only one semiconductor substrate of one conductivity type having an impurity concentration of 1×10 15 to 1×10 18 cm -3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |