Abstract An EPROM disclosed in this specification includes a unique floating gate memory cell which may be charged using a reduced voltage level. The memory cells are fabricated using a mask to define the buried source, drain, and field oxide regions of the memory cell. After removal of the mask, field oxide regions are formed and a floating gate is fabricated which extends beyond the boundaries of the channel region for the floating gate field effect transistor memory cell. This extended floating gate provides additional capacitive coupling between the gate/word line and the floating gate while maintaining the same capacitive coupling between the floating gate and the channel of the floating gate field effect transistor memory cell. One embodiment discloses a silicide which is applied to the buried source and drain regions. The silicide is fabricated by forming a slot through the field oxide, forming a silicide on the diffused regions, refilling the slot with an oxide, and planarizing the resulting structure.
Inventors
👤 James L. Paterson
👤 Gregory J. Armstrong
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-31 15:02
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
A method for forming an electrically programmable memory cell on a substrate having a semiconductor surface area of a first conductivity type, said method comprising the steps of: applying a mask on the surface of said substrate; applying dopant ions of a second conductivity type to said substrate in areas of said substrate not covered by said mask; removing said mask; forming field insulator regions above said ions; forming a floating gate overlying said substrate surface partially over said field insulator regions; forming an interlevel insulator on a surface of said floating gate; forming an active gate on a surface of said interlevel insulator so that a capacitance exists between said active gate and said floating gate; removing a portion of each of said field insulator regions to form field insulator region slots; and forming a conductive region on said substrate surface within said slots.
Claim 2
Independent Claim
145 words
A method for forming an electrically programmable memory cell on a substrate having a semiconductor surface area of a first conductivity type, said method comprising the steps of: applying a mask on the surface of said substrate; applying dopant ions of a second conductivity type to said substrate in areas of said substrate not covered by said mask; removing said mask; forming field insulator regions above said ions; forming a floating gate overlying said substrate surface partially over said field insulator regions; forming an interlevel insulator on a surface of said floating gate; forming an active gate on a surface of said interlevel insulator so that a capacitance exists between said active gate and said floating gate; removing a portion of each of said field insulator regions to form field insulator region slots; and forming a conductive region on said substrate surface within said slots.
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1 wherein said forming a conductive region step comprises the step of applying a refractory metal to said substrate surface within said slots.
Claim 4
Dependent Claim
23 words
A method as claimed in claim 1 additionally comprising the step of forming an insulating region overlying said conductive region in said slots.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 1 wherein said forming a floating gate step comprises the step of extending said floating gate to overlie portions of said slots.