US4373248A
Expired / Lapsed
US
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Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
Assignee: Texas Instruments Inc
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Filing: 1980-01-07
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Granted: 1983-02-15
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Expires: 2000-01-07
Abstract
Abstract An improved method of making a semiconductor device such as an N-channel, double level poly, MOS read only memory or ROM array is provided; the array is of very dense structure and may be electrically programmable by floating gates which are interposed between the gate oxide and control gates formed by polycrystalline silicon or metal row address lines. The electrical programming of the cells is accomplished by applying selected voltages to the source, drain, control gate and substrate. The very dense array results from a simplified manufacturing process generally compatible with standard N-channel silicon gate technology. Parallel strips of gate oxide, polycrystalline silicon, and nitride (functioning as an oxidation mask) are created in one mask step before field oxide is grown, then a perpendicular pattern of conductive strips is etched using a second mask step.
Inventors
- 👤 David J. McElroy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:12
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0491; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10P; H10P76/00; H10P76/40; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; H10W20/00; H10W20/01; H10W20/40
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
134 words
A method of making an electrically programmable floating gate nonvolatile semiconductor memory in the form of an array of rows and columns of memory cells, comprising the steps of: applying successive coatings of oxide, polycrystalline silicon and an oxidation mask to a face of a silicon body; patterning said coating of oxidation mask to provide a plurality of parallel strips; oxidizing the face of the silicon body to produce field oxide in the areas between said parallel strips of oxidation mask, the field oxide being thicker than said oxide coating; depositing a second conductive layer on said face insulated therefrom by an oxide coating; patterning said layer to provide a second plurality of parallel strips; said second plurality of parallel strips providing row lines and being perpendicular to elongated column lines in the face.
Claim 2
Independent Claim
134 words
A method of making an electrically programmable floating gate nonvolatile semiconductor memory in the form of an array of rows and columns of memory cells, comprising the steps of: applying successive coatings of oxide, polycrystalline silicon and an oxidation mask to a face of a silicon body; patterning said coating of oxidation mask to provide a plurality of parallel strips; oxidizing the face of the silicon body to produce field oxide in the areas between said parallel strips of oxidation mask, the field oxide being thicker than said oxide coating; depositing a second conductive layer on said face insulated therefrom by an oxide coating; patterning said layer to provide a second plurality of parallel strips; said second plurality of parallel strips providing row lines and being perpendicular to elongated column lines in the face.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein the oxidation mask is silicon nitride.
Claim 4
Dependent Claim
26 words
A method according to claim 1 wherein prior to growing field oxide an impurity is introduced into said face between the parallel strips of oxidation mask.
Claim 5
Dependent Claim
31 words
A method according to claim 2 including the step of forming column lines by introducing impurity by an implant step, and the impruity is of opposite type from the silicon body.
Claim 6
Dependent Claim
26 words
A method according to claim 2 wherein the silicon nitride acts as an oxidation mask during the step of oxidizing the face of the silicon body.
Claim 7
Dependent Claim
23 words
A method according to claim 4 wherein the silicon nitride is removed before the second conductive layer is provided overlying the insulating coating.
Claim 8
Independent Claim
89 words
A method of making a semiconductor device comprising the steps of: applying coatings of insulator material, conductive material, and oxidation mask overlying one another on a face of a semiconductor body; patterning said coating of oxidation mask to provide a first plurality of parallel strips; oxidizing the face of the body to produce insulating oxide in the areas between the first parallel strips; adding another conductive layer on said face insulated therefrom; patterning said coatings in a second plurality of parallel strips extending across heavily-doped regions in said face.
Claim 9
Independent Claim
89 words
A method of making a semiconductor device comprising the steps of: applying coatings of insulator material, conductive material, and oxidation mask overlying one another on a face of a semiconductor body; patterning said coating of oxidation mask to provide a first plurality of parallel strips; oxidizing the face of the body to produce insulating oxide in the areas between the first parallel strips; adding another conductive layer on said face insulated therefrom; patterning said coatings in a second plurality of parallel strips extending across heavily-doped regions in said face.
Claim 10
Dependent Claim
27 words
A method according to claim 7 wherein the semiconductor body is silicon, the insulator material is silicon oxide, and the conductive material is heavily doped polycrystalline silicon.
Claim 11
Dependent Claim
32 words
A method according to claim 7 wherein, prior to said step of oxidizing said face, impurity is introduced into said face, resulting in conductive columns in said face beneath the insulating oxide.
Claim 12
Dependent Claim
20 words
A method according to claim 8 wherein the semiconductor body is predominantly P-type and the impurity material produces N-type regions.
Claim 13
Independent Claim
157 words
A method of making a semiconductor memory comprising the steps of: (a) applying overlying coatings of thin gate oxide, polycrystalline silicon, and silicon nitride to a face of a wafer of semiconductor material, and masking said face of the wafer to cover a plurality of generally parallel rows of the coatings adjacent one another; (b) etching the coating of silicon nitride between said rows; (c) forming an insulating oxide coating on said face in the areas between the rows not covered by masking; and forming columns by heavily doped regions in said face produced by introducing an impurity; (d) coating the face of the wafer with a second layer of conductive material over oxide insulator; (e) defining by masking and etching a plurality of generally parallel rows of said layer of conductive material on the face above the oxide insulator, the rows being perpendicular to the columns and overlying the remainder of the coating of polycrystalline silicon.
Claim 14
Independent Claim
157 words
A method of making a semiconductor memory comprising the steps of: (a) applying overlying coatings of thin gate oxide, polycrystalline silicon, and silicon nitride to a face of a wafer of semiconductor material, and masking said face of the wafer to cover a plurality of generally parallel rows of the coatings adjacent one another; (b) etching the coating of silicon nitride between said rows; (c) forming an insulating oxide coating on said face in the areas between the rows not covered by masking; and forming columns by heavily doped regions in said face produced by introducing an impurity; (d) coating the face of the wafer with a second layer of conductive material over oxide insulator; (e) defining by masking and etching a plurality of generally parallel rows of said layer of conductive material on the face above the oxide insulator, the rows being perpendicular to the columns and overlying the remainder of the coating of polycrystalline silicon.
Claim 15
Dependent Claim
39 words
A method according to claim 11, wherein the polycrystalline silicon is heavily doped to render it conductive, the semiconductor material is P-type silicon, the heavily doped regions are N-type, and the oxide coating is formed by oxidizing the silicon.
Claim 16
Dependent Claim
15 words
A method according to claim 12, wherein the heavily doped regions are formed by implant.
Claim 17
Dependent Claim
34 words
A method according to claim 13, wherein the first mentioned coating of polycrystalline silicon provides floating gates and said conductive material is polycrystalline silicon which provides the control gates of electrically programmable MOS transistors.
Claim 18
Dependent Claim
19 words
A method according to claim 14, wherein the thin gate oxide is much thinner than the thick field oxide.
Claim 19
Independent Claim
78 words
A method of making a semiconductor device comprising the steps of: applying successive coatings of insulator material and conductive material overlying one another on a face of a semiconductor body, followed by a coating of oxidation masking material; patterning said coating of oxidation masking material to provide a first plurality of areas; growing field oxide into regions of said face between said areas; applying another layer of conductive material on said face insulated therefrom; and patterning said layer.
Claim 20
Independent Claim
78 words
A method of making a semiconductor device comprising the steps of: applying successive coatings of insulator material and conductive material overlying one another on a face of a semiconductor body, followed by a coating of oxidation masking material; patterning said coating of oxidation masking material to provide a first plurality of areas; growing field oxide into regions of said face between said areas; applying another layer of conductive material on said face insulated therefrom; and patterning said layer.
Claim 21
Dependent Claim
23 words
A method according to claim 16 wherein said areas and regions define elongated parallel strips and said layer is patterned in elongated strips.
Claim 22
Dependent Claim
21 words
A method according to claim 16 including the step of introducing impurity with said regions prior to forming said insulating coating.
Claim 23
Dependent Claim
23 words
A method according to claim 17 wherein an insulator coating much thicker than said coating of insulator material is formed over said regions.
Claim 24
Independent Claim
213 words
A method of making a semiconductor memory in the form of an array of rows and columns of memory cells, each memory cell including a transistor and a capacitor, the transistor of each cell having a source-to-drain path and a gate, the capacitor of each cell having an upper electrode and a semiconductor region, comprising the steps of: applying successive coatings of oxide, polycrystalline silicon and an oxidation mask to a face of a silicon body; patterning said coatings to provide a plurality of parallel strips which will provide the upper electrodes of the capacitors; selectively implanting impurity into said face in part of the area between the strips to produce elongated heavily-doped regions to become column lines; oxidizing the face of the silicon body to produce field oxide in the areas between said parallel strips with heavily-doped regions beneath said part of the field oxide to provide said column lines; removing part of said coatings in each cell to uncover the source-to-drain path of each transistor; depositing a second conductive layer on said face insulated therefrom by an oxide coating; patterning said layer to provide a second plurality of parallel strips normal to the original parallel strips; said second plurality of parallel strips providing the gates of the transistors and row lines.
Claim 25
Independent Claim
213 words
A method of making a semiconductor memory in the form of an array of rows and columns of memory cells, each memory cell including a transistor and a capacitor, the transistor of each cell having a source-to-drain path and a gate, the capacitor of each cell having an upper electrode and a semiconductor region, comprising the steps of: applying successive coatings of oxide, polycrystalline silicon and an oxidation mask to a face of a silicon body; patterning said coatings to provide a plurality of parallel strips which will provide the upper electrodes of the capacitors; selectively implanting impurity into said face in part of the area between the strips to produce elongated heavily-doped regions to become column lines; oxidizing the face of the silicon body to produce field oxide in the areas between said parallel strips with heavily-doped regions beneath said part of the field oxide to provide said column lines; removing part of said coatings in each cell to uncover the source-to-drain path of each transistor; depositing a second conductive layer on said face insulated therefrom by an oxide coating; patterning said layer to provide a second plurality of parallel strips normal to the original parallel strips; said second plurality of parallel strips providing the gates of the transistors and row lines.
Claim 26
Dependent Claim
30 words
A method according to claim 20 wherein the oxidation mask is silicon nitride which acts as an oxidation mask during the step of oxidizing the face of the silicon body.
Claim 27
Dependent Claim
36 words
A method according to claim 20 including the step of ion implanting impurity after patterning said second conductive layer to raise the threshold of the surface of said face between said second plurality of parallel strips.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |