US4142926A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligning double polycrystalline silicon etching process
Assignee: Intel Corp
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Filing: 1978-06-12
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Granted: 1979-03-06
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Expires: 1998-06-12
Abstract
Abstract A process for fabricating a double layer polycrystalline silicon structure for a metal-oxide-semiconductor (MOS) integrated circuit. The upper polycrystalline silicon layer after being etched to form a predetermined pattern is used as a masking member for etching the lower polycrystalline silicon layer, thereby assuring alignment between the layers. A selective etchant which discriminates between the silicon layers is employed.
Inventors
- 👤 William L. Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:25
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/48; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/686; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/141; Y10S148/147
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
152 words
A process for fabricating an MOS, double polycrystalline integrated circuit structure at a predetermined area of a silicon substrate comprising the steps of: forming a continuous first silicon oxide layer on said substrate covering at least said area; forming a doped first polycrystalline silicon layer on said first oxide layer such that said first silicon layer is insulated from said substrate at said area; forming a second oxide layer on said doped first silicon layer; forming a second polycrystalline silicon layer on said second oxide layer; etching said second slicon layer and said second oxide layer above said area to form a structure having a predetermined pattern; subjecting said doped first silicon layer and said structure to an etchant which discriminates between said doped first silicon layer and said second silicon layer employing said structure as a mask; whereby a double polycrystalline silicon structure is formed on said substrate at said area.
Claim 2
Dependent Claim
152 words
A process for fabricating an MOS, double polycrystalline integrated circuit structure at a predetermined area of a silicon substrate comprising the steps of: forming a continuous first silicon oxide layer on said substrate covering at least said area; forming a doped first polycrystalline silicon layer on said first oxide layer such that said first silicon layer is insulated from said substrate at said area; forming a second oxide layer on said doped first silicon layer; forming a second polycrystalline silicon layer on said second oxide layer; etching said second slicon layer and said second oxide layer above said area to form a structure having a predetermined pattern; subjecting said doped first silicon layer and said structure to an etchant which discriminates between said doped first silicon layer and said second silicon layer employing said structure as a mask; whereby a double polycrystalline silicon structure is formed on said substrate at said area.
Claim 3
Dependent Claim
17 words
The process defined by claim 1 wherein said doped first polycrystalline silicon layer is doped with phosphorus.
Claim 4
Dependent Claim
18 words
The process defined by claim 1 wherein said first silicon layer is between 4,500 and 6,000A in thickness.
Claim 5
Dependent Claim
19 words
The process defined by claim 3 wherein said first silicon oxide layer is between 500 and 1,000A in thickness.
Claim 6
Dependent Claim
17 words
The process defined by claim 1 wherein said etchant comprises hydrofluoric acid, nitric acid and acetic acid.
Claim 7
Dependent Claim
162 words
A process for fabricating an MOS double polycrystalline silicon integrated circuit structure at a predetermined area on a silicon substrate comprising the steps of: forming a continuous first silicon oxide layer on said substrate covering at least said area; forming a first polycrystalline silicon layer on said first oxide layer such that said first silicon layer is insulated from said substrate at said area; forming a second oxide layer on said first polycrystalline silicon layer; forming a doped second polycrystalline silicon layer on said insulative layer; etching said doped second polycrystalline silicon layer and said second oxide layer above said area to form a structure having a predetermined pattern; subjecting said first silicon layer and said structure to an etchant which discriminates between said doped second silicon layer and said first silicon layer so as to etch only said second silicon layer employing said structure as a mask; whereby a double polycrystalline silicon structure is formed on said substrate at said area.
Claim 8
Dependent Claim
162 words
A process for fabricating an MOS double polycrystalline silicon integrated circuit structure at a predetermined area on a silicon substrate comprising the steps of: forming a continuous first silicon oxide layer on said substrate covering at least said area; forming a first polycrystalline silicon layer on said first oxide layer such that said first silicon layer is insulated from said substrate at said area; forming a second oxide layer on said first polycrystalline silicon layer; forming a doped second polycrystalline silicon layer on said insulative layer; etching said doped second polycrystalline silicon layer and said second oxide layer above said area to form a structure having a predetermined pattern; subjecting said first silicon layer and said structure to an etchant which discriminates between said doped second silicon layer and said first silicon layer so as to etch only said second silicon layer employing said structure as a mask; whereby a double polycrystalline silicon structure is formed on said substrate at said area.
Claim 9
Dependent Claim
17 words
The process defined by claim 6 wherein said doped second polycrystalline silicon layer is doped with boron.
Claim 10
Dependent Claim
12 words
The process defined by claim 7 wherein said etchant comprises hot KOH.
Claim 11
Dependent Claim
188 words
A process for fabricating an MOS floating gate memory device at a predetermined area on a silicon substrate, said substrate including a first continuous silicon oxide layer covering at least said area and a first polycrystalline silicon layer disposed on said first silicon oxide layer such that said first polycrystalline silicon layer is insulated from said substrate at said area comprising the steps of: doping a said first polycrystalline silicon layer; forming a second oxide layer on said first silicon layer; forming a second silicon layer on said second oxide layer; fabricating a gate masking member at said area on said second silicon layer; etching said second silicon layer to form an upper gate; removing exposed portions of said second oxide layer; and, subjecting said first and second silicon layers to an etchant which discriminates between said doped first silicon layer and said second silicon layer so as to etch only said first silicon layer to form a lower gate; whereby said upper gate acts as a mask during the etching of said lower gate, thereby assuring that said lower gate is in alignment with said upper gate.
Claim 12
Dependent Claim
188 words
A process for fabricating an MOS floating gate memory device at a predetermined area on a silicon substrate, said substrate including a first continuous silicon oxide layer covering at least said area and a first polycrystalline silicon layer disposed on said first silicon oxide layer such that said first polycrystalline silicon layer is insulated from said substrate at said area comprising the steps of: doping a said first polycrystalline silicon layer; forming a second oxide layer on said first silicon layer; forming a second silicon layer on said second oxide layer; fabricating a gate masking member at said area on said second silicon layer; etching said second silicon layer to form an upper gate; removing exposed portions of said second oxide layer; and, subjecting said first and second silicon layers to an etchant which discriminates between said doped first silicon layer and said second silicon layer so as to etch only said first silicon layer to form a lower gate; whereby said upper gate acts as a mask during the etching of said lower gate, thereby assuring that said lower gate is in alignment with said upper gate.
Claim 13
Dependent Claim
22 words
The process defined by claim 9 including the formation of a source and drain region in said substrate adjacent to said gates.
Claim 14
Dependent Claim
20 words
The process defined by claim 10 wherein the dopant employed for said doping of said first silicon layer comprises phosphorus.
Claim 15
Dependent Claim
15 words
The process defined by claim 11 wherein said source and drain regions comprise n-type regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |