Patent US5558722A successfully refreshed from Google Patents.
US5558722A
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US
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Plasma processing apparatus
Assignee: Panasonic Holdings Corp
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Filing: 1995-09-14
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Granted: 1996-09-24
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Expires: 2015-09-14
Abstract
Abstract A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
Inventors
- 👤 Tomohiro Okumura
- 👤 Ichiro Nakayama
- 👤 Yoshihiro Yanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:31
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
88 words
A plasma processing apparatus comprising: a vacuum vessel; a substrate electrode; a discharge coil which is partially or wholly made to have a multiple spiral configuration; a high frequency power source; and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
Claim 2
Dependent Claim
88 words
A plasma processing apparatus comprising: a vacuum vessel; a substrate electrode; a discharge coil which is partially or wholly made to have a multiple spiral configuration; a high frequency power source; and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
Claim 3
Dependent Claim
27 words
The plasma processing apparatus as claimed in claim 1, wherein the multiple spiral configuration of the discharge coil is symmetrical with a center of the discharge coil.
Claim 4
Dependent Claim
27 words
The plasma processing apparatus as claimed in claim 1, wherein the multiple spiral configuration of the discharge coil is nonsymmetrical with a center of the discharge coil.
Claim 5
Dependent Claim
42 words
The plasma processing apparatus as claimed in claim 1, wherein the discharge coil is so structured that an imaginary number component of a complex representation of an impedance thereof is not greater than five times a characteristic impedance of the connection cable.
Claim 6
Dependent Claim
52 words
The plasma processing apparatus as claimed in claim 1, wherein the discharge coil is so constructed that a distance between adjacent conductive wires constructing the discharge coil on a center side of the discharge coil is larger than that between adjacent conductive wires thereof on a peripheral side of the discharge coil.
Claim 7
Dependent Claim
20 words
The plasm processing apparatus as claimed in claim 1, wherein the discharge coil has a bell-shaped configuration in three dimensions.
Claim 8
Dependent Claim
88 words
A plasma processing apparatus comprising: a vacuum vessel; a substrate electrode; a discharge coil which is partially or wholly made to have a multiple helical configuration; a high frequency power source; and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
Claim 9
Dependent Claim
88 words
A plasma processing apparatus comprising: a vacuum vessel; a substrate electrode; a discharge coil which is partially or wholly made to have a multiple helical configuration; a high frequency power source; and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
Claim 10
Dependent Claim
42 words
The plasma processing apparatus as claimed in claim 7, wherein the discharge coil is so structured that an imaginary number component of a complex representation of an impedance thereof is not greater than five times a characteristic impedance of the connection cable.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-24 | 2000-03-25 | 2000-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-24 | 2004-03-25 | 2004-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-24 | 2008-03-25 | 2008-09-24 | $7700.00 | Window Closed / Lapsed |