Abstract There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle theta between the wiring pattern and the substrate is equals 60 DEG or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6</=Tn2/Tn1.
An electronic device producing method for forming an electronic device provided with a conductive wiring pattern formed on a surface of a substrate, at least said surface being electrically insulated, and an insulating film mainly composed of silicon and nitrogen and deposited to cover said substrate and said wiring pattern partly or wholly, wherein a target for depositing said insulating film in sputtering includes at least silicon, an atmospheric gas for the sputtering is a mixture of at least a rare element gas, a hydrogen gas, and a nitrogen gas or an ammonia gas, the partial pressures of said rare gas element gas and said hydrogen gas are respectively 0.20 Pa to 0.40 Pa and 0.02 Pa to 0.15 Pa.
Claim 2
Dependent Claim
120 words
An electronic device producing method for forming an electronic device provided with a conductive wiring pattern formed on a surface of a substrate, at least said surface being electrically insulated, and an insulating film mainly composed of silicon and nitrogen and deposited to cover said substrate and said wiring pattern partly or wholly, wherein a target for depositing said insulating film in sputtering includes at least silicon, an atmospheric gas for the sputtering is a mixture of at least a rare element gas, a hydrogen gas, and a nitrogen gas or an ammonia gas, the partial pressures of said rare gas element gas and said hydrogen gas are respectively 0.20 Pa to 0.40 Pa and 0.02 Pa to 0.15 Pa.
Claim 3
Dependent Claim
16 words
An electronic device producing method according to claim 1, wherein said rare gas element is argon.