Patent US1989339A successfully refreshed from Google Patents.
US4948482A
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Method for forming silicon nitride film
Assignee: Hoya Corp
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Filing: 1988-12-21
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Granted: 1990-08-14
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Expires: 2008-12-21
Abstract
Abstract Silicon nitride films are formed by controlling the internal stress more precisely than conventional methods without varying its optical properties, mechanical strength, composition and density. The film is formed by sputtering, using an inert gas or a mixture of an inert gas and nitrogen, onto a substrate while keeping the substrate temperature within a given temperature range according to the pressure of the sputtering gas or gas mixture, the two being interrelated, thus carefully and precisely controlling the internal stress of the film formed.
Inventors
- 👤 Masato Kobayashi
- 👤 Yoichi Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:40
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0652
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
91 words
A method for forming a silicon nitride film which comprises depositing a silicon nitride film having a preselected amount of internal stress on a substrate by a sputtering method using, as a sputtering gas, an inert gas or a mixed gas of an inert gas and nitrogen gas, said method further comprising, during the deposition of said silicon nitride film, keeping the substrate temperature at a given temperature range according to the pressure of the sputtering gas to control the internal stress of the film formed substantially to said preselected amount.
Claim 2
Independent Claim
91 words
A method for forming a silicon nitride film which comprises depositing a silicon nitride film having a preselected amount of internal stress on a substrate by a sputtering method using, as a sputtering gas, an inert gas or a mixed gas of an inert gas and nitrogen gas, said method further comprising, during the deposition of said silicon nitride film, keeping the substrate temperature at a given temperature range according to the pressure of the sputtering gas to control the internal stress of the film formed substantially to said preselected amount.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein the substrate temperature is kept in the range of about 100° C. to 400° C. when the pressure of the sputtering gas is less than 1.0 Pa.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein the pressure of the sputtering gas is 0.5 Pa or its vicinity.
Claim 5
Dependent Claim
74 words
A method according to claim 2, wherein the range of the substrate temperature is about 100° C. to about 290° C. in the case of the pressure of sputtering gas of 0.5 Pa, about 340° C. to about 380° C. in the case of the pressure of the sputtering gas of 0.6 Pa and about 100° C. to about 170° C. in the case of the pressure of the sputtering gas of 0.8 Pa.
Claim 6
Dependent Claim
33 words
A method according to claim 4, wherein the substrate temperature is in the range of 200° C. to 290° C. in the case of the pressure of the sputtering gas of 0.5 Pa.
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said substrate is a Si substrate or a SiO 2 substrate.
Claim 8
Independent Claim
108 words
A method of forming a silicon nitride film on an Si or SiO 2 substrate and carefully controlling the internal stress of the silicon nitride film so formed to a preselected value, comprising sputtering, using an inert gas or a mixture of an inert gas and nitrogen gas, as the sputtering gas, wherein during sputtering, while the silicon nitride film is being formed, maintaining the substrate at a temperature in the range of about 100° C. to 400° C. and the pressure of the sputtering gas less than 1.0 Pa and thereby controlling the internal stress of the silicon nitride film thus formed substantially to said preselected value.
Claim 9
Independent Claim
108 words
A method of forming a silicon nitride film on an Si or SiO 2 substrate and carefully controlling the internal stress of the silicon nitride film so formed to a preselected value, comprising sputtering, using an inert gas or a mixture of an inert gas and nitrogen gas, as the sputtering gas, wherein during sputtering, while the silicon nitride film is being formed, maintaining the substrate at a temperature in the range of about 100° C. to 400° C. and the pressure of the sputtering gas less than 1.0 Pa and thereby controlling the internal stress of the silicon nitride film thus formed substantially to said preselected value.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
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