Manufacture of semiconductor integrated circuit

Abstract

Abstract PURPOSE:To form a silicon nitride film containing no impurities such as hydrogen and the like, to prevent the deterioration in characteristics of the device, namely, the deterioration in gm, and VT caused by hot electrons, and to prevent the lowering in the high resistance value of polysilicon by a method wherein the vapor deposition of Si and the implantation of N<+> of N2 ions are preformed simultaneously on the passivation film of a semiconductor integrated circuit within the same vacuum device. CONSTITUTION:A sample 40 is arranged in a vacuum chamber 50 opposing to a vapor deposition source 30, and the sample 40 is heated up to 200-400 deg.C. The N<+> or N<+>2 ions generated by an ion source 10 are brought in contact with the sample 40 at the accelerated voltage of 5-20keV and at the beam current of 10-100mA in the vacuum chamber 50 which is brought into the state of 10<-6>Torr or less by a vacuum pump system 20, and at the same time, Si is vapor-deposited at the speed of 50-200Angstrom /min. by performing an electron beam vapor deposition method. Through these procedures, a silicon nitride film containing no hydrogen can be formed at a low temperature.

Inventors

• 👤 Hiroshi Matsui
• 👤 宏 松井
• 👤 Shintaro Ushio
• 👤 牛尾　真太郎

Bibliographic Details