Semiconductor device

Abstract

Abstract PURPOSE:To enhance the bond properties between the first wiring layer and a conductor buried in a contact hole by a method wherein a conductor to be buried in a contact hole is composed of a body-centered cubic lattice while the ratio between the peak intensity of face (200) and the other peak intensity of face (110) obtained by X-ray diffraction is specified to exceed a specific value. CONSTITUTION:A conductor 17 buried in a contact hole 15 made in an insulating layer 14 for connecting to the first wiring layer 13 is composed of a body- centered cubic lattice while the ratio I200/I110 between the peak intensity I200 of face (200) and the other peak intensity I110 of face (110) obtained by X-ray diffraction is specified to exceed 0.2. The reason why the conductor 17 is formed of e.g. a tungsten, etc., in the body-centered cubic lattice structure while the peak intensity ratio I200/I110 obtained by the X-ray diffraction of the conductor 17 is restricted is because if the ratio is specified not to exceed 0.2, the inner stress of the conductor 17 itself can not be sufficiently decreased. Through these procedures, the bond properties between the first layer 13 and the conductor 17 buried in the contact hole 15 can be enhanced thereby enabling the first wiring layer 13 and the second wiring layer 18 to be firmly connected.

Inventors

• 👤 Yoko Takeuchi
• 👤 竹内　曜子
• 👤 Takayuki Endo
• 👤 隆之 遠藤
• 👤 Renpei Nakada
• 👤 錬平 中田
• 👤 Hirofumi Omori
• 👤 大森　廣文

Bibliographic Details