EP0570928A1
Expired / Lapsed
EP
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Method of manufacturing thin film transistor panel
Assignee: Casio Computer Co Ltd
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Filing: 1993-05-18
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Granted: —
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Expires: 2013-05-18
Abstract
Abstract A thin-film transistor panel is constituted by forming, on an insulating substrate (101), a plurality of thin-film transistors (102), a plurality of gate lines (GL) for each connecting gate electrodes (G) of the thin-film transistors by plural number, and a plurality of pixel electrodes (107) formed of a transparent conductive film connected to the thin-film transistors, then forming a low-resistance metal film of an Aℓ or Aℓ alloy for a data line (DL) and a surface metal film of Cr with a high density, forming a photoresist film (113) of a predetermined pattern on the surface metal film, and etching the data line metal film and surface metal film. Then, the surface metal film remaining on the data line metal film is eliminated.
Inventors
- 👤 Naohiro Konya
- 👤 Makoto Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10D; H10D86/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G02F1/136259; G02F1/136263; Y; Y10; Y10S; Y10S148/00; Y10S148/105
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
172 words
A method of manufacturing a TFT panel comprising: a first step of forming, on an insulating substrate (101), a plurality of thin-film transistors (102), a plurality of gate lines (GL) for each connecting gate electrodes (G) of said thin-film transistors by plural number, and a plurality of pixel electrodes (107) formed of a transparent conductive film connected to said thin-film transistors; a second step of forming a first metal film (11) with a low resistance and a second metal film (112) with a high density in such a way as to cover said plurality of thin-film transistors and said plurality of pixel electrodes formed in said first step; a third step of forming a photoresist film (113; 115a, 115b) on said second metal film formed in said second step, and exposing and developing said photoresist to form a resist pattern of a predetermined shape; and a fourth step of etching said first metal film and second metal film formed in said second step, with said resist pattern formed in said third step.
Claim 2
Dependent Claim
29 words
The method according to claim 1, characterized in that said first metal film is formed of aluminum or aluminum alloy, and said second metal film is formed of chromium.
Claim 3
Dependent Claim
49 words
The method according to claim 1, characterized in that said fourth step includes a step of etching said first metal film and said second metal film into predetermined patterns to form a data line (DL) for connecting drain electrodes of said plurality of thin-film transistors by a plural number.
Claim 4
Dependent Claim
39 words
The method according to claim 1, characterized by further comprising a fifth step of eliminating said second metal film, one of said first and second metal films etched into the pattern of a data line in said fourth step.
Claim 5
Dependent Claim
60 words
The method according to claim 4, characterized in that said fifth step includes: a substep of forming a resist film to cover at least source electrodes (S) and drain electrodes (D) other than said second metal film etched into the pattern of a data line in said fourth step; and a step of eliminating said second metal film by etching.
Claim 6
Dependent Claim
122 words
The method according to claim 4, characterized in that said third step includes a step of forming a resist pattern on source electrodes and drain electrodes and into the pattern of a data line; said fourth step includes a step of etching said first metal film and said second metal film according to said resist pattern formed in said third step to allow said first and second metal films on said source and drain electrodes of said plurality of thin-film transistors and to form a data line for connecting said drain electrodes by a plural number; and said fifth step includes a step of eliminating said second metal film, one of said first and second metal films remaining in said fourth step.
References Cited (Backward Citations)
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