Patent US5550007A successfully refreshed from Google Patents.
US5550007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface-imaging technique for lithographic processes for device fabrication
Assignee: Nokia of America Corp
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Filing: 1993-05-28
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Granted: 1996-08-27
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Expires: 2013-05-28
Abstract
Abstract A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.
Inventors
- 👤 Gary N. Taylor
- 👤 David R. Wheeler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/075; G03F7/0754; G03F7/26; G03F7/265; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
176 words
A process for manufacturing a device comprising: depositing an imaging layer comprising a polymeric resist material on a substrate; exposing a portion of the imaging layer to radiation, thereby forming an exposed region and an unexposed region that together define an image of a pattern in the imaging layer; introducing into the imaging layer a refractory material comprising an organodisilane that is selectively permeable into one of either the exposed region or the unexposed region of the imaging layer, the refractory material characterized by the formula: ##STR3## wherein R X is a reactive group that reacts with a functional group pendant to the polymeric resist material, the reaction producing a reactive site on the polymeric resist material with which the remaining portion of the refractory material, --SiR A R B SiR C R D R E , reacts and groups R.sub.(A-E) are all selected from the group consisting of H and alkyl wherein R.sub.(A-E) are the same or different and wherein at least two of R.sub.(A-E) are alkyl; and developing the pattern in the imaging layer.
Claim 2
Dependent Claim
176 words
A process for manufacturing a device comprising: depositing an imaging layer comprising a polymeric resist material on a substrate; exposing a portion of the imaging layer to radiation, thereby forming an exposed region and an unexposed region that together define an image of a pattern in the imaging layer; introducing into the imaging layer a refractory material comprising an organodisilane that is selectively permeable into one of either the exposed region or the unexposed region of the imaging layer, the refractory material characterized by the formula: ##STR3## wherein R X is a reactive group that reacts with a functional group pendant to the polymeric resist material, the reaction producing a reactive site on the polymeric resist material with which the remaining portion of the refractory material, --SiR A R B SiR C R D R E , reacts and groups R.sub.(A-E) are all selected from the group consisting of H and alkyl wherein R.sub.(A-E) are the same or different and wherein at least two of R.sub.(A-E) are alkyl; and developing the pattern in the imaging layer.
Claim 3
Dependent Claim
21 words
The process of claim 1 further comprising depositing a planarizing layer onto the substrate prior to depositing the imaging layer thereon.
Claim 4
Dependent Claim
33 words
The process of claim 2 wherein the planarizing layer so deposited absorbs radiation of the same wavelength as the wavelength of the radiation to which a portion of the imaging layer is exposed.
Claim 5
Dependent Claim
18 words
The process of claim 2 wherein the planarizing layer so deposited is not substantially permeable by the organodisilane.
Claim 6
Dependent Claim
32 words
The process according to claim 1 wherein the polymeric resist material in the exposed region has pendant functional groups that are susceptible to reaction in significant amounts with the R X group.
Claim 7
Dependent Claim
32 words
The process according to claim 1 wherein the polymeric resist material in the unexposed region has pendant functional groups that are susceptible to reaction in significant amounts with the R X group.
Claim 8
Dependent Claim
28 words
The process according to claim 1 wherein R X is selected from the group consisting of N,N-dimethylamino, N-methylamino, N,N-diethylamino, N-ethylamino, azido, fluoro, chloro, bromo, iodo, cyano and thiocyano.
Claim 9
Dependent Claim
19 words
The process of claim 1 wherein the alkyl groups are selected from the group consisting of ethyl and methyl.
Claim 10
Dependent Claim
12 words
The process of claim 1 wherein the alkyl groups are methyl groups.
Claim 11
Dependent Claim
22 words
The process of claim 1 wherein the image is developed by oxygen plasma etching in a plasma that comprises an oxygen species.
Claim 12
Dependent Claim
23 words
The process of claim 1 wherein the radiation which is used to expose the imaging layer has a wavelength in the ultraviolet range.
Claim 13
Dependent Claim
23 words
The process of claim 1 wherein the radiation which is used to expose the imaging layer has a wavelength in the x-ray range.
Claim 14
Dependent Claim
208 words
A process for manufacturing a device comprising: obtaining a substrate; depositing a planarizing layer comprising a polymeric resist material substrate; depositing an imaging layer comprising a polymeric resist material with pendant functional groups on the planarizing layer; exposing a portion of the imaging layer to radiation, thereby forming an exposed region and an unexposed region that together define an image of a pattern in the imaging layer; introducing into the imaging layer a refractory material comprising an organodisilane that is selectively permeable into one of either the exposed region or the unexposed region of the imaging layer, the refractory material characterized by the formula: ##STR4## wherein R X is a reactive group that selectively reacts with the functional groups pendant to the polymeric resist material in one of either the exposed region or the unexposed region of the imaging layer, the reaction producing a reactive site with which the remaining portion of the refractory material, SiR A R B SiR C R D R E , reacts, and groups R.sub.(A-E) are all selected from the group consisting of H and CH 3 wherein R.sub.(A-E) are the same of different and wherein at least two of R.sub.(A-E) are CH 3 ; and developing the pattern in the imaging layer.
Claim 15
Dependent Claim
208 words
A process for manufacturing a device comprising: obtaining a substrate; depositing a planarizing layer comprising a polymeric resist material substrate; depositing an imaging layer comprising a polymeric resist material with pendant functional groups on the planarizing layer; exposing a portion of the imaging layer to radiation, thereby forming an exposed region and an unexposed region that together define an image of a pattern in the imaging layer; introducing into the imaging layer a refractory material comprising an organodisilane that is selectively permeable into one of either the exposed region or the unexposed region of the imaging layer, the refractory material characterized by the formula: ##STR4## wherein R X is a reactive group that selectively reacts with the functional groups pendant to the polymeric resist material in one of either the exposed region or the unexposed region of the imaging layer, the reaction producing a reactive site with which the remaining portion of the refractory material, SiR A R B SiR C R D R E , reacts, and groups R.sub.(A-E) are all selected from the group consisting of H and CH 3 wherein R.sub.(A-E) are the same of different and wherein at least two of R.sub.(A-E) are CH 3 ; and developing the pattern in the imaging layer.
Claim 16
Dependent Claim
30 words
The process according to claim 13 wherein the polymeric resist material in the exposed region has pendant functional groups that are susceptible to reaction in significant amounts with the organodisilane.
Claim 17
Dependent Claim
30 words
The process according to claim 13 wherein the polymeric resist material in the unexposed region has pendant functional groups that are susceptible to reaction in significant amounts with the organodisilane.
Claim 18
Dependent Claim
28 words
The process according to claim 13 wherein R 1 is selected from the group consisting of N,N-dimethylamino, N-methylamino, N,N-diethylamino, N-ethylamino, azido, fluoro, chloro, bromo, iodo, cyano, and thiocyano.
Claim 19
Dependent Claim
20 words
The process of claim 13 wherein the image is developed by etching in a plasma that comprises an oxygen species.
References Cited (Backward Citations)
US4552833A
Cited
US4551418A
Cited
US4657845A
Cited
US5116715A
Cited
US5094936A
Cited
US4957588A
Cited
US5139925A
Cited
US5085729A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |