US4957588A
Expired / Lapsed
US
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Method for high temperature reaction process
Assignee: UCB SA
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Filing: 1989-11-16
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Granted: 1990-09-18
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Expires: 2009-11-16
Abstract
Abstract A method for high temperature reaction process, including the steps of mounting a substrate on which a radiation-sensitive polymer film is formed on a lower heating plate in a reaction vessel, sealing the reaction vessel while positioning an upper heating plate to above the substrate, maintaining a temperature difference between temperatures of the lower heating plate and the upper heating plate within a predetermined range, and supplying a reactive compound into the reaction vessel.
Inventors
- 👤 Mitsunobu Koshiba
- 👤 Yoshiyuki Harita
- 👤 Yuuji Furuto
- 👤 Bruno Roland
- 👤 Ria Lombaerts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:19
CPC Classifications
C; C08; C08J; C08J7/00; C08J7/12; C08J7/16; C08J7/18; G; G03; G03F; G03F7/00; G03F7/26; G03F7/265; G03F7/38
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
111 words
In a method for high temperature reaction process for the treatment of a polymer film on a substrate with a reactive compound, using a reaction vessel capable of being tightly sealed and equipped with an upper heating plate positioned above said substrate, and a lower heating plate positioned below said substrate, both heating plates being designed to heat said substrate, said method for high temperature reaction process being performed with a temperature difference between a temperature TU° C. of said upper heating plate and a temperature TL° C. of said lower heating plate being maintained so that TU° C. falls in the range of (TL-70) to (TL-30) °C. during the treatment.
Claim 2
Dependent Claim
111 words
In a method for high temperature reaction process for the treatment of a polymer film on a substrate with a reactive compound, using a reaction vessel capable of being tightly sealed and equipped with an upper heating plate positioned above said substrate, and a lower heating plate positioned below said substrate, both heating plates being designed to heat said substrate, said method for high temperature reaction process being performed with a temperature difference between a temperature TU° C. of said upper heating plate and a temperature TL° C. of said lower heating plate being maintained so that TU° C. falls in the range of (TL-70) to (TL-30) °C. during the treatment.
Claim 3
Dependent Claim
30 words
The method according to claim 1 wherein the distance beween said upper heating plate and said substrate is larger than the distance between said lower heating plate and said substrate.
Claim 4
Dependent Claim
17 words
The method according to claim 1 wherein said lower heating plate is in contact with said substrate.
Claim 5
Dependent Claim
22 words
The method according to claim 1 wherein the distance between said upper heating plate and said substrate is 10 to 25 mm.
Claim 6
Dependent Claim
24 words
The method according to claim 1 wherein said upper and lower heating plates are made of any one of aluminum, stainless steel and hastelloy.
Claim 7
Dependent Claim
21 words
The method according to claim 1 wherein the temperature TL° C. of said lower heating plate is 70° to 250° C.
Claim 8
Dependent Claim
21 words
The method according to claim 1 wherein the temperature TU° C. of said upper heating plate is 40° to 160° C.
Claim 9
Dependent Claim
28 words
The method according to claim 1 wherein said reactive compound is introduced into said reaction vessel together with an inert carrier gas heated at 40° to 80° C.
Claim 10
Dependent Claim
24 words
The method according to claim 1 wherein said reactive compound is introduced into a reaction vessel by means of a plurality of small holes.
Claim 11
Dependent Claim
24 words
The method according to claim 1 wherein said polymer film is a radiation-sensitive resin composite comprising an alkali-soluble resin and a quinone diazide resin.
Claim 12
Dependent Claim
27 words
The method according to claim 1 wherein said reactive compound is any one of silicon compounds consisting of hexamethyl disilasane, N-trimethylsilylacetamide, N,O-bis(trimethylsilyl)acetoamide, vinyltrichlorosilane, methyltrichlorosilane, phenyltrichlorosilane, and methyltrichlorosilane.
Claim 13
Independent Claim
95 words
A method for high temperature reaction process for the treatment of a polymer film on a substrate with a reactive compound within a reaction vessel comprising the steps of; mounting said substrate on a lower heating plate in said reaction vessel, sealing said reaction vessel while positioning an upper heating plate in said reaction vessel to above said substrate, maintaining a temperature of said lower heating plate at TL° C. while maintaining a temperature TU° C. of said upper heating plate at (TL-70) °C. to (TL-30) °C., supplying said reactive compound into said reaction vessel.
Claim 14
Independent Claim
95 words
A method for high temperature reaction process for the treatment of a polymer film on a substrate with a reactive compound within a reaction vessel comprising the steps of; mounting said substrate on a lower heating plate in said reaction vessel, sealing said reaction vessel while positioning an upper heating plate in said reaction vessel to above said substrate, maintaining a temperature of said lower heating plate at TL° C. while maintaining a temperature TU° C. of said upper heating plate at (TL-70) °C. to (TL-30) °C., supplying said reactive compound into said reaction vessel.
Claim 15
Dependent Claim
31 words
The method according to claim 12 further comprising the step of; preheating said substrate at predetermined temperature before mounting said substrate on a said lower heating plate in said reaction vessel.
References Cited (Backward Citations)
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