US5094936A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High pressure photoresist silylation process and apparatus
Assignee: Texas Instruments Inc
•
Filing: 1990-06-26
•
Granted: 1992-03-10
•
Expires: 2010-06-26
Abstract
Abstract A process for silylation of positive or negative photosensitive resist layer on a semiconductor wafer after the resist layer has been exposed to radiant energy through a mask which includes introducing a silylating agent to the wafer at high pressure over 760 torr and, usually, at temperatures less than 180° C. Increased pressure increases the rate of silylation, allows practical use of lower process temperatures, and, therefore, allows better process control. Also an apparatus is disclosed for applying the high pressure silylation process to a wafer.
Inventors
- 👤 George R. Misium
- 👤 Cesar M. Garza
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:25
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/265
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
109 words
A process for patterning a photoresist layer on a semiconductor wafer substrate, comprising: (a) selectively exposing portions of said photoresist layer to radiant energy; (b) then exposing said radiation exposed photoresist layer to a silicon-containing material in gas form, at a temperature above ambient but no greater than about 160° C., and at a pressure between 800 and 2000 Torr, for a time sufficient to cause silylation of only the surface portion of the radiation exposed photoresist; and (c) then treating the radiation exposed and silylated photoresist layer with a plasma etchant, to develop a pattern by removing those portions of said photoresist layer which have not been silylated.
Claim 2
Dependent Claim
109 words
A process for patterning a photoresist layer on a semiconductor wafer substrate, comprising: (a) selectively exposing portions of said photoresist layer to radiant energy; (b) then exposing said radiation exposed photoresist layer to a silicon-containing material in gas form, at a temperature above ambient but no greater than about 160° C., and at a pressure between 800 and 2000 Torr, for a time sufficient to cause silylation of only the surface portion of the radiation exposed photoresist; and (c) then treating the radiation exposed and silylated photoresist layer with a plasma etchant, to develop a pattern by removing those portions of said photoresist layer which have not been silylated.
Claim 3
Dependent Claim
18 words
A process as in claim 1 wherein said photoresist layer comprises a phenolic polymer and a photosensitive resin.
Claim 4
Dependent Claim
12 words
A process as in claim 1 wherein said silicon-containing material comprises hexamethyldisiazane.
Claim 5
Dependent Claim
21 words
A process as in claim 1 wherein the pressure is maintained by adding a pressurized intert gas with the silicon-containing material.
Claim 6
Dependent Claim
12 words
A process as in claim 1 wherein said plasma etchant comprises oxygen.
References Cited (Backward Citations)
US4232110A
Cited
US4396704A
Cited
US4500628A
Cited
US4552833A
Cited
EP0184567A1
Cited
US4810601A
Cited
US4613398A
Cited
US4768291A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |