US4396704A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state devices produced by organometallic plasma developed resists
Assignee: AT&T Inc
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Filing: 1981-04-22
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Granted: 1983-08-02
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Expires: 2001-04-22
Abstract
Abstract Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.
Inventors
- 👤 Gary N. Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/36; C; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/0803; C07F7/081; C07F7/18; C07F7/1804; G03F7/004; G03F7/075; G03F7/0755; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
158 words
In a method of producing a solid state device including at least one pattern delineation step by steps comprising: (a) selectively irradiating a resist film on a substrate with actinic radiation, wherein said film comprises a polymer and at least one type of monomer that is locked in said polymer by said irradiating; (b) treating said film to reduce the amount of unlocked monomer or monomers in the unirradiated portion of said film; and (c) developing said film in a plasma comprising oxygen, thereby removing the unirradiated portion of the film at a faster rate than the irradiated portion due to the presence of said at least one type of monomer locked in said polymer, thereby producing a negative resist pattern, the invention characterized in that said at least one type of monomer includes at least one type of nonsilicon-containing organometallic monomer that forms a nonvolatile oxide in the irradiated portion of the film during said developing step.
Claim 2
Dependent Claim
158 words
In a method of producing a solid state device including at least one pattern delineation step by steps comprising: (a) selectively irradiating a resist film on a substrate with actinic radiation, wherein said film comprises a polymer and at least one type of monomer that is locked in said polymer by said irradiating; (b) treating said film to reduce the amount of unlocked monomer or monomers in the unirradiated portion of said film; and (c) developing said film in a plasma comprising oxygen, thereby removing the unirradiated portion of the film at a faster rate than the irradiated portion due to the presence of said at least one type of monomer locked in said polymer, thereby producing a negative resist pattern, the invention characterized in that said at least one type of monomer includes at least one type of nonsilicon-containing organometallic monomer that forms a nonvolatile oxide in the irradiated portion of the film during said developing step.
Claim 3
Dependent Claim
31 words
The method of claim 1 further characterized in that said at least one type of nonsilicon-containing organometallic monomer contains a metal selected from the group consisting of iron, germanium, and tin.
Claim 4
Dependent Claim
20 words
The method of claim 1 further characterized in that said at least one type of nonsilicon-containing organometallic monomer is diphenyldivinyltin.
Claim 5
Dependent Claim
27 words
The method of claim 1 further characterized in that said plasma further comprises at least one halocarbon species so that cracking of said film is substantially eliminated.
Claim 6
Dependent Claim
33 words
The method of claim 1 further characterized in that an electrical bias is applied to said substrate relative to the source of said plasma, whereby said developing is accomplished by reactive ion etching.
Claim 7
Dependent Claim
21 words
The method of claim 1 further characterized in that said polymer is poly(2,3-dichloro-1-propyl acrylate), or poly(2,3-dibromo-1-propyl acrylate), or a copolymer thereof.
Claim 8
Dependent Claim
28 words
The method of claim 1 further characterized in that said resist film further comprises a sensitizer to enhance the sensitivity of said resist to ultraviolet or visible radiation.
Claim 9
Dependent Claim
38 words
The method of claim 1 further characterized in that said polymer is a rubbery polymer, and said film comprises at least one organometallic monomer type having a molecular weight in the range of 200 grams/mole to 800 grams/mole.
Claim 10
Dependent Claim
15 words
The method of claim 1 further characterized in that said polymer is a glassy polymer.
Claim 11
Dependent Claim
12 words
A solid state device produced according to the method of claim 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |