Patent US3385276A successfully refreshed from Google Patents.
Patent US5549935A successfully refreshed from Google Patents.
US5549935A
Expired / Lapsed
US
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Adhesion promotion of fluorocarbon films
Assignee: International Business Machines Corp
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Filing: 1995-01-04
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Granted: 1996-08-27
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Expires: 2015-01-04
Abstract
Abstract The adhesion between a polymeric fluorocarbon film and a substrate is improved by providing a thin layer of silicon or a silicide intermediate between the substrate and the polymeric fluorocarbon film, such that a region containing a high density of Si-C bonds is formed.
Inventors
- 👤 Thao N. Nguyen
- 👤 Gottlieb S. Oehrlein
- 👤 Zeev A. Weinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:55
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/62; B05D5/00; B05D5/08; B05D5/083
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
180 words
A method for adhering a polymeric fluorocarbon film to a substrate which comprises providing a thin layer of silicon or a silicide having a thickness of up to about 50 nanometers on said substrate; placing said substrate and a working electrode in a chamber having walls, wherein said chamber can be evacuated and wherein the walls of said chamber and the electrode are coated with a polymeric fluorocarbon coating and wherein the electrode is capacitively coupled; introducing in said chamber a gaseous polymerizable fluorocarbon; applying radio-frequency at a power level of about 100 watts to about 1000 watts to said electrode; to thereby deposit a polymeric fluorocarbon film on said layer of silicon or silicide while maintaining pressure in said chamber of about 10 to about 180 mTorr and a self-bias voltage on said electrode of about -50 to about -700 volts, and whereby said thin layer is intermediate said substrate and said polymeric fluorocarbon film and silicon-carbon bonds are formed between said thin layer and said fluorocarbon film for promoting the adhesion between said fluorocarbon film and said substrate.
Claim 2
Independent Claim
180 words
A method for adhering a polymeric fluorocarbon film to a substrate which comprises providing a thin layer of silicon or a silicide having a thickness of up to about 50 nanometers on said substrate; placing said substrate and a working electrode in a chamber having walls, wherein said chamber can be evacuated and wherein the walls of said chamber and the electrode are coated with a polymeric fluorocarbon coating and wherein the electrode is capacitively coupled; introducing in said chamber a gaseous polymerizable fluorocarbon; applying radio-frequency at a power level of about 100 watts to about 1000 watts to said electrode; to thereby deposit a polymeric fluorocarbon film on said layer of silicon or silicide while maintaining pressure in said chamber of about 10 to about 180 mTorr and a self-bias voltage on said electrode of about -50 to about -700 volts, and whereby said thin layer is intermediate said substrate and said polymeric fluorocarbon film and silicon-carbon bonds are formed between said thin layer and said fluorocarbon film for promoting the adhesion between said fluorocarbon film and said substrate.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the substrate is a silicon-containing compound or a silicide-forming metal.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said substrate is silicon oxide or silicon nitride.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein said substrate is a metal capable of forming a silicide and said thin layer is a silicide.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein the substrate is a silicon-containing compound and said thin layer is a thin layer of silicon that is provided by ion bombardment of the substrate.
Claim 7
Dependent Claim
13 words
The method of claim 5 wherein ion bombardment is from an argon plasma.
Claim 8
Dependent Claim
14 words
The method of claim 6 which comprises providing said argon plasma in said chamber.
Claim 9
Dependent Claim
32 words
The method of claim 7 wherein said argon has a flow rate of about 20 to about 150 sccm and said argon plasma is applied for about 5 to about 30 minutes.
Claim 10
Dependent Claim
52 words
The method of claim 8 wherein treatment with said argon plasma employs a treatment pressure of about 26 mTorr, said argon flow rate of about 100 sccm for a time of about 10 minutes, and said radio frequency is applied at a treatment power level of about 100 to about 400 watts.
Claim 11
Dependent Claim
37 words
The method of claim 9 wherein said polymeric fluorocarbon film has a dielectric constant to about 1.9 to about 2.3, a F/C ratio of about 1:1 to about 1.8:1, and has less than about 0.5% oxygen contamination.
Claim 12
Dependent Claim
49 words
The method of claim 7 which further includes subsequent to the argon plasma treatment, flowing a mixture of argon and gaseous polymerizable fluorocarbon for about 1 minute to about 5 minutes into the chamber, followed by introducing the gaseous fluorocarbon into the chamber and ceasing the argon gas flow.
Claim 13
Dependent Claim
16 words
The method of claim 11 wherein the gaseous polymerizable fluorocarbon is C 2 F 4 .
Claim 14
Dependent Claim
16 words
The method of claim 12 wherein the self-bias voltage is about -500 to about -700 volts.
Claim 15
Dependent Claim
19 words
The method of claim 1 wherein said fluorocarbon film has a thickness of about 0.01 to about 5 microns.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the layer of silicon or silicide is about 2 to about 10 nanometers thick.
Claim 17
Dependent Claim
46 words
The method of claim 1 wherein said polymeric fluorocarbon film is about 0.02 to about 5 microns thick, has a maximum dielectric constant of about 2.5, is stable at temperatures of at least about 350° C., has a F/C ratio of about 1:1 to about 3:1.
Claim 18
Dependent Claim
18 words
The method of claim 1 wherein said polymeric fluorocarbon film is about 0.1 to about 1 micron thick.
Claim 19
Dependent Claim
16 words
The method of claim 1 wherein the radio frequency is about 1 to about 100 megahertz.
Claim 20
Dependent Claim
18 words
The method of claim 1 wherein said polymeric fluorocarbon film provides a dielectric layer in an integrated circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |