US4762803A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming crystalline films by glow discharge
Assignee: Fuji Electric Co Ltd
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Filing: 1985-12-06
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Granted: 1988-08-09
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Expires: 2005-12-06
Abstract
Abstract Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.
Inventors
- 👤 Noritada Sato
- 👤 Yasukazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3454; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
78 words
A method for crystallizing an amorphous silicon film on a substrate comprising in sequence the steps of: (a) placing the substrate and amorphous silicon film into a vacuum chamber; (b) introducing an inert gas into the vacuum chamber to form an atmosphere consisting essentially of the inert gas within the vacuum chamber; and (c) genereating a glow discharge within the inert gas atmosphere in the vacuum chamber whereby the amorphous silicon is converted to a crystalline silicon film.
Claim 2
Independent Claim
78 words
A method for crystallizing an amorphous silicon film on a substrate comprising in sequence the steps of: (a) placing the substrate and amorphous silicon film into a vacuum chamber; (b) introducing an inert gas into the vacuum chamber to form an atmosphere consisting essentially of the inert gas within the vacuum chamber; and (c) genereating a glow discharge within the inert gas atmosphere in the vacuum chamber whereby the amorphous silicon is converted to a crystalline silicon film.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein the inert gas is selected from the group consisiting of argon, helium, neon and nitrogen.
Claim 4
Dependent Claim
29 words
A method according to claim 1, wherein the amorphous silicon film is partially covered by a mask, such that only the exposed portion of the silicon film is crystallized.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein the amorphous silicon film contains a dopant.
Claim 6
Dependent Claim
25 words
A method according to claim 1, wherein the amorphous silicon film is converted to a crystalline silicon film at a temperature of about 200° C.
Claim 7
Independent Claim
117 words
A method for forming a crystalline silicon film on a substrate comprising in sequence the steps of: (a) heating the substrate in a vacuum vessel; (b) introducing a reaction gas containing silicon hydride into the vacuum vessel; (c) generating a glow discharge within the vacuum vessel so that an amorphous silicon film is deposited on the substrate; (d) removing any residual reaction gas from the vacuum vessel; (e) introducing an inert gas into the vacuum vessel to form an atmosphere consisting essentially of the inert gas within the vacuum vessel; and (f) generating a glow discharge within the inert gas atmosphere in the vacuum vessel whereby the amorphous silicon film is converted to a crystalline silicon film.
Claim 8
Independent Claim
117 words
A method for forming a crystalline silicon film on a substrate comprising in sequence the steps of: (a) heating the substrate in a vacuum vessel; (b) introducing a reaction gas containing silicon hydride into the vacuum vessel; (c) generating a glow discharge within the vacuum vessel so that an amorphous silicon film is deposited on the substrate; (d) removing any residual reaction gas from the vacuum vessel; (e) introducing an inert gas into the vacuum vessel to form an atmosphere consisting essentially of the inert gas within the vacuum vessel; and (f) generating a glow discharge within the inert gas atmosphere in the vacuum vessel whereby the amorphous silicon film is converted to a crystalline silicon film.
Claim 9
Dependent Claim
22 words
A method according to claim 1, wherein the inert gas is selected from the group consisting of argon, helium, neon and nitrogen.
Claim 10
Dependent Claim
35 words
A method according to claim 1 additionally comprising placing a mask over a part of the amorphous silicon film prior to step f, so that only the exposed part of the silicon film is crystallized.
Claim 11
Dependent Claim
14 words
A method according to claim 1, wherein the amorphous silicon film contains a dopant.
Claim 12
Dependent Claim
25 words
A method according to claim 1, wherein the amorphous silicon film is converted to a crystalline silicon film at a temperature of about 200° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-09 | 1992-02-08 | 1992-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-09 | 1996-02-08 | 1996-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-09 | 2000-02-08 | 2000-08-09 | $7700.00 | Window Closed / Lapsed |