Patent US5534727A successfully refreshed from Google Patents.
US5534727A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1994-09-23
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Granted: 1996-07-09
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Expires: 2014-09-23
Abstract
Abstract A semiconductor device including an insulating film substrate having a surface, a high frequency semiconductor chip disposed on the surface, and circuit elements disposed on the surface and connected to the semiconductor chip wherein the insulating film substrate is bent into a U-shape, laminated, and encapsulated with a resin. The package of the device is miniaturized.
Inventors
- 👤 Akira Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:27
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/121; H10W42/00; H10W42/20; H10W44/00; H10W44/20; H10W44/501; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/67; H10W70/688; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0393; H05K2203/00; H05K2203/13; H05K2203/1305; H05K2203/1327; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
164 words
A semiconductor device comprising: a first insulating film substrate having a front surface and a rear surface; a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate; a second insulating film substrate having a front surface and a rear surface; a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin; and an electromagnetic shielding layer disposed on said second film substrate for electromagnetically separating said second film substrate from said first film substrate wherein said rear surface of said first film substrate is opposite one of said front and rear surfaces of said second film substrate and said high frequency semiconductor chip and circuit elements on said first and second film substrates are electrically connected to each other via through holes.
Claim 2
Dependent Claim
164 words
A semiconductor device comprising: a first insulating film substrate having a front surface and a rear surface; a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate; a second insulating film substrate having a front surface and a rear surface; a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin; and an electromagnetic shielding layer disposed on said second film substrate for electromagnetically separating said second film substrate from said first film substrate wherein said rear surface of said first film substrate is opposite one of said front and rear surfaces of said second film substrate and said high frequency semiconductor chip and circuit elements on said first and second film substrates are electrically connected to each other via through holes.
Claim 3
Dependent Claim
122 words
A semiconductor device comprising: a first insulating film substrate having a front surface and a rear surface; a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate; a second insulating film substrate having a front surface and a rear surface; and a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin wherein said first film substrate has a first hardness and said second film substrate has a second hardness and the first hardness is larger than the second hardness.
Claim 4
Dependent Claim
122 words
A semiconductor device comprising: a first insulating film substrate having a front surface and a rear surface; a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate; a second insulating film substrate having a front surface and a rear surface; and a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin wherein said first film substrate has a first hardness and said second film substrate has a second hardness and the first hardness is larger than the second hardness.
Claim 5
Dependent Claim
27 words
The semiconductor device of claim 2 wherein said semiconductor chip is covered with a material having a dielectric constant lower than the dielectric constant of said resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-09 | 2000-01-08 | 2000-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-09 | 2004-01-08 | 2004-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-09 | 2008-01-08 | 2008-07-09 | $7700.00 | Window Closed / Lapsed |