Semiconductor integrated circuit and method of manufacturing same

Claim 2

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having a top surface, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the second insulating layer being positioned on the first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, said inter-layer insulating film having a wiring layer-forming groove formed therein extending in the second insulating layer from the top surface of the inter-layer insulating film, the first insulating layer being made of a different insulating material than insulating material of which the second insulating layer is made; and a wiring layer formed in said wiring layer-forming groove and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 3

A semiconductor integrated circuit device according to claim 1, wherein said wiring layer-forming groove extends entirely through the second insulating layer.

Claim 4

A semiconductor integrated circuit device according to claim 1, wherein said wiring layer in said wiring layer-forming groove is a metal layer formed by a selective chemical vapor deposition.

Claim 5

A semiconductor integrated circuit device according to claim 3, wherein the metal of said metal layer formed by the selective chemical vapor deposition is tungsten.

Claim 6

A semiconductor integrated circuit device according to claim 4, wherein a base layer is provided on at least part of the interior of the wiring layer-forming groove, and wherein said base layer is a tungsten silicide film.

Claim 7

A semiconductor integrated circuit device according to claim 5, wherein said base layer is provided on sides of the wiring layer-forming groove.

Claim 8

A semiconductor integrated circuit device according to claim 6, wherein said third insulating layer has a film thickness greater than that of said silicon nitride film.

Claim 9

A semiconductor integrated circuit device according to claim 1, wherein the wiring layer-forming groove is a groove formed by etching a material of the second insulating layer using an etchant, the groove having a depth, and wherein the first insulating layer is made of a material etched by said etchant at a lower speed than the etching speed, by said etchant, of the material of the second insulating layer, whereby the depth of the wiring layer-forming groove can be defined by a depth of a bottom surface of the material of the second insulating film at a location of the wiring layer-forming film, said bottom surface being a surface of the material of the second insulating layer closest to the substrate.

Claim 10

A semiconductor integrated circuit device according to claim 8, wherein the wiring layer-forming groove extends entirely through the second insulating layer while substantially not extending into the first insulating layer, and wherein the depth of the wiring layer-forming groove is defined by a depth of the bottom surface of the material of the second insulating layer, at the location of a wiring layer-forming groove.

Claim 11

A semiconductor integrated circuit device according to claim 9, wherein the material of the first insulating layer is an etching stop material for etching of the material of the second insulating layer, using said etchant, in forming said wiring layer-forming groove.

Claim 12

A semiconductor integrated circuit device according to claim 8, comprising at least a further inter-layer insulating film, on the wiring layer and on the inter-layer insulating film, said further inter-layer insulating film having a top surface furthest from the substrate, said further inter-layer insulating including a further first insulating layer and a further second insulating layer, the further first insulating layer being closer to the substrate than the further second insulating layer and the further second insulating layer being on the further first insulating layer, with a further wiring layer-forming groove provided extending in the further inter-layer insulating film from the top surface of the further inter-layer insulating film into the further second insulating layer and a further wiring layer provided in said further wiring layer-forming groove, a top surface of the further wiring layer and the top surface of the further inter-layer insulating film being substantially in a same plane.

Claim 13

A semiconductor integrated circuit device according to claim 11, wherein the further wiring layer-forming groove does not extend completely through the further inter-layer insulating film, and further comprising a hole extending through the further inter-layer insulating film, with a further metal layer in the hole, so as to electrically connect the wiring layer and further wiring layer.

Claim 14

A semiconductor integrated circuit device according to claim 11, wherein the further wiring layer-forming groove is provided extending through the further second insulating layer and not through the further first insulating layer, the further wiring layer-forming groove being a groove formed by etching material of the further second insulating layer at a location of the further wiring layer-forming groove, with an etchant, and wherein material of the further first insulating layer is etched by said etchant at a lower speed than the etching speed, by said etchant, of the material of the further second insulating layer.

Claim 15

A semiconductor integrated circuit device according to claim 8, wherein said wiring layer-forming groove does not extend through the first insulating layer, and wherein the first insulating layer has a hole extending therethrough, and a metal layer is located in said hole for contact with said wiring layer.

Claim 16

A semiconductor integrated circuit device according to claim 14, wherein said metal layer in said hole is a tungsten layer, formed by selective chemical vapor deposition.

Claim 17

A semiconductor integrated circuit device according to claim 14, wherein said semiconductor substrate has semiconductor regions, of semiconductor elements of the semiconductor integrated circuit device, provided therein, and the hole extends so as to electrically connect the metal layer in the hole to a semiconductor region of a semiconductor element of the semiconductor integrated circuit device.

Claim 18

A semiconductor integrated circuit device according to claim 8, wherein a base film is provided on at least part of the interior of said wiring layer-forming groove to enhance adhesion between said wiring layer and said inter-layer insulating film.

Claim 19

A semiconductor integrated circuit device according to claim 17, wherein said base film is provided on side walls of the groove.

Claim 20

A semiconductor integrated circuit device according to claim 18, wherein the base film provided on side walls of the groove is made of tungsten silicide.

Claim 21

A semiconductor integrated circuit device according to claim 17, wherein said base film is provided on the bottom of the groove.

Claim 22

A semiconductor integrated circuit device according to claim 20, wherein the base film provided on the bottom of the groove is a polycrystalline silicon film.

Claim 23

A semiconductor integrated circuit device according to claim 21, wherein the inter-layer insulating film includes a silicon oxide film located at sides of the polycrystalline silicon film.

Claim 24

A semiconductor integrated circuit device according to claim 22, wherein said silicon oxide film located at sides of the polycrystalline silicon film is a silicon oxide film formed by thermal oxidation of portions of an initial polycrystalline silicon film, remaining portions of said initial polycrystalline silicon film constituting the polycrystalline silicon film of the base film.

Claim 25

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having a top surface, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the inter-layer insulating film further having a third insulating layer, the second insulating layer being positioned on the first insulating layer, and the third insulating layer being formed on the second insulating layer, the first insulating layer including a silicon oxide layer having a thickness of 0.5-15μ, the second insulating layer including a silicon nitride layer having a thickness of 500-1500 Å, and the third insulating layer including a silicon oxide layer having a thickness of 0.5-1μ, said inter-layer insulating film having a wiring layer-forming groove formed through the second and third insulating layers from the top surface of the inter-layer insulating film, the first insulating layer being made of a different insulating material than insulating material of which the second insulating layer is made; and a wiring layer formed in said wiring layer-forming groove and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 26

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having a top surface, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the inter-layer insulating film further having a third insulating layer, the second insulating layer being positioned on the first insulating layer, and the third insulating layer being formed on the second insulating layer, the first insulating layer including a silicon oxide layer having a thickness of 0.5-15μ, the second insulating layer including a silicon nitride layer having a thickness of 500-1500 Å, and the third insulating layer including a silicon oxide layer having a thickness of 0.5-1μ, said inter-layer insulating film having a wiring layer-forming groove formed through the second and third insulating layers from the top surface of the inter-layer insulating film, the first insulating layer being made of a different insulating material than insulating material of which the second insulating layer is made; and a wiring layer formed in said wiring layer-forming groove and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 27

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film which covers the surface of said semiconductor substrate, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, the inter-layer insulating film having a top surface, said inter-layer insulating film having a wiring layer-forming groove extending from the top surface of the inter-layer insulating film, the wiring layer-forming groove being a groove formed by etching using an etchant, with material of said first insulating layer being a material that is etched at a lower etching speed by said etchant than the etching speed, by said etchant, of material of said second insulating layer, whereby a depth of said wiring layer-forming groove is defined by a depth of said second insulating layer of said inter-layer insulating film; and a wiring layer in said wiring layer-forming groove, the wiring layer having a top surface furthest from the substrate, the top surface of said wiring layer and said top surface of said inter-layer insulating film being in substantially a same plane, said wiring layer being a layer formed by a selective chemical vapor deposition method.

Claim 28

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film which covers the surface of said semiconductor substrate, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, the inter-layer insulating film having a top surface, said inter-layer insulating film having a wiring layer-forming groove extending from the top surface of the inter-layer insulating film, the wiring layer-forming groove being a groove formed by etching using an etchant, with material of said first insulating layer being a material that is etched at a lower etching speed by said etchant than the etching speed, by said etchant, of material of said second insulating layer, whereby a depth of said wiring layer-forming groove is defined by a depth of said second insulating layer of said inter-layer insulating film; and a wiring layer in said wiring layer-forming groove, the wiring layer having a top surface furthest from the substrate, the top surface of said wiring layer and said top surface of said inter-layer insulating film being in substantially a same plane, said wiring layer being a layer formed by a selective chemical vapor deposition method.

Claim 29

A semiconductor integrated circuit device according to claim 25, wherein said wiring layer-forming groove extends through an entire thickness of the second insulating layer.

Claim 30

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having a top surface, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, said inter-layer insulating film having a wiring layer-forming groove formed therein extending entirely through the second insulating layer, said first insulating layer further including a boron-doped phosphosilicate glass film on the silicon oxide film, said second insulating layer including a further insulating film on said silicon nitride film; and a wiring layer formed in said wiring layer-forming groove, and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 31

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having a top surface, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, said inter-layer insulating film having a wiring layer-forming groove formed therein extending entirely through the second insulating layer, said first insulating layer further including a boron-doped phosphosilicate glass film on the silicon oxide film, said second insulating layer including a further insulating film on said silicon nitride film; and a wiring layer formed in said wiring layer-forming groove, and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 32

A semiconductor integrated circuit device according to claim 27, wherein said further insulating film has a film thickness greater than that of said silicon nitride film.

Claim 33

A semiconductor integrated circuit device according to claim 28, wherein said further insulating film includes a silicon oxide film.

Claim 34

A semiconductor integrated circuit device according claim 29, wherein a depth of said wiring layer-forming groove is defined by a film thickness of said second insulating layer.

Claim 35

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, said inter-layer insulating film having a wiring layer-forming groove formed therein extending entirely through the second insulating layer, said first insulating layer further including a phosphosilicate glass film on the silicon oxide film, said second insulating layer including a further insulating film on said silicon nitride film; and a wiring layer formed in said wiring layer-forming groove, and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 36

A semiconductor integrated circuit device comprising: a semiconductor substrate having a surface; an inter-layer insulating film covering the surface of said semiconductor substrate, said inter-layer insulating film having at least a first insulating layer and a second insulating layer, the first insulating layer being closer to said surface of the substrate than is the second insulating layer, the second insulating layer being positioned on said first insulating layer, the first insulating layer including a silicon oxide film and the second insulating layer including a silicon nitride film, the silicon nitride film having a thickness of 500-1500 Å and the silicon oxide film having a thickness of 0.5-15μ, said inter-layer insulating film having a wiring layer-forming groove formed therein extending entirely through the second insulating layer, said first insulating layer further including a phosphosilicate glass film on the silicon oxide film, said second insulating layer including a further insulating film on said silicon nitride film; and a wiring layer formed in said wiring layer-forming groove, and having a top surface furthest from the surface of the substrate, with the top surface of the wiring layer being in substantially a same plane as said top surface of said inter-layer insulating film.

Claim 37

A semiconductor integrated circuit device according to claim 31, wherein said further insulating film has a film thickness greater than that of said silicon nitride film.

Claim 38

A semiconductor integrated circuit device according to claim 32, wherein said further insulating film includes a silicon oxide film.

Claim 39

A semiconductor integrated circuit device according to claim 33, wherein a depth of said wiring layer-forming groove is defined by a film thickness of said second insulating layer.