US4283439A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
Assignee: Toshiba Corp
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Filing: 1980-04-29
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Granted: 1981-08-11
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Expires: 2000-04-29
Abstract
Abstract A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.
Inventors
- 👤 Iwao Higashinakagawa
- 👤 Syohei Sima
- 👤 Takahiko Moriya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:53
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S148/00; Y10S148/015; Y10S148/018; Y10S148/02; Y10S148/147
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method of making a semiconductor device comprising the steps of: forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten on an insulating film formed on a semiconductor substrate; forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas; forming a silicon oxide film on the silicon nitride film; selectively etching the silicon oxide film and the silicon nitride film to form a contact hole; and forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
Claim 2
Independent Claim
103 words
A method of making a semiconductor device comprising the steps of: forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten on an insulating film formed on a semiconductor substrate; forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas; forming a silicon oxide film on the silicon nitride film; selectively etching the silicon oxide film and the silicon nitride film to form a contact hole; and forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
Claim 3
Independent Claim
110 words
A method of making a semiconductor device comprising of the steps of: forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten by sputtering or chemical vapor deposition on an insulating film formed on a semiconductor substrate; forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas; forming a silicon oxide film on the silicon nitride film; selectively etching the silicon oxide film and the silicon nitride film to form a contact hole; and forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
Claim 4
Independent Claim
110 words
A method of making a semiconductor device comprising of the steps of: forming an interconnection electrode comprising a silicide of a refractory metal selected from the group consisting of molybdenum and tungsten by sputtering or chemical vapor deposition on an insulating film formed on a semiconductor substrate; forming a silicon nitride film on the interconnection electrode in an atmosphere containing ammonia gas and silane gas; forming a silicon oxide film on the silicon nitride film; selectively etching the silicon oxide film and the silicon nitride film to form a contact hole; and forming a metal electrode layer on the silicon oxide film and the interconnection electrode through said contact hole.
Claim 5
Dependent Claim
25 words
A method according to claim 1 or 2, wherein said step of forming a silicon nitride film is carried out by the plasma CVD method.
Claim 6
Dependent Claim
30 words
A method according to claim 3, wherein the plasma CVD method is carried out at 200° to 350° C. in an atmosphere consisting of ammonia, silane and an inert gas.
Claim 7
Dependent Claim
18 words
A method according to claim 4, wherein said silicon nitride film is formed 500 to 2000 A thick.
Claim 8
Dependent Claim
16 words
A method according to claim 1 or 2, wherein said semiconductor device is a bipolar transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-10 | 1985-02-09 | 1985-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-10 | 1989-02-09 | 1989-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-10 | 1993-02-09 | 1993-08-11 | $7700.00 | Window Closed / Lapsed |