Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications

Claim 2

A process for the processing of thin films on semiconductor substrates using two or more liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure and then introducing the resulting vapor into a manifold also connected to a processing chamber, with the point of introduction of said vaporized first liquid precursor source into said manifold being spaced away from said processing chamber; and c) vaporizing a second liquid precursor source, having a vapor pressure lower than said first liquid precursor source, and then introducing the resulting vapor into said manifold at a point of introduction of said vaporized second liquid precursor source closer to said processing chamber than said point of introduction of said vaporized first liquid precursor source; whereby, each subsequent downstream liquid precursor source has a lower vapor pressure than all preceding liquid precursor sources.

Claim 3

The process of claim 1 wherein one or more further liquid precursor sources, each having a vapor pressure lower than the respective vapor pressures of said first and second liquid precursor sources, is vaporized and the resulting vapor is introduced into said manifold at a point closer to said processing chamber than the next higher vapor pressure liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced as a vapor into said manifold at a point closer to said processing chamber than the previous liquid precursor source.

Claim 4

The process of claim 1 wherein a carrier gas is flowed into said manifold at a point prior to the introduction into said manifold of said vapor of said first liquid precursor source.

Claim 5

A process for the processing of thin films on semiconductor substrates using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said plurality of liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure of said plurality of liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into a manifold at a point of introduction upstream of a processing chamber also connected to said manifold; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; and d) vaporizing a third liquid precursor source, having a vapor pressure lower than said respective vapor pressures of said first and second liquid precursor sources, and then introducing the resulting vapor from said third liquid precursor source into said manifold at a point of introduction of said vaporized third liquid precursor source upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; whereby premature boiling of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources will be mitigated.

Claim 6

A process for the processing of thin films on semiconductor substrates using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said plurality of liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure of said plurality of liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into a manifold at a point of introduction upstream of a processing chamber also connected to said manifold; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; and d) vaporizing a third liquid precursor source, having a vapor pressure lower than said respective vapor pressures of said first and second liquid precursor sources, and then introducing the resulting vapor from said third liquid precursor source into said manifold at a point of introduction of said vaporized third liquid precursor source upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; whereby premature boiling of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources will be mitigated.

Claim 7

The process of claim 4 wherein a carrier gas is flowed into said manifold upstream of said point of introduction into said manifold of said vapor of said first liquid precursor source.

Claim 8

The process of claim 5 wherein one of said plurality of liquid precursor sources comprises a liquid source of a boron dopant used in forming a boron doped thin film on said semiconductor substrate.

Claim 9

The process of claim 5 wherein one of said plurality of liquid precursor sources comprises a liquid source of a phosphorus dopant used in forming a phosphorus doped thin film on said semiconductor substrate.

Claim 10

The process of claim 5 wherein one of said plurality of liquid precursor sources comprises a liquid source of silicon used in forming a silicon oxide film on said semiconductor substrate.

Claim 11

A process for the formation of a thin film of doped silicon oxide on a semiconductor substrate in a processing chamber using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of a liquid precursor source of silicon and one or more liquid precursor sources of dopant at a common temperature; b) flowing a carrier gas into a manifold at a point of introduction upstream of said processing chamber also connected to said manifold; c) vaporizing a first of said liquid precursor sources with the highest vapor pressure of said liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into said manifold at a point downstream from said point of entry of said carrier gas, but upstream of said processing chamber; d) vaporizing a second of said liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; and d) flowing a gaseous source of oxygen into said manifold at a point upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; to thereby form a doped film of silicon oxide on said substrate while mitigating premature boiling or decomposition of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources.

Claim 12

A process for the formation of a thin film of doped silicon oxide on a semiconductor substrate in a processing chamber using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of a liquid precursor source of silicon and one or more liquid precursor sources of dopant at a common temperature; b) flowing a carrier gas into a manifold at a point of introduction upstream of said processing chamber also connected to said manifold; c) vaporizing a first of said liquid precursor sources with the highest vapor pressure of said liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into said manifold at a point downstream from said point of entry of said carrier gas, but upstream of said processing chamber; d) vaporizing a second of said liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; and d) flowing a gaseous source of oxygen into said manifold at a point upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; to thereby form a doped film of silicon oxide on said substrate while mitigating premature boiling or decomposition of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources.

Claim 13

The process of claim 9 wherein said one or more of liquid precursor sources of dopant is selected from the group consisting of a liquid precursor source of boron, a liquid precursor source of phosphorus, and liquid precursor sources of both boron and phosphorus.

Claim 14

The process of claim 9 wherein said liquid precursor source of silicon comprises TEOS.

Claim 15

The process of claim 9 wherein said liquid precursor source of silicon comprises TEOS and said one or more of liquid precursor sources of dopant is selected from the group consisting of a liquid precursor source of boron, a liquid precursor source of phosphorus, and liquid precursor sources of both boron and phosphorus.

Claim 16

A process for the processing of thin films on semiconductor substrates using two or more liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure and then introducing the resulting vapor into a manifold also connected to a processing chamber, with the point of introduction of said vaporized first liquid precursor source into said manifold being spaced away from said processing chamber; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said first liquid precursor source, and then introducing the resulting vapor into said manifold at a point of introduction of said vaporized second liquid precursor source closer to said processing chamber than said point of introduction of said vaporized first liquid precursor source; and d) maintaining a temperature gradient along said manifold with the temperature gradually increased in a direction toward said processing chamber; whereby, each subsequent downstream liquid precursor source has a lower vapor pressure than all preceding liquid precursor sources.

Claim 17

A process for the processing of thin films on semiconductor substrates using two or more liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure and then introducing the resulting vapor into a manifold also connected to a processing chamber, with the point of introduction of said vaporized first liquid precursor source into said manifold being spaced away from said processing chamber; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said first liquid precursor source, and then introducing the resulting vapor into said manifold at a point of introduction of said vaporized second liquid precursor source closer to said processing chamber than said point of introduction of said vaporized first liquid precursor source; and d) maintaining a temperature gradient along said manifold with the temperature gradually increased in a direction toward said processing chamber; whereby, each subsequent downstream liquid precursor source has a lower vapor pressure than all preceding liquid precursor sources.

Claim 18

The process of claim 13 wherein one or more further liquid precursor sources, each having a vapor pressure lower than the respective vapor pressures of said first and second liquid precursor sources, is vaporized and the resulting vapor is introduced into said manifold at a point closer to said processing chamber than the next higher vapor pressure liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced as a vapor into said manifold at a point closer to said processing chamber than the previous liquid precursor source.

Claim 19

The process of claim 13 wherein a carrier gas is flowed into said manifold at a point upstream of said point of introduction into said manifold of said vapor of said first liquid precursor source.

Claim 20

The process of claim 13 which further includes heating each liquid source as it is vaporized and introduced into said manifold.

Claim 21

The process of claim 13 which further including heating said manifold at one or more positions intermediate the respective introduction points of said vaporized liquid sources into said manifold.

Claim 22

A process for the processing of thin films on semiconductor substrates using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said plurality of liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure of said plurality of liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into a manifold at a point of introduction upstream of a processing chamber also connected to said manifold; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; d) vaporizing a third liquid precursor source, having a vapor pressure lower than said respective vapor pressures of said first and second liquid precursor sources, and then introducing the resulting vapor from said third liquid precursor source into said manifold at a point of introduction of said vaporized third liquid precursor source upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; and e) maintaining a temperature gradient along said manifold with the temperature gradually increased in a direction toward said processing chamber; whereby premature boiling of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources will be mitigated because each subsequent downstream liquid precursor source has a lower vapor pressure than all preceding liquid precursor sources.

Claim 23

A process for the processing of thin films on semiconductor substrates using a plurality of liquid precursor sources which comprises: a) determining the relative vapor pressures of each of said plurality of liquid precursors at a common temperature; b) vaporizing a first liquid precursor source with the highest vapor pressure of said plurality of liquid precursor sources, and then introducing the resulting vapor from said first liquid precursor source into a manifold at a point of introduction upstream of a processing chamber also connected to said manifold; c) vaporizing a second liquid precursor source, having a vapor pressure lower than said vapor pressure of said first liquid precursor source, and then introducing the resulting vapor from said second liquid precursor source into said manifold at a point of introduction of said vaporized second liquid precursor source upstream of said processing chamber, but downstream of said point of introduction of said vaporized first liquid precursor source into said manifold; d) vaporizing a third liquid precursor source, having a vapor pressure lower than said respective vapor pressures of said first and second liquid precursor sources, and then introducing the resulting vapor from said third liquid precursor source into said manifold at a point of introduction of said vaporized third liquid precursor source upstream of said processing chamber, but downstream of said respective points of introduction of said vaporized first and second liquid precursor sources into said manifold; and e) maintaining a temperature gradient along said manifold with the temperature gradually increased in a direction toward said processing chamber; whereby premature boiling of said liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources will be mitigated because each subsequent downstream liquid precursor source has a lower vapor pressure than all preceding liquid precursor sources.

Claim 24

The process of claim 18 wherein a carrier gas is flowed into said manifold upstream of said point of introduction into said manifold of said vapor of said first liquid precursor source.

Claim 25

The process of claim 19 wherein one of said plurality of liquid precursor sources comprises a liquid source of a boron dopant used in forming a boron doped thin film on said semiconductor substrate.

Claim 26

The process of claim 19 wherein one of said plurality of liquid precursor sources comprises a liquid source of a phosphorus dopant used in forming a phosphorus doped thin film on said semiconductor substrate.

Claim 27

The process of claim 19 wherein one of said plurality of liquid precursor sources comprises a liquid source of silicon used in forming a silicon oxide film on said semiconductor substrate.

Claim 28

The process of claim 18 which further includes heating each liquid source as it is vaporized and introduced into said manifold.

Claim 29

The process of claim 18 which further including heating said manifold at one or more positions intermediate the respective introduction points of said vaporized liquid sources into said manifold.