Abstract Herein disclosed is a vapor growth system, in which the number of dummy lines is reduced to decrease the number of lines led into a valve system, thereby enabling thin film growth having a good interfacial steepleness. The system comprising gas supplying lines A70, B71 and C72, which are made up of AsH 3 process gas lines A62, B65, C68 and and balance lines A61, B64 and C67, respectively. The balance lines A61, B64 and C 67 contributes equalization of products of the viscosity and the flow rate in the gas supplying lines A70, B71 and C72, and the dummy line 60. Only when AsH 3 (A), AsH 3 (B) and AsH 3 gases are not fed upon formation of the film growth, the dummy line 60 is connected to the main line. Whereby, the system is free from pressure fluctuation of the gas in the main line, with an arrangement of even a single dummy line.
A vapor growth method comprising the steps of: adjusting a flow rate in a balance line to equalize products of the viscosity and the flow rate of a gas in a dummy line and gases in gas supplying lines; supplying a process gas required for vapor growth in a gas supplying line to a main line; and supplying a gas from the dummy line to the main line only when the process gas is not supplied from the process gas line to the main line.
Claim 2
Dependent Claim
85 words
A vapor growth method comprising the steps of: adjusting a flow rate in a balance line to equalize products of the viscosity and the flow rate of a gas in a dummy line and gases in gas supplying lines; supplying a process gas required for vapor growth in a gas supplying line to a main line; and supplying a gas from the dummy line to the main line only when the process gas is not supplied from the process gas line to the main line.