Analog switch formed of thin film transistor and having reduced leakage current

Claim 2

An analog switch comprising at least first and second thin film field effect transistors each having a gate electrode directly connected in common to a control terminal, source-drain paths of said at least first and second thin film field effect transistors being directly connected in series to each other between an input terminal and a capacitive load, and a voltage adjusting capacitive element directly connected to a common connection between said source-drain current paths of said at least first and second thin film field effect transistors.

Claim 3

An analog switch claimed in claim 1 wherein at least one of said at least first and second thin film field effect transistors is an offset gate type MIS transistor.

Claim 4

An analog switch claimed in claim 1 further including a feedthrough adjustment capacitive element connected between said gate electrode of said second thin film field effect transistor and said capacitive load, which is connected to said source-drain path of said second thin film field effect transistor.

Claim 5

An analog switch claimed in claim 1 further including a third thin film transistor having its gate connected to said control terminal and its current path connected at its one end to said input terminal and at its other end connected in series to the series-connected current paths of said at least first and second thin film field effect transistors, and another voltage adjusting capacitive element connected to the other end of the current path of said third thin film field effect transistor.

Claim 6

An analog switch comprising: at least first and second thin film field effect transistors each having a gate electrode connected in common to a control terminal, source-drain current paths of said at least first and second thin film field effect transistors being connected in series to each other between an input terminal and a capacitive load; and a voltage adjusting capacitive element connected to a common connection between said source-drain current paths of said at least first and second thin film field effect transistors; wherein each of said at least first and second thin film field effect transistors has a common semiconductor thin film formed on an insulating substrate, wherein said gate electrode of each of said at least first and second thin film field effect transistors is formed on a gate insulator film on said semiconductor thin film, and wherein each of said capacitive load and said capacitive element has one electrode which is formed on said insulating substrate so as to interpose and interlayer insulating film and a conductive film between the one electrode and said insulating substrate.

Claim 7

An analog switch comprising: at least first and second thin film field effect transistors each having a gate electrode connected in common to a control terminal, source-drain current paths of said at least first and second thin film field effect transistors being connected in series to each other between an input terminal and a capacitive load; and a voltage adjusting capacitive element connected to a common connection between said source-drain current paths of said at least first and second thin film field effect transistors; wherein each of said at least first and second thin film field effect transistors has a common semiconductor thin film formed on an insulating substrate, wherein said gate electrode of each of said at least first and second thin film field effect transistors is formed on a gate insulator film on said semiconductor thin film, and wherein each of said capacitive load and said capacitive element has one electrode which is formed on said insulating substrate so as to interpose and interlayer insulating film and a conductive film between the one electrode and said insulating substrate.