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US3922567A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated IGFET bucket-brigade circuit

Assignee: TDK Micronas GmbH
•
Filing: 1974-04-08
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Granted: 1975-11-25
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Expires: 1994-04-08
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Abstract

Abstract An IGFET bucket-brigade device comprises a row of IGFETs of the depletion-layer type. The last IGFET of the row comprises a drain region provided with an electrical terminal to which a voltage is fed greater than the pinch-off-voltage and of a polarity opposite to the polarity of the clock impulse.

Inventors

  • 👤 Fritz G Adam
  • 👤 Cornelius Obermeier
  • 👤 Gerhard Scheffer
  • 👤 Klaus Wilmsmeyer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 19:13
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/891; H10D84/895; G; G11; G11C; G11C19/00; G11C19/18; G11C19/182; G11C19/184; G11C19/186; G11C27/00; G11C27/04

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 184 words
An integrated bucket-brigade circuit wherein there is provided a plurality of stages each containing a transistor and a capacitor coupled between the gate and drain electrode thereof, and coupled together such that the drain electrode of each transistor is connected to the source electrode of the next successive transistor, and wherein a first clock signal is coupled to the gate terminals of even-numbered transistors and the complement of said first square wave clock signal controls the gate terminals of the odd-numbered transistors, comprising: a source of operating voltage; first and second sources of clock pulses, said first source coupled to said even-numbered transistors and said second source coupled to said odd-numbered transistors; and a row of field-effect transistors of the depletion-layer type having source and drain regions, said field-effect transistors employing gate electrodes on an insulated-gate layer, wherein the last transistor in said row is provided with an electrical terminal to which said source of operating voltage is coupled, said operating voltage having polarity opposite to the polarity of said clock pulses and having magnitude greater than the pinch-off voltage of said last transistor.
Claim 2
Dependent Claim 184 words
An integrated bucket-brigade circuit wherein there is provided a plurality of stages each containing a transistor and a capacitor coupled between the gate and drain electrode thereof, and coupled together such that the drain electrode of each transistor is connected to the source electrode of the next successive transistor, and wherein a first clock signal is coupled to the gate terminals of even-numbered transistors and the complement of said first square wave clock signal controls the gate terminals of the odd-numbered transistors, comprising: a source of operating voltage; first and second sources of clock pulses, said first source coupled to said even-numbered transistors and said second source coupled to said odd-numbered transistors; and a row of field-effect transistors of the depletion-layer type having source and drain regions, said field-effect transistors employing gate electrodes on an insulated-gate layer, wherein the last transistor in said row is provided with an electrical terminal to which said source of operating voltage is coupled, said operating voltage having polarity opposite to the polarity of said clock pulses and having magnitude greater than the pinch-off voltage of said last transistor.
Claim 3
Dependent Claim 15 words
An integrated bucket-brigade circuit according to claim 1 wherein said field-effect transistors are n-channel devices.
Claim 4
Dependent Claim 18 words
An integrated bucket-brigade circuit according to claim 2 wherein said insulated-gate layer consists in part of an oxide.
Claim 5
Dependent Claim 26 words
An integrated bucket-brigade circuit according to claim 2 wherein said channel regions contain doping impurities of the same conductivity type as said source and drain regions.
Claim 6
Dependent Claim 15 words
An integrated bucket-brigade circuit according to claim 4 wherein said gate electrodes are polycrystalline silicon.
Claim 7
Dependent Claim 22 words
An integrated bucket-brigade circuit according to claim 5 wherein the spacing between adjacent gate electrodes equals the thickness of said insulated-gate layer.

References Cited (Backward Citations)

US3745383A Cited
US3784847A Cited
US3790825A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-11-24 1979-05-26 1979-11-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-11-24 1983-05-26 1983-11-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-11-24 1987-05-26 1987-11-25 $7700.00 Window Closed / Lapsed

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