US5516719A
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US
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Method for the fabrication of a capacitor in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-05-23
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Granted: 1996-05-14
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Expires: 2014-05-23
Abstract
Abstract There is disclosed a method for the fabrication of capacitor, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film, to form a contact hole exposing an active region of the transistor therethrough and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and a plurality of second spacer oxide films on the polysilicon film, in due order; carrying out etch, so as to attenuate the conductive polysilicon films; etching the conductive polysilicon film by use of the plurality of spacer oxide films as an etch mask, to form a charge storage electrode, the charge storage electrode being determined by the attenuation of the conductive polysilicon in size; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film. There can be realized an increase in the effective area of the charge storage electrode compared to the area of the mask for the charge storage electrode. In addition, the increase in capacitance of the charge storage electrode, in turn, results in an improvement in device reliability.
Inventors
- 👤 Eui K. Ryou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:22
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10B12/30; H10B12/31; H10B12/318; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; Y; Y10; Y10S; Y10S148/00; Y10S148/014
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
171 words
A method for fabricating a capacitor in a semiconductor device, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film to form a contact hole exposing an active region of the transistor therethrough, and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and thereafter forming a plurality of second spacer oxide films on the conductive polysilicon film; subjecting the conductive polysilicon film to etch, so as to attenuate it in part; etching the conductive polysilicon film by concurrent use of the plurality of first and second spacer oxide films as an etch mask to form a charge storage electrode, said charge storage electrode being determined by the attenuation of the conductive polysilicon in size; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film.
Claim 2
Independent Claim
171 words
A method for fabricating a capacitor in a semiconductor device, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film to form a contact hole exposing an active region of the transistor therethrough, and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and thereafter forming a plurality of second spacer oxide films on the conductive polysilicon film; subjecting the conductive polysilicon film to etch, so as to attenuate it in part; etching the conductive polysilicon film by concurrent use of the plurality of first and second spacer oxide films as an etch mask to form a charge storage electrode, said charge storage electrode being determined by the attenuation of the conductive polysilicon in size; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film.
Claim 3
Dependent Claim
52 words
A method for fabricating a capacitor according to claim 1, wherein said step of forming a plurality of the first spacer oxide films further comprises: developing a photosensitive film pattern on the conductive polysilicon film; depositing an oxide film over the photosensitive film pattern; and applying anisotropic etch to the oxide film.
Claim 4
Dependent Claim
23 words
A method for fabricating a capacitor according to claim 1, wherein said insulating film is multilayer structure consisting of at least one film.
Claim 5
Dependent Claim
45 words
A method for fabricating a capacitor according to claim 3, wherein said insulating film of said multilayer structure comprises an oxide film and a silicon nitride film, said silicon nitride film overlaying said oxide film and serving as an etch barrier for said oxide film.
Claim 6
Dependent Claim
52 words
A method for fabricating a capacitor according to claim 1, wherein said step of etching the conductive polysilicon film to form a charge storage electrode further comprises the step of etching said insulating film formed under said conductive polysilicon film, so as to enlarge the surface area of said charge storage electrode.
Claim 7
Dependent Claim
29 words
A method for fabricating a capacitor according to claim 1, wherein said dielectric film is composite film selected from the group consisting of a nitride-oxide film and an oxide-nitride-oxide.
Claim 8
Dependent Claim
61 words
A method for fabricating a capacitor according to claim 1, wherein said step of forming a plurality of first and second spacer oxide films further comprises: developing a photosensitive film pattern on the conductive polysilicon film and said plurality of first spacer oxide films; depositing an oxide film over the photosensitive film pattern; and applying anisotropic etch to the oxide film.
Claim 9
Independent Claim
154 words
A method for fabricating a capacitor in a semiconductor device, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film to form a contact hole exposing an active region of the transistor therethrough, and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and thereafter forming a plurality of second spacer oxide films on the conductive polysilicon film; etching the conductive polysilicon film by use of the plurality of first and second spacer oxide films as an etch mask to form a charge storage electrode comprising a plurality of vertical storage electrode portions having uniform vertical height dimensions; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film.
Claim 10
Independent Claim
154 words
A method for fabricating a capacitor in a semiconductor device, comprising the steps of: coating an insulating film over a transistor and applying planarization to the insulating film; etching the insulating film to form a contact hole exposing an active region of the transistor therethrough, and forming a conductive polysilicon film over the insulating film, so as to bring the conductive polysilicon film into contact with the active region; forming a plurality of first spacer oxide films and thereafter forming a plurality of second spacer oxide films on the conductive polysilicon film; etching the conductive polysilicon film by use of the plurality of first and second spacer oxide films as an etch mask to form a charge storage electrode comprising a plurality of vertical storage electrode portions having uniform vertical height dimensions; and coating the surface of the charge storage electrode with a dielectric film, and forming a plate electrode on the dielectric film.
Claim 11
Dependent Claim
84 words
A method for fabricating a capacitor according to claim 8, wherein said step of forming the plurality of first and second spacer oxide films further comprises: developing a photosensitive film pattern on the conductive polysilicon film associated with each of said plurality of first and second spacer oxide films; depositing an oxide film associated with each of said plurality of first and second spacer oxide films; and etching the oxide film associated with each of said plurality of first and second spacer oxide films.
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