Method for manufacturing a semiconductor device with villus-type capacitor

Abstract

Abstract A method for manufacturing a villus-type capacitor of a semiconductor memory device formed by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate further comprising the steps of forming a first conductive layer by depositing a conductive material on the semiconductor substrate; covering the first conductive layer with a second material having grains of a first material; selectively removing the second material using the grains of the first material as a mask; etching a predetermined portion of the first conductive layer using a grain pattern formed by removing the second material as a mask; removing the grain pattern; completing the formation of a storage electrode by defining into each unit cell the villus-formed first conductive layers on the surface of the device utillizing an etching process; forming the dielectric film over the surface of the storage electrode; and forming the plate electrode by depositing a second conductive layer over the dielectric film. The pillar-shaped storage electrode having dimensions below design rules and a buried bit line extend the capacitor's surface, resulting in an effective increase of capacitive area, and a corresponding increase in the cell capacitance.

Inventors

• 👤 Ji-hong Ahn

Bibliographic Details