Abstract A method for manufacturing a villus-type capacitor of a semiconductor memory device formed by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate further comprising the steps of forming a first conductive layer by depositing a conductive material on the semiconductor substrate; covering the first conductive layer with a second material having grains of a first material; selectively removing the second material using the grains of the first material as a mask; etching a predetermined portion of the first conductive layer using a grain pattern formed by removing the second material as a mask; removing the grain pattern; completing the formation of a storage electrode by defining into each unit cell the villus-formed first conductive layers on the surface of the device utillizing an etching process; forming the dielectric film over the surface of the storage electrode; and forming the plate electrode by depositing a second conductive layer over the dielectric film. The pillar-shaped storage electrode having dimensions below design rules and a buried bit line extend the capacitor's surface, resulting in an effective increase of capacitive area, and a corresponding increase in the cell capacitance.
A method for manufacturing a semiconductor memory device with a capacitor by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate, said method further comprising the steps of: forming a first conductive layer by depositing a conductive material on said semiconductor substrate; covering the first conductive layer with a glass material which includes grains of an oxide; selectively removing said glass material using said oxide material grains as a mask; etching said first conductive layer using a grain pattern formed by removing said glass material as a mask; removing said grain pattern; completing the formation of a storage electrode by defining said first conductive layers formed as villi on the surface of the resultant structure into each unit cell utilizing an etching process; forming said dielectric film over the surface of said storage electrode; and forming said plate electrode by depositing a second conductive layer over said dielectric film.
Claim 2
Independent Claim
155 words
A method for manufacturing a semiconductor memory device with a capacitor by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate, said method further comprising the steps of: forming a first conductive layer by depositing a conductive material on said semiconductor substrate; covering the first conductive layer with a glass material which includes grains of an oxide; selectively removing said glass material using said oxide material grains as a mask; etching said first conductive layer using a grain pattern formed by removing said glass material as a mask; removing said grain pattern; completing the formation of a storage electrode by defining said first conductive layers formed as villi on the surface of the resultant structure into each unit cell utilizing an etching process; forming said dielectric film over the surface of said storage electrode; and forming said plate electrode by depositing a second conductive layer over said dielectric film.
Claim 3
Dependent Claim
35 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 1, wherein said oxide is either one of the group consisting of SiO 2 and Al 2 O 3 .
Claim 4
Dependent Claim
25 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 1, wherein said glass is an SOG (Spin On Glass).
Claim 5
Dependent Claim
30 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 1, wherein said capacitor is utilized as a cell capacitor of a highly integrated DRAM.
Claim 6
Dependent Claim
29 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 4, wherein said oxide grains have a diameter of about 0.05 to 0.1 μm.
Claim 7
Dependent Claim
25 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 4, wherein said conductive material is an impurity-doped polycrystalline silicon.
Claim 8
Dependent Claim
32 words
A method for manufacturing a semiconductor memory device with a capacitor as claimed in claim 4, wherein said storage electrodes defined into each unit cell, comprise about 5 to 25 pillar-shaped electrodes.